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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120267598A1

    公开(公告)日：2012-10-25

    申请号：US13499956

    申请日：2010-10-04

    申请人： Yukihiro Sakotsubo ,  Masayuki Terai ,  Munehiro Tada ,  Yuko Yabe ,  Yukishige Saito

    发明人： Yukihiro Sakotsubo ,  Masayuki Terai ,  Munehiro Tada ,  Yuko Yabe ,  Yukishige Saito

    IPC分类号： H01L47/00 ,  H01L21/02

    CPC分类号： H01L21/02186 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/02266 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608

    摘要： A semiconductor device includes at least first and second electrodes, and a layer including a transition metal oxide layer sandwiched between the first and second electrodes. The transition metal oxide layer includes first and second transition metal oxide layers formed of different first and second transition metals, respectively. The first transition metal oxide layer is provided on the first electrode side, the second transition metal oxide layer is provided on the second electrode side, the first transition metal oxide layer and the second transition metal oxide layer are in contact with each other, the first transition metal oxide layer has an oxygen concentration gradient from the interface between the first transition metal oxide layer and the second transition metal oxide layer toward the first electrode side, and the oxygen concentration at the interface is greater than the oxygen concentration on the first electrode side.

    摘要翻译： 半导体器件至少包括第一和第二电极，以及包括夹在第一和第二电极之间的过渡金属氧化物层的层。 过渡金属氧化物层分别包括由不同的第一和第二过渡金属形成的第一和第二过渡金属氧化物层。 第一过渡金属氧化物层设置在第一电极侧，第二过渡金属氧化物层设置在第二电极侧，第一过渡金属氧化物层和第二过渡金属氧化物层彼此接触，第一过渡金属氧化物层 过渡金属氧化物层具有从第一过渡金属氧化物层和第二过渡金属氧化物层之间的界面朝向第一电极侧的氧浓度梯度，并且界面处的氧浓度大于第一电极侧的氧浓度 。

    Semiconductor device with variable resistance element and method for manufacturing the same
    2.
    发明授权
    Semiconductor device with variable resistance element and method for manufacturing the same 有权
    具有可变电阻元件的半导体器件及其制造方法

    公开(公告)号：US08766233B2

    公开(公告)日：2014-07-01

    申请号：US13499956

    申请日：2010-10-04

    申请人： Yukihiro Sakotsubo ,  Masayuki Terai ,  Munehiro Tada ,  Yuko Yabe ,  Yukishige Saito

    发明人： Yukihiro Sakotsubo ,  Masayuki Terai ,  Munehiro Tada ,  Yuko Yabe ,  Yukishige Saito

    IPC分类号： H01L47/00

    CPC分类号： H01L21/02186 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/02266 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608

    摘要： A semiconductor device includes at least first and second electrodes, and a layer including a transition metal oxide layer sandwiched between the first and second electrodes. The transition metal oxide layer includes first and second transition metal oxide layers formed of different first and second transition metals, respectively. The first transition metal oxide layer is provided on the first electrode side, the second transition metal oxide layer is provided on the second electrode side, the first transition metal oxide layer and the second transition metal oxide layer are in contact with each other, the first transition metal oxide layer has an oxygen concentration gradient from the interface between the first transition metal oxide layer and the second transition metal oxide layer toward the first electrode side, and the oxygen concentration at the interface is greater than the oxygen concentration on the first electrode side.

    摘要翻译： 半导体器件至少包括第一和第二电极，以及包括夹在第一和第二电极之间的过渡金属氧化物层的层。 过渡金属氧化物层分别包括由不同的第一和第二过渡金属形成的第一和第二过渡金属氧化物层。 第一过渡金属氧化物层设置在第一电极侧，第二过渡金属氧化物层设置在第二电极侧，第一过渡金属氧化物层和第二过渡金属氧化物层彼此接触，第一过渡金属氧化物层 过渡金属氧化物层具有从第一过渡金属氧化物层和第二过渡金属氧化物层之间的界面朝向第一电极侧的氧浓度梯度，并且界面处的氧浓度大于第一电极侧的氧浓度 。

    Semiconductor device and operation method for same
    5.
    发明授权
    Semiconductor device and operation method for same 有权
    半导体器件及其操作方法相同

    公开(公告)号：US09059082B2

    公开(公告)日：2015-06-16

    申请号：US13704225

    申请日：2011-06-09

    申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    IPC分类号： H01L29/06 ,  H01L27/24 ,  G11C13/00 ,  H01L27/10 ,  H01L45/00

    CPC分类号： H01L27/2436 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/146

    摘要： A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein (a) the first electrode of the first switching element and the first electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected each other or (b) the second electrode of the first switching element and the second electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected each other.

    摘要翻译： 半导体器件包括第一开关元件，第二开关元件和至少一个第三开关元件; 其中所述第三开关元件包括第一端子和第二端子，其中所述第一开关元件和所述第二开关元件中的每一个包括离子导体，所述第一电极被设置为与所述离子导体接触并提供金属离子 以及第二电极，其设置成与离子导体接触并且比第一电极不易电离; 并且其中（a）第一开关元件的第一电极和第二开关元件的第一电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第一电极 另一个或（b）第一开关元件的第二电极和第二开关元件的第二电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第二电极 其他。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130181180A1

    公开(公告)日：2013-07-18

    申请号：US13824098

    申请日：2011-09-20

    申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    IPC分类号： H01L45/00

    CPC分类号： H01L45/04 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/73 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146

    摘要： A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.

    摘要翻译： 根据本发明的半导体器件包括：单元，其包括第一开关和第二开关，其中第一开关和第二开关中的每一个包括电阻变化层，其电阻状态根据极性而改变 并且第一开关和第二开关中的每一个具有两个电极，并且其中第一开关的一个电极和第二开关的一个电极彼此连接以形成公共节点，而另一个电极 第一开关构成第一节点，第二开关的另一个电极形成第二节点; 第一布线，与第一节点连接并形成信号传输线; 以及与第二节点连接并且通过单元元件与第一布线连接的第二布线。