摘要:
An apparatus for selectively inserting into the shed of a weaving loom a plurality of weft yarns having different natures, particularly colors, comprising cam means including at least one cam which is formed with lobe and bottom portions alternately arranged about the axis of rotation of the cam and which is driven to turn about the axis through a predetermined angle under the control of weft selector signal supply means such as a pattern card arrangement, wherein cam retaining means is provided to hold the cam in one of the angular positions operative to have each of the weft shooting members held in a position ready to insert the pick of weft yarn into the shed, the retaining means being disengaged from the cam when the cam is being rotated from one of the angular positions thereof into another.
摘要:
A method of calculating an ion concentration distribution is provided. The method includes: setting meshes at regular intervals d along a beam axis of a beam implanted at a tilt angle α; making mesh intervals on a surface d/sinα; generating meshes parallel and perpendicular to the beam axis in a simulator; and calculating an ion concentration distribution by using the meshes.
摘要:
A motor drive unit comprises a DC power source, a plurality of inverter circuits for converting the a power of this DC power source to an AC power, current detectors for detecting an output current of at least one of those plurality of inverter circuits and a controller for performing PWM control of those plurality of inverter circuits. This controller is constructed in a way to synchronize a PWM period of the plurality of inverter circuits, so as to drive a plurality of motors at once by means of those plurality of inverter circuits respectively.
摘要:
A magneto-resistive effect head including: an antiferromagnetic layer; a pinned layer which is formed on the antiferromagnetic layer and whose magnetizing direction has been fixed; a spacer formed on the pinned layer; a free layer formed on the spacer; and magnetic domain control layers having antiferromagnetic flims and magnet layers for performing a magnetic domain control of the free layer; wherein the each of the antiferromagnetjc films is formed on the free layer; wherein the each of magnet layers has at least two magnetic films coupled anti-ferromagnetically through at least one nonmagnetic film; a pair of lead layers for supplying a current to the stack of layers; and wherein seed layers are formed between the antiferromagnetic films and the lead layers.
摘要:
Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.
摘要:
A cloth roller replacement system for at least one weaving machine, includes an actuating system for removing a full cloth roller from the machine and then installing an empty cloth roller in its place. The system further includes an instrument for measuring a fabric take-up quantity of the machine, a device for presetting a timing for preparation, and a controller for preliminarily making the actuating system ready for replacement at the preset timing for preparation, and then controlling the actuating system to perform the cloth roller replacement without stopping the machine.
摘要:
Even if the track and gap widths are made narrow in a read head, a narrow track head has so far been unable to afford satisfactory off-track characteristics because of a wide shield spacing over electrodes. The invention provides a magnetic head wherein, in the height direction of a magnetoresistive element, the spacing between an upper magnetic shield and a lower magnetic shield at an air bearing surface is narrower than the spacing between the upper and lower magnetic shields formed over a thickest portion of each of electrodes in contact with associated magnetic domain control layers.
摘要:
Embodiments of the present invention prevent a pinned layer from suffering magnetization reversal by external stress in a magnetic head of magnetoresistance effect type which has a synthetic ferri-magnetic pinned layer structure with an antiferromagnetic layer of IrMnCr. According to one embodiment, a read element of a magnetoresistive head is made up of a antiferromagnetic layer, a first pinned layer, an antiferromagnetically coupled layer 4, a second pinned layer, and a free layer, which are stacked one over another. The first and second pinned layers and have a composition of Co75Fe25 and Co95Fe5, respectively, and a thickness of 18 Å (3.5 nm·T) and 21 Å (3.9 nm·T), respectively, so as to reduce the difference in anisotropic energy between the first pinned layer in contact with the antiferromagnetic layer and the second pinned layer in contact with the nonmagnetic conductive layer. In this way it is possible to reduce the difference |λ1−λ2| in magnetostriction constant between the first and second pinned layers and below 5.0×10−6. Thus it is possible to protect the pinned layer from external stress and magnetic field which rotate the direction of magnetization.
摘要:
Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle θ which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.
摘要:
A recording/reproducing separated type magnetic head comprising a first magnetic domain control layer for arranging the magnetizing direction of a free layer included in a magneto-resistive element to a predetermined direction, and a second magnetic domain control layer for generating a magnetic field in the direction opposite thereto to constitute a differential type bias structure. The recording/reproducing separated type magnetic head decreases an excessively strengthened longitudinal bias magnetic field in a central portion at a narrow track width while avoiding decrease of the fixed magnetic field at the end of the magneto-resistive element in the direction of the track width.