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    Slurry for CMP, polishing method and method of manufacturing semiconductor device
    5.
    发明授权
    Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
    用于CMP的浆料，抛光方法和制造半导体器件的方法

    公开(公告)号：US07060621B2

    公开(公告)日：2006-06-13

    申请号：US10838261

    申请日：2004-05-05

    申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

    发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8  (A) 0.7≦w1/(w1+w2)≦0.97  (B) 3≦d2/d1≦5  (C) 0.7≦w1/(w1+w2)≦0.9.  (D)

    摘要翻译： 公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子 其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比， 其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =“ “end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= w1 /（w1 + w2）<= 0.97（B） line-formu lae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 5（C） <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 0.7 <= w1 /（ w1 + w2）<= 0.9。 （D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

    Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device
    9.
    发明申请
    Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device 有权
    有机薄膜的化学机械抛光方法及制造半导体器件的方法

    公开(公告)号：US20090068841A1

    公开(公告)日：2009-03-12

    申请号：US12289326

    申请日：2008-10-24

    申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

    发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

    IPC分类号： H01L21/304

    CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

    摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

    摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

    Slurry for CMP, polishing method and method of manufacturing semiconductor device
    10.
    发明授权
    Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
    用于CMP的浆料，抛光方法和制造半导体器件的方法

    公开(公告)号：US07332104B2

    公开(公告)日：2008-02-19

    申请号：US11407945

    申请日：2006-04-21

    申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

    发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

    IPC分类号： C09K13/00

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8  (A) 0.7≦w1/(w1+w2)≦0.97  (B) 3≦d2/d1≦5  (C) 0.7≦w1/(w1+w2)≦0.9.  (D)

    摘要翻译： 公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d1的第一胶体粒子，第一胶体粒子的重量为w1，第二胶体粒子具有 一次粒径大于第一胶体粒子的粒径，平均粒径为d2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比为d 2，d2 选择w1和w2同时满足以下条件（A）和（B），不包括d1，d2，w1和w2同时符合以下条件（C）和（D）的情况：<？在线公式描述=“ 在线公式“end =”lead“？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =”In-line Formulas“end =”tail“？> line-formula description =“In-line Formulas”end =“lead”？> 0.7 <= w1 /（w1 + w2）<= 0.97（B）<？in-line-formula description =“I 3线=公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 3 <= d2 / d1 <= 5（C） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.7 <= w1 /（w1 + w2） <= 0.9。 （D）<？in-line-formula description =“In-line Formulas”end =“tail”？>