公开(公告)号：US07833431B2

公开(公告)日：2010-11-16

申请号：US11561071

申请日：2006-11-17

申请人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： B44C1/22 ,  H01L21/302 ,  C09K13/00 ,  C03C15/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.

摘要翻译： 提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。 树脂颗粒在表面附近具有范围为10nm至1.65μm的曲率半径的突起。 树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

公开(公告)号：US20070128873A1

公开(公告)日：2007-06-07

申请号：US11561071

申请日：2006-11-17

申请人： Gaku MINAMIHABA ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku MINAMIHABA ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00 ,  H01L21/461 ,  C03C15/00 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.

摘要翻译： 提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。 树脂颗粒伴随着表面上具有10nm至1.65μm的曲率半径的突起。 树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

公开(公告)号：US20050037693A1

公开(公告)日：2005-02-17

申请号：US10882362

申请日：2004-07-02

申请人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

发明人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/02074 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

公开(公告)号：US06935928B2

公开(公告)日：2005-08-30

申请号：US10882362

申请日：2004-07-02

申请人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

发明人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/321 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

摘要翻译： 化学机械研磨用水系分散体包含由磨粒构成的成分（A），由喹啉羧酸和吡啶羧酸中的至少一种构成的成分（B），由喹啉羧酸以外的有机酸构成的成分（C），吡啶羧酸 酸和由氧化剂组成的组分（D），其中组分（B）的含量（WB）与组分（C）的含量（WC）的质量比（WB / WC）不小于 0.01和小于2，由氨和铵离子组成的氨组分的浓度不大于0.005mol / l。 根据化学机械研磨水分散体，能够高效率地研磨各种被处理层，能够得到高精度的平坦化的抛光面。

公开(公告)号：US06858539B2

公开(公告)日：2005-02-22

申请号：US10330105

申请日：2002-12-30

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hiroyuki Yano

IPC分类号： H01L21/3205 ,  C09G1/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/02074 ,  C09G1/02 ,  H01L21/3212

摘要： There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.

摘要翻译： 公开了包含水的后CMP处理液，分散在水中的树脂粒子，在其表面具有官能团，或由水，分散在水中的树脂粒子构成的具有官能团的添加剂， 水。 后CMP处理液的绝缘膜和导电膜的抛光速度为10nm / min以下。

公开(公告)号：US20050118819A1

公开(公告)日：2005-06-02

申请号：US11025940

申请日：2005-01-03

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hiroyuki Yano

IPC分类号： H01L21/3205 ,  C09G1/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C09G1/02 ,  H01L21/3212

摘要： There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.

公开(公告)号：US06576554B2

公开(公告)日：2003-06-10

申请号：US09903533

申请日：2001-07-13

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Dai Fukushima

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Dai Fukushima

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  C11D3/14 ,  C11D11/0047

摘要： A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified by thermocompression bonding.

公开(公告)号：US08575030B2

公开(公告)日：2013-11-05

申请号：US13196594

申请日：2011-08-02

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

IPC分类号： H01L21/302

CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

公开(公告)号：US20120034846A1

公开(公告)日：2012-02-09

申请号：US13196594

申请日：2011-08-02

申请人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

发明人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

IPC分类号： B24B51/00

CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

公开(公告)号：US07402521B2

公开(公告)日：2008-07-22

申请号：US11418070

申请日：2006-05-05

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/31058 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  H01L27/10867

摘要： There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing pad and the polishing head.

摘要翻译： 提出了抛光方法。 该方法包括将浆料进料到抛光垫上，将保持在抛光头上的半导体衬底与抛光垫压接，半导体衬底上具有有机膜，并通过重复旋转顺序化学机械抛光有机膜， 停止抛光垫和抛光头的旋转。