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    Method of manufacturing semiconductor device
    1.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08480915B2

    公开(公告)日：2013-07-09

    申请号：US13236229

    申请日：2011-09-19

    Applicant: Gaku Minamihaba ,  Yukiteru Matsui

    Inventor： Gaku Minamihaba ,  Yukiteru Matsui

    IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC classification number: B24B57/02 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/76224

    Abstract: According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.

    Abstract translation: 根据一个实施例，制造半导体器件的方法包括使形成在半导体衬底上的膜与支撑在转台上的旋转抛光垫接触，并将抛光泡沫馈送到与其接触的抛光垫的区域 ，从而研磨膜。 抛光泡沫是通过将水性分散体转化为泡沫体而获得的。 所述水分散体包含0.01〜20质量％的磨粒和0.01〜1质量％的泡沫形成保持剂，全部以水分散体的总质量为基准。

    PLANARIZING METHOD
    2.
    发明申请
    PLANARIZING METHOD 有权
    平面化方法

    公开(公告)号：US20130157464A1

    公开(公告)日：2013-06-20

    申请号：US13603924

    申请日：2012-09-05

    Applicant: Akifumi GAWASE ,  Yukiteru Matsui

    Inventor： Akifumi GAWASE ,  Yukiteru Matsui

    IPC: H01L21/306 ,  B44C1/22

    CPC classification number: H01L21/31055 ,  H01L21/28273 ,  H01L21/76275 ,  H01L21/76283

    Abstract: According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a processing solution by bringing the surface to be processed into contact with or close proximity with the surface of a solid-state plate on which fluorine is adsorbed. The bonding energy between fluorine and the solid-state plate is lower than that between fluorine and silicon.

    Abstract translation: 根据一个实施例，提出了一种平面化方法。 在平面化方法中，通过使待处理的表面与固态板的表面接触或接近固化板的表面，在处理溶液中对包含氧化硅膜的被处理物进行处理的表面被平坦化 哪些氟被吸附。 氟和固态板之间的结合能低于氟和硅之间的键合能。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120258597A1

    公开(公告)日：2012-10-11

    申请号：US13236229

    申请日：2011-09-19

    Applicant: Gaku Minamihaba ,  Yukiteru Matsui

    Inventor： Gaku Minamihaba ,  Yukiteru Matsui

    IPC: H01L21/304 ,  H01L21/306 ,  B24B41/06

    CPC classification number: B24B57/02 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/76224

    Abstract: According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.

    Abstract translation: 根据一个实施例，制造半导体器件的方法包括使形成在半导体衬底上的膜与支撑在转台上的旋转抛光垫接触，并将抛光泡沫馈送到与其接触的抛光垫的区域 ，从而研磨膜。 抛光泡沫是通过将水性分散体转化为泡沫体而获得的。 所述水分散体包含0.01〜20质量％的磨粒和0.01〜1质量％的泡沫形成保持剂，全部以水分散体的总质量为基准。

    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07985685B2

    公开(公告)日：2011-07-26

    申请号：US12262439

    申请日：2008-10-31

    Applicant: Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    Inventor： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC: H01L21/311

    CPC classification number: H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

    Abstract: A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

    Abstract translation: 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

    Slurry for CMP, polishing method and method of manufacturing semiconductor device
    9.
    发明授权
    Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
    用于CMP的浆料，抛光方法和制造半导体器件的方法

    公开(公告)号：US07060621B2

    公开(公告)日：2006-06-13

    申请号：US10838261

    申请日：2004-05-05

    Applicant: Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

    Inventor： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

    IPC: H01L21/302

    CPC classification number: H01L21/3212 ,  C09G1/02

    Abstract: Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8  (A) 0.7≦w1/(w1+w2)≦0.97  (B) 3≦d2/d1≦5  (C) 0.7≦w1/(w1+w2)≦0.9.  (D)

    Abstract translation: 公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子 其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比， 其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =“ “end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= w1 /（w1 + w2）<= 0.97（B） line-formu lae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 5（C） <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 0.7 <= w1 /（ w1 + w2）<= 0.9。 （D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

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