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    Method for monitoring a density profile of impurities
    1.
    发明授权
    Method for monitoring a density profile of impurities 有权
    监测杂质浓度分布的方法

    公开(公告)号：US07186577B2

    公开(公告)日：2007-03-06

    申请号：US10787772

    申请日：2004-02-27

    申请人： Yun-Jung Jee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

    发明人： Yun-Jung Jee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

    IPC分类号： H01L21/66

    CPC分类号： G01N21/9501

    摘要： A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

    摘要翻译： 一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器 用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。 可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

    Method and apparatus for measuring contamination of a semiconductor substrate
    2.
    发明授权
    Method and apparatus for measuring contamination of a semiconductor substrate 失效
    用于测量半导体衬底的污染物的方法和装置

    公开(公告)号：US06927077B2

    公开(公告)日：2005-08-09

    申请号：US10704753

    申请日：2003-11-12

    申请人： Tae-Min Eom ,  Yu-Sin Yang ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    发明人： Tae-Min Eom ,  Yu-Sin Yang ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

    IPC分类号： H01L21/66 ,  G01R31/303 ,  G01R31/311 ,  H01L21/00 ,  G01N21/00 ,  G01R31/302

    CPC分类号： G01R31/303 ,  G01R31/311

    摘要： An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.

    摘要翻译： 一种用于测量半导体衬底的污染的装置，包括用于装载衬底的卡盘，位置检测装置，用于识别所加载的衬底的前表面，以获得要测量的衬底的一部分的位置数据，用于移动的第一驱动部件 所述卡盘根据位置数据来测量所述基板的后部;以及表面测量装置，设置在所述卡盘下方，用于选择性地测量所述基板的后部处的所述基板的金属污染。 在操作中，将基板装载到卡盘上，通过识别形成在基板上的图案来获得要测量的基板的一部分的位置数据，然后根据位置数据移动基板，以测量基板的后部 衬底和金属污染物在衬底的后部被选择性地测量。

    Apparatus for monitoring a density profile of impurities
    3.
    发明申请
    Apparatus for monitoring a density profile of impurities 审中-公开
    用于监测杂质密度分布的装置

    公开(公告)号：US20070222999A1

    公开(公告)日：2007-09-27

    申请号：US11710579

    申请日：2007-02-26

    申请人： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

    发明人： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

    IPC分类号： G01R31/26

    CPC分类号： G01N21/9501

    摘要： A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

    摘要翻译： 一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器 用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。 可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

    Apparatus and method for manufacturing semiconductor devices through layer material dimension analysis
    5.
    发明申请
    Apparatus and method for manufacturing semiconductor devices through layer material dimension analysis 有权
    通过层材料尺寸分析制造半导体器件的装置和方法

    公开(公告)号：US20090325326A1

    公开(公告)日：2009-12-31

    申请号：US12457873

    申请日：2009-06-24

    申请人： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

    发明人： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

    IPC分类号： H01L21/66 ,  G01J4/00

    CPC分类号： G01N21/3563 ,  G01J3/447 ,  G01J4/00 ,  G01N21/9501 ,  H01L22/12

    摘要： Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

    摘要翻译： 通过层材料尺寸分析制造半导体器件的装置和方法提高了生产率。 该方法包括在半导体工艺装置中执行至少一个参考基板和至少一个目标基板的半导体制造工艺，检测参考基板的参考光谱和参考分布，确定所检测的参考光谱和参考光谱之间的关系函数 检测目标衬底的实时光谱，并且通过使用检测到的实时光谱作为确定的关系函数中的变量来实时确定在半导体处理装置中处理的目标衬底的实时曲线。