公开(公告)号：US20070222999A1

公开(公告)日：2007-09-27

申请号：US11710579

申请日：2007-02-26

申请人： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

发明人： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

IPC分类号： G01R31/26

CPC分类号： G01N21/9501

摘要： A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

摘要翻译： 一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器 用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。 可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

公开(公告)号：US06927077B2

公开(公告)日：2005-08-09

申请号：US10704753

申请日：2003-11-12

申请人： Tae-Min Eom ,  Yu-Sin Yang ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

发明人： Tae-Min Eom ,  Yu-Sin Yang ,  Kwan-Woo Ryu ,  Park-Song Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

IPC分类号： H01L21/66 ,  G01R31/303 ,  G01R31/311 ,  H01L21/00 ,  G01N21/00 ,  G01R31/302

CPC分类号： G01R31/303 ,  G01R31/311

摘要： An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.

摘要翻译： 一种用于测量半导体衬底的污染的装置，包括用于装载衬底的卡盘，位置检测装置，用于识别所加载的衬底的前表面，以获得要测量的衬底的一部分的位置数据，用于移动的第一驱动部件 所述卡盘根据位置数据来测量所述基板的后部;以及表面测量装置，设置在所述卡盘下方，用于选择性地测量所述基板的后部处的所述基板的金属污染。 在操作中，将基板装载到卡盘上，通过识别形成在基板上的图案来获得要测量的基板的一部分的位置数据，然后根据位置数据移动基板，以测量基板的后部 衬底和金属污染物在衬底的后部被选择性地测量。

公开(公告)号：US07186577B2

公开(公告)日：2007-03-06

申请号：US10787772

申请日：2004-02-27

申请人： Yun-Jung Jee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

发明人： Yun-Jung Jee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

IPC分类号： H01L21/66

CPC分类号： G01N21/9501

摘要： A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

摘要翻译： 一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器 用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。 可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

公开(公告)号：US20090325326A1

公开(公告)日：2009-12-31

申请号：US12457873

申请日：2009-06-24

申请人： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

发明人： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

IPC分类号： H01L21/66 ,  G01J4/00

CPC分类号： G01N21/3563 ,  G01J3/447 ,  G01J4/00 ,  G01N21/9501 ,  H01L22/12

摘要： Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

摘要翻译： 通过层材料尺寸分析制造半导体器件的装置和方法提高了生产率。 该方法包括在半导体工艺装置中执行至少一个参考基板和至少一个目标基板的半导体制造工艺，检测参考基板的参考光谱和参考分布，确定所检测的参考光谱和参考光谱之间的关系函数 检测目标衬底的实时光谱，并且通过使用检测到的实时光谱作为确定的关系函数中的变量来实时确定在半导体处理装置中处理的目标衬底的实时曲线。

公开(公告)号：US08551791B2

公开(公告)日：2013-10-08

申请号：US12457873

申请日：2009-06-24

申请人： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

发明人： Jang-Ik Park ,  Chung-Sam Jun ,  Hwan-Shik Park ,  Ji-Hye Kim ,  Kwan-Woo Ryu ,  Kong-Jung Sa ,  So-Yeon Yun

IPC分类号： H01L21/00 ,  G06K9/00 ,  G01N21/00

CPC分类号： G01N21/3563 ,  G01J3/447 ,  G01J4/00 ,  G01N21/9501 ,  H01L22/12

摘要： Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

公开(公告)号：US07573568B2

公开(公告)日：2009-08-11

申请号：US10909238

申请日：2004-07-30

申请人： Yu-Sin Yang ,  Chung-Sam Jun ,  Sang-Mun Chon ,  Sun-Yong Choi

发明人： Yu-Sin Yang ,  Chung-Sam Jun ,  Sang-Mun Chon ,  Sun-Yong Choi

IPC分类号： G01N21/00

CPC分类号： G03F7/70608 ,  G03F7/70616

摘要： An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.

摘要翻译： 用于监测光刻工艺的装置包括测量器和数据处理器。 测量器测量衬底的光学特性。 数据处理器基于光学测量器来确定衬底的缺陷。

公开(公告)号：US07405817B2

公开(公告)日：2008-07-29

申请号：US10786137

申请日：2004-02-26

申请人： Pil-Sik Hyun ,  Sun-Yong Choi ,  Sang-Kil Lee ,  Chung-Sam Jun ,  Sang-Min Kim

发明人： Pil-Sik Hyun ,  Sun-Yong Choi ,  Sang-Kil Lee ,  Chung-Sam Jun ,  Sang-Min Kim

IPC分类号： G01N21/00 ,  G01J4/00

CPC分类号： G01N21/956 ,  G01N21/9501

摘要： A method for classifying defects of an object includes irradiating lights having different polarizations onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different polarizations to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.

摘要翻译： 用于对物体的缺陷进行分类的方法包括将具有不同极化的光照射到物体上以在物体上产生检查点，收集由检查点散射的照射光产生的散射光，并根据缺陷类型对物体的缺陷进行分类 通过分析散射光。 用于对物体的缺陷进行分类的装置包括发光装置，其发射具有不同偏振度的光以在物体上产生检查点;以及检测部件，用于收集从检查点散射的光产生的散射光，其中散射光 根据位于物体检查点的缺陷进行分析和分类。

公开(公告)号：US07289661B2

公开(公告)日：2007-10-30

申请号：US10661633

申请日：2003-09-15

申请人： Chung-Sam Jun ,  Sun-Yong Choi ,  Kwang-Soo Kim ,  Joo-Woo Kim ,  Jeong-Hyun Choi ,  Dong-Jin Park

发明人： Chung-Sam Jun ,  Sun-Yong Choi ,  Kwang-Soo Kim ,  Joo-Woo Kim ,  Jeong-Hyun Choi ,  Dong-Jin Park

IPC分类号： G06K9/00

CPC分类号： H01L21/67253 ,  G01N21/9503 ,  G01N21/95607 ,  G01N2021/0162 ,  G01N2021/0187 ,  G01N2021/1736 ,  G01N2021/1772 ,  G01N2021/8411 ,  G01N2021/8896 ,  G01N2021/95615 ,  G01N2201/103 ,  G01N2201/1087

摘要： An automated and integrated substrate inspecting apparatus for performing an EBR/EEW inspection, a defect inspection of patterns and reticle error inspection of a substrate includes a first stage for supporting a substrate; a first image acquisition unit for acquiring a first image of a peripheral portion of the substrate supported by the first stage; a second stage for supporting the substrate; a second image acquisition unit for acquiring a second image of the substrate supported by the second stage; a transfer robot for transferring the substrate between the first stage and the second stage; and a data processing unit, connected to the first image acquisition unit and the second image acquisition unit, for inspecting results of an edge bead removal process and an edge exposure process performed on the substrate using the first image, and for inspecting for defects of patterns formed on the substrate using the second image.

摘要翻译： 用于执行EBR / EEW检查的自动化和一体化的基板检查装置，对基板的图案和掩模版错误检查的缺陷检查包括用于支撑基板的第一阶段; 第一图像获取单元，用于获取由所述第一平台支撑的所述基板的周边部分的第一图像; 用于支撑衬底的第二阶段; 第二图像获取单元，用于获取由第二平台支撑的基板的第二图像; 用于在第一阶段和第二阶段之间转移衬底的传送机器人; 以及数据处理单元，连接到第一图像获取单元和第二图像获取单元，用于检查使用第一图像在基板上执行的边缘珠去除处理和边缘曝光处理的结果，并且用于检查图案的缺陷 使用第二图像在基板上形成。

公开(公告)号：US07271890B2

公开(公告)日：2007-09-18

申请号：US10903852

申请日：2004-07-30

申请人： Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

发明人： Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

IPC分类号： G01N21/00

CPC分类号： G01N21/9501 ,  G01N21/55

摘要： In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.

摘要翻译： 在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。 获得多个区域中的每一个的反射率。 使用反射率确定每个区域的放大率。 光照射到这些区域上。 从第一区域反射的光被第一区域确定的第一放大率放大。 检测到将照射的光从第一区域移动到第二区域。 从第二区域反射的光被第二区域确定的第二放大率放大。 分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

公开(公告)号：US20050134867A1

公开(公告)日：2005-06-23

申请号：US11012005

申请日：2004-12-13

申请人： Koung-Su Shin ,  Kwang-Jun Yoon ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Dong-Jin Park

发明人： Koung-Su Shin ,  Kwang-Jun Yoon ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Dong-Jin Park

IPC分类号： H01L21/66 ,  G03F7/20 ,  G01B11/14

CPC分类号： G03F7/70616

摘要： A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.

摘要翻译： 提供了测量半导体图形的距离的系统和方法。 该系统包括显微镜和控制单元。 控制单元计算包括斑点，相对于标准点的点的点坐标，来自两个标准坐标和点坐标的点的实际坐标的视场中的标准点的标准坐标，以及最后两个点之间的距离 第一个和第二个实际坐标。 使用高倍率，结合像素计数确定坐标，允许更精确的距离测量。