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    ANTIBODY THERAPY FOR HIGHLY PATHOGENIC AVIAN INFLUENZA VIRUS
    3.
    发明申请
    ANTIBODY THERAPY FOR HIGHLY PATHOGENIC AVIAN INFLUENZA VIRUS 审中-公开
    用于高致病性AVIAN流感病毒的抗体治疗

    公开(公告)号：US20100266606A1

    公开(公告)日：2010-10-21

    申请号：US12767718

    申请日：2010-04-26

    申请人： Young Shik Cho ,  Gun Woo Ha ,  Jin Sik Oh ,  Byung Gi Cho ,  Yun Jung Lee

    发明人： Young Shik Cho ,  Gun Woo Ha ,  Jin Sik Oh ,  Byung Gi Cho ,  Yun Jung Lee

    IPC分类号： A61K39/42 ,  C07K16/10 ,  C12N5/12 ,  C07H21/04 ,  A61P31/16

    CPC分类号： C07K16/1018 ,  A61K2039/505

    摘要： The present invention relates to a monoclonal antibody against hemagglutinin of highly pathogenic avian influenza virus subtype H5 or functional fragment thereof, a hybridoma producing the monoclonal antibody, and a composition comprising the monoclonal antibody or functional fragment thereof. In addition, the present invention relates to a method for preventing or treating influenza virus infection by administering the composition to a subject, and an assay kit for influenza virus comprising the monoclonal antibody or functional fragment thereof.

    摘要翻译： 本发明涉及针对高致病性禽流感病毒亚型H5或其功能片段的血细胞凝集素的单克隆抗体，产生单克隆抗体的杂交瘤以及包含单克隆抗体或其功能片段的组合物。 此外，本发明涉及一种通过向受试者施用组合物来预防或治疗流感病毒感染的方法，以及包含单克隆抗体或其功能片段的用于流感病毒的测定试剂盒。

    Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment
    4.
    发明授权
    Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment 失效
    通过两步热处理制造半导体存储器件电容器的方法

    公开(公告)号：US06472319B2

    公开(公告)日：2002-10-29

    申请号：US09851910

    申请日：2001-05-09

    申请人： Seok-jun Won ,  Yun-jung Lee ,  Soon-yeon Park ,  Cha-young Yoo ,  Doo-sup Hwang ,  Eun-ae Chung ,  Wan-don Kim

    发明人： Seok-jun Won ,  Yun-jung Lee ,  Soon-yeon Park ,  Cha-young Yoo ,  Doo-sup Hwang ,  Eun-ae Chung ,  Wan-don Kim

    IPC分类号： H01L2144

    CPC分类号： H01L28/55 ,  H01L28/65

    摘要： A method for manufacturing a capacitor of a semiconductor memory device by a two-step thermal treatment is provided. A lower electrode is formed on a semiconductor substrate. A dielectric layer is formed over the lower electrode. An upper electrode formed of a noble metal is formed over the dielectric layer. The resultant having the upper electrode undergoes a first thermal treatment under a first atmosphere including oxygen at a first temperature which is selected to be within a range of 200-600° C., which is lower than the oxidation temperature of the upper electrode. The first thermally treated resultant undergoes a second thermal treatment under a second atmosphere without oxygen at a second temperature which is selected to be within a range of 300-900° C., which is higher than the first temperature.

    摘要翻译： 提供了通过两步热处理制造半导体存储器件的电容器的方法。 在半导体衬底上形成下电极。 在下电极上形成电介质层。 在电介质层上形成由贵金属形成的上电极。 具有上电极的所得物在包含氧的第一气氛下进行第一热处理，所述第一气氛在第一温度下被选择在低于上电极的氧化温度的200-600℃的范围内。 第一热处理产物在第二温度下在没有氧的第二气氛下进行第二热处理，第二温度选择在比第一温度高的300-900℃的范围内。

    Apparatus for monitoring a density profile of impurities
    9.
    发明申请
    Apparatus for monitoring a density profile of impurities 审中-公开
    用于监测杂质密度分布的装置

    公开(公告)号：US20070222999A1

    公开(公告)日：2007-09-27

    申请号：US11710579

    申请日：2007-02-26

    申请人： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

    发明人： Yun-Jung Lee ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwan-Woo Ryu

    IPC分类号： G01R31/26

    CPC分类号： G01N21/9501

    摘要： A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

    摘要翻译： 一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器 用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。 可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。