公开(公告)号：US08536609B2

公开(公告)日：2013-09-17

申请号：US13552100

申请日：2012-07-18

申请人： Yun-Mo Chung ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

发明人： Yun-Mo Chung ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

IPC分类号： H01L33/00

CPC分类号： H01L51/5253 ,  H01L51/5256

摘要： An organic light emitting diode display includes a substrate, an organic light emitting diode provided on the substrate and including a first electrode, an organic emission layer, and a second electrode, a packed layer on the organic light emitting diode, and a protective layer on the packed layer, the protective layer including at least one of a graphene oxide and a graphene nitride.

摘要翻译： 有机发光二极管显示器包括：衬底，设置在衬底上的有机发光二极管，包括第一电极，有机发射层和第二电极，有机发光二极管上的封装层和保护层 所述填充层，所述保护层包括氧化石墨烯和氮化石墨烯中的至少一种。

公开(公告)号：US20130200422A1

公开(公告)日：2013-08-08

申请号：US13552100

申请日：2012-07-18

申请人： Yun-Mo CHUNG ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

发明人： Yun-Mo CHUNG ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

IPC分类号： H01L33/44

CPC分类号： H01L51/5253 ,  H01L51/5256

摘要： An organic light emitting diode display includes a substrate, an organic light emitting diode provided on the substrate and including a first electrode, an organic emission layer, and a second electrode, a packed layer on the organic light emitting diode, and a protective layer on the packed layer, the protective layer including at least one of a graphene oxide and a graphene nitride.

摘要翻译： 有机发光二极管显示器包括：衬底，设置在衬底上的有机发光二极管，包括第一电极，有机发射层和第二电极，有机发光二极管上的封装层和保护层 所述填充层，所述保护层包括氧化石墨烯和氮化石墨烯中的至少一种。

公开(公告)号：US08841206B2

公开(公告)日：2014-09-23

申请号：US13211700

申请日：2011-08-17

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32

CPC分类号： H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

摘要翻译： 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US08507917B2

公开(公告)日：2013-08-13

申请号：US13209617

申请日：2011-08-15

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Jae-Wan Jung

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Jae-Wan Jung

IPC分类号： H01L21/322

CPC分类号： H01L29/4908 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer.

摘要翻译： 薄膜晶体管包括衬底，设置在衬底上并通过使用金属催化剂结晶的半导体层，绝缘并设置在半导体层上的栅电极以及设置在半导体层和栅电极之间的吸气剂层，并形成 其中金属氧化物的扩散系数小于半导体层中的金属催化剂的扩散系数。

公开(公告)号：US08373097B2

公开(公告)日：2013-02-12

申请号：US12713982

申请日：2010-02-26

申请人： Heung-Yeol Na ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Heung-Yeol Na ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F27D11/00 ,  A21B1/00 ,  A21B1/22

CPC分类号： F27B17/0025 ,  H01L21/67109

摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

摘要翻译： 一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。 这里，加热器安装成对应于多个基板的所有侧面。 因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。

公开(公告)号：US20120049199A1

公开(公告)日：2012-03-01

申请号：US13137428

申请日：2011-08-15

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Tak-Young Lee ,  Jong-Ryuk Park

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Tak-Young Lee ,  Jong-Ryuk Park

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L33/16 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1218 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/78603

摘要： A method of forming a polycrystalline layer includes forming a buffer layer on a substrate; treating the buffer layer with hydrogen plasma; forming an amorphous silicon layer on the buffer layer; forming a metallic catalyst layer for crystallizing the amorphous silicon layer on the amorphous silicon layer; and heat treating the amorphous silicon layer to form a polycrystalline silicon layer.

摘要翻译： 形成多晶层的方法包括在基板上形成缓冲层; 用氢等离子体处理缓冲层; 在缓冲层上形成非晶硅层; 形成用于使非晶硅层上的非晶硅层结晶的金属催化剂层; 并且对非晶硅层进行热处理以形成多晶硅层。

公开(公告)号：US08048783B2

公开(公告)日：2011-11-01

申请号：US12714252

申请日：2010-02-26

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US20110248277A1

公开(公告)日：2011-10-13

申请号：US12975809

申请日：2010-12-22

申请人： Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L27/12 ,  H01L21/20 ,  H01L21/84

CPC分类号： H01L21/02532 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

摘要： A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment.

摘要翻译： 一种使非晶硅层结晶的方法，使用其的薄膜晶体管的制造方法和使用该制造方法的薄膜晶体管，所述结晶方法包括：形成非晶硅层; 将结晶催化剂颗粒定位在待分离的非晶硅层上; 从非晶硅层的一部分选择性地除去结晶催化剂颗粒; 并通过热处理使非晶硅层结晶。

公开(公告)号：US20110233529A1

公开(公告)日：2011-09-29

申请号：US12929694

申请日：2011-02-09

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

IPC分类号： H01L51/52 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66757 ,  H01L29/78618 ,  H01L51/0081

摘要： A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

摘要翻译： 一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域， 插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极 在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过 第一和第二接触孔。

公开(公告)号：US20110120859A1

公开(公告)日：2011-05-26

申请号：US12948650

申请日：2010-11-17

申请人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： C23C14/34 ,  C23C14/18

CPC分类号： C23C14/3407 ,  C23C14/185 ,  C23C14/34 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3438

摘要： Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.

摘要翻译： 提供一种溅射装置，其以非常低的浓度将金属催化剂沉积在非晶硅层上以使非晶硅结晶，并且特别地最小化由预溅射工艺引起的金属催化剂的不均匀性而不降低工艺效率。 该溅射装置以非常低的浓度提高沉积在非晶硅层上的金属催化剂的均匀性。 溅射装置包括具有第一和第二区域的处理室，位于处理室内的金属靶，移动金属靶的靶转印单元，具有用于控制从金属靶排出的金属催化剂的行进方向的第一屏蔽件， 以及设置在所述第二区域中以能够面对所述金属靶的衬底保持器。 作为装载在基板保持架上的基板与金属对象物之间的距离的线性距离与第一屏蔽件的长度之间的距离差小于3cm。