摘要:
A filter formed of film bulk acoustic resonators has a topology that enables a trimming inductor to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor is connected between the common electrode and ground potential. A third shunt resonator is connected between the series-connected resonators and ground potential.
摘要:
A filter formed of film bulk acoustic resonators has a topology that enables a trimming inductor to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor is connected between the common electrode and ground potential. A third shunt resonator is connected between the series-connected resonators and ground potential.
摘要:
A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.
摘要:
A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.
摘要:
A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.
摘要:
A micro electromechanical system (MEMS) device package and a method of manufacturing the same are provided. The MEMS device package includes: a device substrate with a MEMS active device being formed on the top surface thereof; internal electrode pads, each of which is positioned on the opposite side of the MEMS active device and electrically connected to the MEMS active device; sealing pads positioned outside of the internal electrode pads; a closure substrate joined to the device substrate through the sealing pads, the closure substrate having via holes formed at the areas where the internal electrode pads are positioned; and external electrode pads formed on the top surface of the closure substrate in such a way that the external electrode pads are electrically connected to the internal electrode pads through the via holes. The internal electrode pads and the sealing pads are formed from an identical material such as Au and thus the device substrate and the closure substrate are bonded to each other with direct bonding such as Au—Au direct bonding via the sealing pads.
摘要:
A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.
摘要:
A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.
摘要:
An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.
摘要:
A MEMS device package and a method of manufacturing the same. The MEMS device package includes a device substrate having a surface on which a MEMS active device is formed, and multiple sealing pads arranged around the MEMS active device so that the sealing pads provide electric paths for the MEMS active device. In addition, the MEMS device package may include a cap substrate bonded to the device substrate through the multiple sealing pads, the cap substrate including a trench, within which the MEMS active device is positioned, and via holes. One or more outer electrode pads may be formed on one surface of the cap substrate to be electrically connected with the multiple sealing pads through the via holes. Because there are several bonding and sealing areas between the device substrate and the cap substrate, the sealing intensity is strengthened.