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    DIRECT GRAPHENE GROWING METHOD
    1.
    发明申请
    DIRECT GRAPHENE GROWING METHOD 审中-公开
    直接石墨生长方法

    公开(公告)号：US20120282489A1

    公开(公告)日：2012-11-08

    申请号：US13465488

    申请日：2012-05-07

    申请人： Hyeon-jin SHIN ,  Jae-young CHOI ,  Yun-sung WOO ,  Seon-mi YOON

    发明人： Hyeon-jin SHIN ,  Jae-young CHOI ,  Yun-sung WOO ,  Seon-mi YOON

    IPC分类号： C23C16/26 ,  B32B9/00 ,  B82Y40/00 ,  B82Y30/00

    摘要： A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

    摘要翻译： 制备结晶石墨烯的方法包括进行第一热处理，包括向反应器中的无机基底供应热量，在第一热处理期间将蒸汽碳供应源引入反应器中以形成活性炭，并将活性炭与 无机底物生长晶体石墨烯。

    TRANSISTOR AND FLAT PANEL DISPLAY INCLUDING THIN FILM TRANSISTOR
    4.
    发明申请
    TRANSISTOR AND FLAT PANEL DISPLAY INCLUDING THIN FILM TRANSISTOR 有权
    晶体管和平板显示器，包括薄膜晶体管

    公开(公告)号：US20110095268A1

    公开(公告)日：2011-04-28

    申请号：US12911316

    申请日：2010-10-25

    申请人： Jae-young CHOI ,  Hyeon-jin SHIN ,  Seon-mi YOON ,  Won-mook CHOI

    发明人： Jae-young CHOI ,  Hyeon-jin SHIN ,  Seon-mi YOON ,  Won-mook CHOI

    IPC分类号： H01L29/66 ,  H01L21/84

    CPC分类号： H01L29/78696 ,  H01L29/78684

    摘要： A transistor includes at least three terminals comprising a gate electrode, a source electrode and a drain electrode, an insulating layer disposed on a substrate, and a semiconductor layer disposed on the substrate, wherein a current which flows between the source electrode and the drain electrode is controlled by application of a voltage to the gate electrode, where the semiconductor layer includes a graphene layer and at least one of a metal atomic layer and a metal ion layer, and where the metal atomic layer or the metal ion layer is interposed between the graphene layer and the insulating layer.

    摘要翻译： 晶体管包括至少三个端子，包括栅电极，源电极和漏电极，设置在基板上的绝缘层和设置在基板上的半导体层，其中在源电极和漏极之间流动的电流 通过向栅电极施加电压来控制，其中半导体层包括石墨烯层和金属原子层和金属离子层中的至少一个，并且其中金属原子层或金属离子层介于 石墨烯层和绝缘层。

    METHOD OF MODIFYING CARBON NANOTUBE USING RADICAL INITIATOR, AND DISPERSION LIQUID AND ELECTRODE COMPRISING THE CARBON NANOTUBE MODIFIED BY USING THE METHOD
    5.
    发明申请
    METHOD OF MODIFYING CARBON NANOTUBE USING RADICAL INITIATOR, AND DISPERSION LIQUID AND ELECTRODE COMPRISING THE CARBON NANOTUBE MODIFIED BY USING THE METHOD 有权
    使用放射性发光体修饰碳纳米管的方法和包含使用该方法改性的碳纳米管的分散液和电极

    公开(公告)号：US20080296539A1

    公开(公告)日：2008-12-04

    申请号：US12026081

    申请日：2008-02-05

    申请人： Hyeon-jin SHIN ,  Jae-young CHOI ,  Seong-jae CHOI ,  Seon-mi YOON

    发明人： Hyeon-jin SHIN ,  Jae-young CHOI ,  Seong-jae CHOI ,  Seon-mi YOON

    IPC分类号： H01B1/04 ,  C01B31/02

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/28 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

    摘要： Provided is a method of modifying carbon nanotubes, the method including: preparing a mixed solution in which a radical initiator and a carbon nanotube are dispersed; applying energy to the mixed solution to decompose the radical initiator into a radical; and reacting the decomposed radical with a surface of the carbon nanotube, wherein the radical which has reacted with the carbon nanotube is detached from the carbon nanotube after the reaction with the carbon nanotube. In the method of modifying carbon nanotube, a radical is reacted with a carbon nanotube and then separated from the carbon nanotube to thus modify the surface of the carbon nanotube without chemical bonding. Accordingly, the conductivity of the carbon nanotube can be increased.

    摘要翻译： 提供一种碳纳米管的改性方法，该方法包括：制备分散自由基引发剂和碳纳米管的混合溶液; 向混合溶液施加能量以将自由基引发剂分解成自由基; 并使分解的自由基与碳纳米管的表面反应，其中与碳纳米管反应后与碳纳米管反应的基团与碳纳米管分离。 在碳纳米管的改性方法中，使自由基与碳纳米管反应，然后与碳纳米管分离，从而改变碳纳米管的表面，而无需化学键合。 因此，能够提高碳纳米管的导电性。