Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model
    7.
    发明授权
    Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model 有权
    基于中心到边缘模型的用于CMP径向均匀性优化的背侧压力的运行控制控制

    公开(公告)号:US07722436B2

    公开(公告)日:2010-05-25

    申请号:US11832455

    申请日:2007-08-01

    IPC分类号: B24B49/00

    CPC分类号: B24B49/03 B24B37/042

    摘要: During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

    摘要翻译: 在晶片的平坦化期间,在通过化学机械抛光对晶片进行平面化之后,在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型,控制称为“后侧压力”的化学机械抛光的参数。背面压力在一些实施例中通过基于 中心到边缘轮廓模型,模型的确定系数R平方和背侧压力的当前值。 注意,仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来,将从模型确定的背面压力用于平面化后续晶片。

    Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces
    8.
    发明授权
    Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces 失效
    化学机械纳米研磨方法用于工件超精密加工

    公开(公告)号:US07514016B2

    公开(公告)日:2009-04-07

    申请号:US10903833

    申请日:2004-07-30

    IPC分类号: B24B1/00 H01L21/00

    摘要: A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession and trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density thin film magnetic heads for hard disk drives (HDD). With a fine chemical mechanical nanogrinding process, PTR can be improved to a mean of about 0.5 nm.

    摘要翻译: 化学 - 机械纳米研磨工艺实现近零极点尖端衰退(PTR),以最小化头部换能器的磁空间损失,使介质间隔损耗,氧化铝凹陷和后缘轮廓变化最小化,并且平滑表面光洁度,同时具有跨多层 薄膜和硬质基板,以满足硬盘驱动器(HDD)的高密度薄膜磁头的要求。 通过精细的化学机械纳米研磨工艺,PTR可以提高到约0.5nm的平均值。

    METHODS FOR FABRICATING A MAGNETIC HEAD READER USING A CHEMICAL MECHANICAL POLISHING (CMP) PROCESS FOR SENSOR STRIPE HEIGHT PATTERNING
    9.
    发明申请
    METHODS FOR FABRICATING A MAGNETIC HEAD READER USING A CHEMICAL MECHANICAL POLISHING (CMP) PROCESS FOR SENSOR STRIPE HEIGHT PATTERNING 有权
    使用化学机械抛光(CMP)方法制造磁头阅读器的方法用于传感器条带高度图案

    公开(公告)号:US20080274623A1

    公开(公告)日:2008-11-06

    申请号:US11743404

    申请日:2007-05-02

    IPC分类号: H01L21/302

    CPC分类号: G11B5/3163 G11B5/3169

    摘要: Methods for fabricating TMR and CPP GMR magnetic heads using a chemical mechanical polishing (CMP) process with a patterned CMP conductive protective layer for sensor stripe height patterning. The method comprises defining a stripe height of a read sensor of a magnetic head reader. The method further comprises refill depositing an insulator layer on the read sensor. The method further comprises performing a CMP process down to the conductive protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the insulator layer above the conductive protective layer and to remove a sensor pattern masking structure on the conductive protective layer. As a result, the insulator layer is planarized and smooth with the read sensor, eliminating fencing and alumina bumps typically encountered in the insulator layer at the edge of the patterned sensor.

    摘要翻译: 使用化学机械抛光(CMP)工艺制造TMR和CPP GMR磁头的方法,具有用于传感器条纹高度图案化的图案化CMP导电保护层。 该方法包括定义磁头读取器的读取传感器的条带高度。 该方法还包括在读取的传感器上填充沉积绝缘体层。 该方法还包括在限定读取的传感器的同时,在读取的传感器上执行CMP处理,以去除传感器保护层上方的绝缘体层的过度填充部分,并且去除导电保护层上的传感器图案掩蔽结构 层。 结果,绝缘体层与读取传感器平坦化并且平滑,消除了在图案化传感器的边缘处的绝缘体层中通常遇到的栅栏和氧化铝凸块。

    Perpendicular magnetic write head having a magnetic write pole with a concave trailing edge
    10.
    发明申请
    Perpendicular magnetic write head having a magnetic write pole with a concave trailing edge 有权
    具有磁写入磁极的垂直磁性写头具有凹形后缘

    公开(公告)号:US20070258167A1

    公开(公告)日:2007-11-08

    申请号:US11411556

    申请日:2006-04-25

    IPC分类号: G11B5/147

    摘要: A magnetic write head for perpendicular magnetic recording having a write pole with a concave trailing edge. The magnetic write pole can have a trapezoidal shape with first and second laterally opposed sides that are further apart at the trailing edge than at the leading edge. The write head may or may not include a magnetic trailing shield, and if a trailing shield is included it is separated from the trailing edge by a non-magnetic write gap layer. The concave trailing edge improves magnetic performance such as by improving the transition curvature. A method for constructing the write head includes forming a magnetic write pole by forming a mask structure over a deposited write pole material, the mask structure having an alumina hard mask and an image transfer layer such as DURAMIDE®. An alumina fill layer is then deposited and a chemical mechanical polish is performed to open up the image transfer layer. A reactive on etch is performed to remove the image transfer layer and a reactive ion mill or reactive ion etch is performed to remove the alumina hard mask and form a concave surface on the write pole.

    摘要翻译: 用于垂直磁记录的磁写头,具有带有凹后缘的写极。 磁性写入极可以具有梯形形状,其中第一和第二横向相对侧在后缘处比在前缘处更远地分开。 写头可以包括或可以不包括磁性后屏蔽,并且如果包括后屏蔽,则其通过非磁性写间隙层与后缘分离。 凹形后边缘提高磁性能,例如通过改善转变曲率。 构成写入头的方法包括通过在沉积的写入极材料上形成掩模结构来形成磁性写入极,掩模结构具有氧化铝硬掩模和诸如DURAMIDE的图像转移层。 然后沉积氧化铝填充层,并执行化学机械抛光以打开图像转印层。 执行反应性蚀刻以去除图像转印层,并且执行反应性离子磨或反应离子蚀刻以除去氧化铝硬掩模并在写入极上形成凹面。