公开(公告)号：US20090269239A1

公开(公告)日：2009-10-29

申请号：US12158263

申请日：2006-12-19

申请人： Yutaka Nagakura ,  Kenji Tokuda ,  Makoto Morishita ,  Hiroshi Sanui ,  Yuji Nomura

发明人： Yutaka Nagakura ,  Kenji Tokuda ,  Makoto Morishita ,  Hiroshi Sanui ,  Yuji Nomura

IPC分类号： C22C21/06 ,  B22D25/06 ,  C22C21/00 ,  C09K3/00

CPC分类号： B22D21/007

摘要： To provide a method for producing an aluminum ingot whose oxides is reduced by preventing the surface of molten aluminum from being oxidized. The method according to the present invention includes a melting step (melting furnace 1) of melting an aluminum base metal into a molten aluminum or molten aluminum alloy; a holding step (holding furnace 2) of holding the resulting molten aluminum or molten aluminum alloy; a dehydrogenation step (dehydrogenation unit 3) of removing hydrogen gas from the molten aluminum or molten aluminum alloy; a filtration step (filter 4) of removing inclusions from the molten aluminum or molten aluminum alloy; and a casting step (casting device 5) of solidifying the molten aluminum or molten aluminum alloy into a predetermined shape, wherein at least one of the above steps is conducted in the atmosphere of a protective gas containing fluorinating gas, carbon dioxide gas, and nitrogen and/or argon gas.

摘要翻译： 提供一种通过防止熔融铝的表面被氧化而使其氧化物还原的铝锭的制造方法。 根据本发明的方法包括将铝基金属熔化成熔融铝或熔融铝合金的熔融步骤（熔化炉1）; 保持所得熔融铝或熔融铝合金的保持步骤（保持炉2）; 从熔融铝或熔融铝合金中除去氢气的脱氢工序（脱氢装置3） 从熔融铝或熔融铝合金中去除夹杂物的过滤步骤（过滤器4）; 以及将熔融铝或熔融铝合金固化成预定形状的铸造步骤（铸造装置5），其中至少一个上述步骤在含有氟化气体，二氧化碳气体和氮气的保护气体的气氛中进行 和/或氩气。

公开(公告)号：US06946095B2

公开(公告)日：2005-09-20

申请号：US09876021

申请日：2001-06-08

申请人： Masakatsu Yokota ,  Kenji Osumi ,  Yutaka Nagakura

发明人： Masakatsu Yokota ,  Kenji Osumi ,  Yutaka Nagakura

IPC分类号： C22B9/02 ,  C22B21/06 ,  C22B15/00

CPC分类号： C22B21/066 ,  C22B9/023 ,  Y02P10/234

摘要： The invention provides an internal filter with an improved filtering ability of removing particularly fine inclusion particles from molten aluminum or molten aluminum alloy. The internal filter includes an aggregate meshed member made of a refractory material and a coating layer formed on a surface of the aggregate meshed member. The coating layer contains a soda silicate that is able to be softened or viscous at a temperature of the molten aluminum alloy.

摘要翻译： 本发明提供了一种内部过滤器，其具有从熔融铝或熔融铝合金中除去特别细小的夹杂物颗粒的过滤能力。 内部过滤器包括由耐火材料制成的骨料网构件和形成在骨料网构件的表面上的涂层。 涂层含有能够在熔融铝合金的温度下软化或粘稠的硅酸钠。

公开(公告)号：US06881295B2

公开(公告)日：2005-04-19

申请号：US09819516

申请日：2001-03-27

申请人： Yutaka Nagakura

发明人： Yutaka Nagakura

IPC分类号： H01L21/205 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  F27B5/16 ,  F27D7/02 ,  H01L21/22 ,  H01L21/31 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45563 ,  C23C16/401 ,  C23C16/455 ,  C23C16/45578

摘要： A reactor of a chemical vapor deposition system is equipped with a gas feeder for blowing dopant gas to plural semiconductor wafers supported by a wafer boat at intervals, and the gas feeder has a gas passage gradually reduced in cross section and gas outlet holes equal in diameter and arranged along the wafer boat for keeping the doping gas concentration substantially constant around the semiconductor wafers, whereby the dopant is uniformly introduced in material deposited on all the semiconductor wafers.

摘要翻译： 化学气相沉积系统的反应器配备有气体供给器，用于间歇地将掺杂气体吹送到由晶片舟板支撑的多个半导体晶片，并且气体进料器具有横截面逐渐减小的气体通道和直径相等的气体出口孔 并且沿着晶片舟布置以保持掺杂气体浓度在半导体晶片周围基本恒定，由此掺杂剂均匀地引入沉积在所有半导体晶片上的材料中。

公开(公告)号：US20080176407A1

公开(公告)日：2008-07-24

申请号：US12010287

申请日：2008-01-23

申请人： Yutaka Nagakura

发明人： Yutaka Nagakura

IPC分类号： H01L21/311

CPC分类号： H01L21/31133 ,  G03F7/42 ,  H01L21/67028

摘要： A semiconductor device manufacturing method includes: a step of implementing etching onto a film formed on a semiconductor wafer; and a removal step of supplying, after etching, a removing solution for removing deposition on the film to a semiconductor wafer in the state where the number of rotations thereof is smaller than a predetermined number of rotations thereafter to rotate the semiconductor wafer at a higher number of rotations, which is greater than the predetermined number of rotations. In this method, the time during which removing solution is supplied is 45 sec. or less. This method includes a sequence in which removal step is executed twice or more.

摘要翻译： 半导体器件制造方法包括：对形成在半导体晶片上的膜进行蚀刻的步骤; 以及去除步骤，在蚀刻之后，在其转数小于预定转数的状态下，将半导体晶片的数量更多地转移到半导体晶片上之后，将去除膜上的沉积物的去除溶液提供到半导体晶片 的转速大于预定转速。 在该方法中，提供去除溶液的时间为45秒。 或更少。 该方法包括执行两次或更多次移除步骤的序列。