公开(公告)号：US20130056739A1

公开(公告)日：2013-03-07

申请号：US13664852

申请日：2012-10-31

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

IPC分类号： H01L29/786

CPC分类号： H01L29/66765 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1288

摘要： A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.

摘要翻译： TFT阵列基板及其制造方法，其中，TFT阵列基板包括基板; 栅极线和栅极电极，其被栅极绝缘层，半导体层和欧姆接触层依次覆盖。 在所得到的衬底上以及栅极线和栅电极，栅极绝缘层，半导体层和欧姆接触层的两侧上形成绝缘层。 然后在欧姆接触层中形成沟槽，以将半导体层上的欧姆接触层分开。 然后在绝缘层和欧姆接触层上形成数据线和第一和第二源极/漏极。

公开(公告)号：US20080061295A1

公开(公告)日：2008-03-13

申请号：US11853297

申请日：2007-09-11

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/124

摘要： A TFT-LCD array substrate and a method for manufacturing the same are disclosed. In the TFT-LCD array substrate, a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on the source region and the drain region of the semiconductor layer and exposes the channel; a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region; the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer; a passivation layer is formed on the TFT, the gate line, and the data line and exposes the pixel electrode.

摘要翻译： 公开了TFT-LCD阵列基板及其制造方法。 在TFT-LCD阵列基板中，在栅极线和栅电极上依次形成第一绝缘层，半导体层和欧姆接触层，并且欧姆接触层形成在源极区和漏极区 半导体层并暴露通道; 在基板上形成第二绝缘层，覆盖栅极线和栅电极的侧壁，第一绝缘层，半导体层和欧姆接触层，并使源极区和漏极区中的欧姆接触层露出 ; 数据线，源电极，像素电极和漏电极形成在第二绝缘层上; 在TFT，栅极线和数据线上形成钝化层，并使像素电极露出。

公开(公告)号：US20080030639A1

公开(公告)日：2008-02-07

申请号：US11834118

申请日：2007-08-06

申请人： Haijun Qiu ,  Zhangtao Wang ,  Xu Chen ,  Tae Yup Min

发明人： Haijun Qiu ,  Zhangtao Wang ,  Xu Chen ,  Tae Yup Min

IPC分类号： G02F1/136 ,  H01L21/77

CPC分类号： H01L27/1288 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/1214

摘要： A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.

摘要翻译： 公开了一种TFT-LCD阵列基板的像素单元及其制造方法。 在该制造方法中，除了第一绝缘层和钝化层之外，还采用第二绝缘层覆盖栅极岛，并且在栅极岛上形成开口，以露出沟道区，源极区和漏极区 TFT。 利用灰度色调掩模和光致抗蚀剂剥离工艺进行图案化，从而可以用三个掩模实现TFT-LCD阵列基板。

公开(公告)号：US08324033B2

公开(公告)日：2012-12-04

申请号：US11958613

申请日：2007-12-18

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

IPC分类号： H01L21/00

CPC分类号： H01L29/66765 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1288

摘要： A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.

摘要翻译： TFT阵列基板及其制造方法，其中，TFT阵列基板包括基板; 栅极线和栅极电极，其被栅极绝缘层，半导体层和欧姆接触层依次覆盖。 在所得到的衬底上以及栅极线和栅电极，栅绝缘层，半导体层和欧姆接触层的两侧上形成绝缘层。 然后在欧姆接触层中形成沟槽，以将半导体层上的欧姆接触层分开。 然后在绝缘层和欧姆接触层上形成数据线和第一和第二源极/漏极。

公开(公告)号：US07948570B2

公开(公告)日：2011-05-24

申请号：US12270206

申请日：2008-11-13

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min

IPC分类号： G02F1/136

CPC分类号： H01L27/124 ,  G02F1/1368 ,  G02F2001/136236 ,  H01L27/1288

摘要： A thin film transistor (TFT) array substrate for a liquid crystal display comprises a gate line and a data line formed in a display region, a gate connecting line and a data connecting line formed in a PAD region, and a TFT formed at an intersection between the gate line and the data line. The TFT comprises a gate electrode on a base substrate, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, a doped semiconductor layer on the semiconductor layer, and a source electrode and a drain electrode that are on the doped semiconductor layer, and a TFT channel is defined in the semiconductor layer between the source electrode and the drain electrode. The array substrate further comprises a passivation layer that is formed on the source electrode and the drain electrode and a pixel electrode, a portion of which is formed under the drain electrode and connected with the drain electrode.

摘要翻译： 用于液晶显示器的薄膜晶体管（TFT）阵列基板包括形成在PAD区域中的显示区域，栅极连接线和数据连接线上形成的栅极线和数据线，以及形成在交叉点处的TFT 在栅极线和数据线之间。 TFT包括在基底基板上的栅极电极，栅电极上的栅极绝缘层，栅极绝缘层上的半导体层，半导体层上的掺杂半导体层，以及源电极和漏电极 掺杂半导体层，并且在源电极和漏电极之间的半导体层中限定TFT沟道。 阵列基板还包括形成在源电极和漏电极上的钝化层和像素电极，其一部分形成在漏电极下方并与漏电极连接。

公开(公告)号：US20100270556A1

公开(公告)日：2010-10-28

申请号：US12830831

申请日：2010-07-06

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

IPC分类号： H01L33/08 ,  H01L21/28

CPC分类号： H01L27/1248 ,  H01L27/1288

摘要： A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.

摘要翻译： 一种TFT LCD阵列基板及其制造方法。 TFT LCD阵列基板包括基板。 在基板上形成与栅极线一体形成的栅极线和栅电极。 在栅极线和栅电极上依次形成第一绝缘层和半导体层。 第二绝缘层覆盖栅极线和栅电极，第一绝缘层和半导体层的侧壁。 在半导体层上形成蚀刻停止层，在蚀刻停止层的两侧露出半导体层的一部分。 本发明的TFT LCD可以用四掩模工艺制造。

公开(公告)号：US20120034722A1

公开(公告)日：2012-02-09

申请号：US13273460

申请日：2011-10-14

申请人： Haijun Qiu ,  Zhangtao Wang ,  Xu Chen ,  Tae Yup Min

发明人： Haijun Qiu ,  Zhangtao Wang ,  Xu Chen ,  Tae Yup Min

IPC分类号： H01L33/16 ,  H01L21/336

CPC分类号： H01L27/1288 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/1214

摘要： A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.

摘要翻译： 公开了一种TFT-LCD阵列基板的像素单元及其制造方法。 在该制造方法中，除了第一绝缘层和钝化层之外，还采用第二绝缘层覆盖栅极岛，并且在栅极岛上形成开口，以露出沟道区域，源极区域和漏极区域 TFT。 利用灰度色调掩模和光致抗蚀剂剥离工艺进行图案化，从而可以用三个掩模实现TFT-LCD阵列基板。

公开(公告)号：US07687330B2

公开(公告)日：2010-03-30

申请号：US12270008

申请日：2008-11-13

申请人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min

发明人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  G02F2001/133357 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13625 ,  H01L27/1214

摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel structure comprising: a gate line and a gate electrode formed on a substrate; a first insulating layer, a semiconductor layer, and a doped semiconductor layer formed sequentially on the gate electrode and the gate line, wherein an isolating groove is formed above the gate line which disconnects the semiconductor layer on the gate line; a second insulating layer covering the isolating groove and a portion of the substrate where the gate line and the gate are not formed; a pixel electrode formed on the second insulating layer, wherein the pixel electrode is integral with a drain electrode and is connected with the doped semiconductor layer on the gate electrode at a place where the drain electrode is formed; a source electrode, which is a portion of a data line, formed on the doped semiconductor layer; and a channel formed between the source electrode and the drain electrode.

摘要翻译： 一种薄膜晶体管液晶显示器（TFT-LCD）像素结构，包括：栅极线和形成在衬底上的栅电极; 在栅电极和栅极线上依次形成第一绝缘层，半导体层和掺杂半导体层，其中在栅极线上方形成隔离槽，该栅极线与栅极线上的半导体层断开; 覆盖隔离槽的第二绝缘层和不形成栅极线和栅极的衬底的一部分; 形成在所述第二绝缘层上的像素电极，其中所述像素电极与漏电极成一体，并且在形成所述漏电极的位置处与所述栅电极上的所述掺杂半导体层连接; 源极，其是形成在所述掺杂半导体层上的数据线的一部分; 以及形成在源电极和漏极之间的沟道。

公开(公告)号：US20080142802A1

公开(公告)日：2008-06-19

申请号：US11952252

申请日：2007-12-07

申请人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min ,  Xu Chen

发明人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min ,  Xu Chen

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1288

摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer that are sequentially formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and a part of the pixel electrode overlaps one of a source and drain electrodes.

摘要翻译： 薄膜晶体管液晶显示器（TFT-LCD）像素单元及其制造方法。 像素单元包括形成在基板上的栅极线和栅电极以及依次形成在栅极线和栅电极上的第一栅极绝缘层，有源层和掺杂层。 在栅极线上形成截止沟槽以切断栅极线上的掺杂层和有源层。 第二绝缘层覆盖不形成栅极线和栅电极的截止沟槽和衬底。 像素电极形成在第二绝缘层上，并且像素电极的一部分与源极和漏极之一重叠。

公开(公告)号：US20080105873A1

公开(公告)日：2008-05-08

申请号：US11935002

申请日：2007-11-05

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1248 ,  H01L27/1288

摘要： A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.

摘要翻译： 一种TFT LCD阵列基板及其制造方法。 TFT LCD阵列基板包括基板。 在基板上形成与栅极线一体形成的栅极线和栅电极。 在栅极线和栅电极上依次形成第一绝缘层和半导体层。 第二绝缘层覆盖栅极线和栅电极，第一绝缘层和半导体层的侧壁。 在半导体层上形成蚀刻停止层，在蚀刻停止层的两侧露出半导体层的一部分。 本发明的TFT LCD可以用四掩模工艺制造。