Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same
    3.
    发明授权
    Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same 有权
    等离子体增强型电磁辐射发射装置及其制造方法

    公开(公告)号:US07781853B2

    公开(公告)日:2010-08-24

    申请号:US11881266

    申请日:2007-07-26

    摘要: Various embodiments of the present invention are directed to surface-plasmon-enhanced electromagnetic-radiation-emitting devices and to methods of fabricating these devices. In one embodiment of the present invention, an electromagnetic-radiation-emitting device comprises a multilayer core, a metallic device layer, and a substrate. The multilayer core has an inner layer and an outer layer, wherein the outer layer is configured to surround at least a portion of the inner layer. The metallic device layer is configured to surround at least a portion of the outer layer. The substrate has a bottom conducting layer in electrical communication with the inner layer and a top conducting layer in electrical communication with the metallic device layer such that the exposed portion emits surface-plasmon-enhanced electromagnetic radiation when an appropriate voltage is applied between the bottom conducting layer and the top conducting layer.

    摘要翻译: 本发明的各种实施例涉及表面等离子体增强的电磁辐射发射装置以及制造这些装置的方法。 在本发明的一个实施例中,电磁辐射发射装置包括多层芯,金属器件层和衬底。 多层芯具有内层和外层,其中外层被构造成围绕内层的至少一部分。 金属器件层被配置为围绕外层的至少一部分。 衬底具有与内层电连通的底部导电层和与金属器件层电连通的顶部导电层,使得当在底部导电之间施加适当的电压时,暴露部分发射表面等离子体增强的电磁辐射 层和顶部导电层。

    Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same
    4.
    发明申请
    Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same 有权
    等离子体增强型电磁辐射发射装置及其制造方法

    公开(公告)号:US20090028493A1

    公开(公告)日:2009-01-29

    申请号:US11881266

    申请日:2007-07-26

    IPC分类号: G02B6/12 H01L33/00 H01L21/00

    摘要: Various embodiments of the present invention are directed to surface-plasmon-enhanced electromagnetic-radiation-emitting devices and to methods of fabricating these devices. In one embodiment of the present invention, an electromagnetic-radiation-emitting device comprises a multilayer core, a metallic device layer, and a substrate. The multilayer core has an inner layer and an outer layer, wherein the outer layer is configured to surround at least a portion of the inner layer. The metallic device layer is configured to surround at least a portion of the outer layer. The substrate has a bottom conducting layer in electrical communication with the inner layer and a top conducting layer in electrical communication with the metallic device layer such that the exposed portion emits surface-plasmon-enhanced electromagnetic radiation when an appropriate voltage is applied between the bottom conducting layer and the top conducting layer.

    摘要翻译: 本发明的各种实施例涉及表面等离子体增强的电磁辐射发射装置以及制造这些装置的方法。 在本发明的一个实施例中,电磁辐射发射装置包括多层芯,金属器件层和衬底。 多层芯具有内层和外层,其中外层被构造成围绕内层的至少一部分。 金属器件层被配置为围绕外层的至少一部分。 衬底具有与内层电连通的底部导电层和与金属器件层电连通的顶部导电层,使得当在底部导电之间施加适当的电压时,暴露部分发射表面等离子体增强的电磁辐射 层和顶部导电层。

    PHOTONIC DEVICE AND METHOD OF MAKING THE SAME
    9.
    发明申请
    PHOTONIC DEVICE AND METHOD OF MAKING THE SAME 失效
    光电装置及其制造方法

    公开(公告)号:US20120032168A1

    公开(公告)日:2012-02-09

    申请号:US13258404

    申请日:2009-04-30

    IPC分类号: H01L31/0368 H01L31/18

    摘要: A photonic device (200) and method (100) of making the photonic device (200) employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (210). The method (100) includes growing (110) the polycrystalline layer (210) on a substrate (201). The polycrystalline layer includes a transition region (212) of variously oriented grains and a region (214) of columnar grain boundaries (215) adjacent to the transition region. The method further includes preferentially etching (120) the colunmar grain boundaries to provide tapered structures (220) of the semiconductor material that are continuous (217) with respective aligned grains (213) of the transition region. The tapered structures are predominantly single crystal. The method further includes forming (140) a conformal semiconductor junction (240) on the tapered structures and providing (160) first and second electrodes. The first electrode (201, 262) is adjacent to the transition region and the second electrode (260) is adjacent to a surface layer of the conformal semiconductor junction.

    摘要翻译: 制造光子器件(200)的光子器件(200)和方法(100)采用对多晶半导体材料层(210)的晶界的优先蚀刻。 方法(100)包括在衬底(201)上生长(110)多晶层(210)。 多晶层包括不同取向晶粒的过渡区域(212)和与过渡区域相邻的柱状晶界(215)的区域(214)。 该方法还包括优先蚀刻(120)晶体晶粒边界以提供与过渡区域的相应对准晶粒(213)连续(217)的半导体材料的锥形结构(220)。 锥形结构主要是单晶。 该方法还包括在锥形结构上形成(140)共形半导体结(240)并提供(160)第一和第二电极。 第一电极(201,262)与过渡区域相邻,第二电极(260)与保形半导体结的表面层相邻。