摘要:
Provided are methods for growing large-size, uniform graphene layers on planarized substrates using Chemical Vapor Deposition (CVD) at atmospheric pressure; graphene produced according to these methods may have a single layer content exceeding 95%. Field effect transistors fabricated by the inventive process have room temperature hole mobilities that are a factor of 2-5 larger than those measured for samples grown on commercially-available copper foil substrates.
摘要:
Disclosed are graphene oxide membrane materials of high surface area, which membranes suitably have a surface area of above about 200 μm and exhibit electrical conductivity in excess of about 200 S/m. Also provided are methods of synthesizing such membranes, as well as devices and sensors that incorporate these novel grapheme materials.
摘要:
Provided are methods for growing large-size, uniform graphene layers on planarized substrates using Chemical Vapor Deposition (CVD) at atmospheric pressure; graphene produced according to these methods may have a single layer content exceeding 95%. Field effect transistors fabricated by the inventive process have room temperature hole mobilities that are a factor of 2-5 larger than those measured for samples grown on commercially-available copper foil substrates.
摘要:
Disclosed are graphene oxide membrane materials of high surface area, which membranes suitably have a surface area of above about 200 μm and exhibit electrical conductivity in excess of about 200 S/m. Also provided are methods of synthesizing such membranes, as well as devices and sensors that incorporate these novel grapheme materials.