公开(公告)号：US06469939B1

公开(公告)日：2002-10-22

申请号：US09969572

申请日：2001-10-01

申请人： Zhigang Wang ,  Richard Fastow ,  Sheung-Hee Park ,  Sameer S. Haddad ,  Chi Chang

发明人： Zhigang Wang ,  Richard Fastow ,  Sheung-Hee Park ,  Sameer S. Haddad ,  Chi Chang

IPC分类号： G11C1604

CPC分类号： G11C16/3409 ,  G11C16/10 ,  G11C16/12 ,  G11C16/3404

摘要： A source resistor or a positive voltage is coupled to the source and a negative bias voltage is applied at the substrate or p-well of flash memory cells for enhanced efficiency during programming and/or during an APDE (Automatic Program Disturb after Erase) process for a flash memory device. Furthermore, in a system and method for programming the flash memory device, a flash memory cell of the array of multiple flash memory cells is selected to be programmed. A control gate programming voltage is applied to the control gate of the selected flash memory cell, and a bit line programming voltage is applied to the drain of the selected flash memory cell via the common bit line terminal to which the drain of the selected flash memory cell is connected.

摘要翻译： 源极电阻或正电压耦合到源极，并且在闪存单元的衬底或p阱处施加负偏置电压，以在编程期间和/或在APDE（擦除后自动程序干扰）处理期间提高效率 闪存设备。 此外，在用于对闪速存储器件进行编程的系统和方法中，选择多个闪速存储器单元的阵列中的闪存单元进行编程。 控制栅极编程电压被施加到所选择的闪速存储器单元的控制栅极，并且位线编程电压通过公共位线端子被施加到所选择的闪存单元的漏极，所述公共位线端子选择闪存的漏极 单元格已连接。

公开(公告)号：US06754109B1

公开(公告)日：2004-06-22

申请号：US10282847

申请日：2002-10-29

申请人： Richard Fastow ,  Sameer Haddad ,  Zhigang Wang ,  Sheung-Hee Park

发明人： Richard Fastow ,  Sameer Haddad ,  Zhigang Wang ,  Sheung-Hee Park

IPC分类号： G11C1604

CPC分类号： G11C16/10 ,  G11C16/0483

摘要： In the present method of programming a selected flash EEPROM memory cell of a pair thereof in series, a positive voltage is applied to the drain of the selected cell to be programmed, a voltage lower than the voltage applied to the drain is applied to the source of the selected cell, a negative voltage is applied to the substrate, and a positive voltage is applied to the control gate sufficient to induce hot electron injection from the drain to the floating gate of the selected cell.

摘要翻译： 在本文对串联选择的一对闪存EEPROM存储单元进行编程的方法中，将正电压施加到要被编程的选定单元的漏极，低于施加到漏极的电压的电压施加到源极 ，向基板施加负电压，并且将正电压施加到控制栅极，足以引起从漏极到所选电池的浮置栅极的热电子注入。

公开(公告)号：US06252803B1

公开(公告)日：2001-06-26

申请号：US09692881

申请日：2000-10-23

申请人： Richard Fastow ,  Sameer S. Haddad ,  Lee E. Cleveland ,  Chi Chang

发明人： Richard Fastow ,  Sameer S. Haddad ,  Lee E. Cleveland ,  Chi Chang

IPC分类号： G11C1616

CPC分类号： G11C16/16

摘要： A method of erasing a flash electrically-erasable programmable read-only memory (EEPROM) device is provided which includes a plurality of memory cells. An erase pulse is applied to the plurality of memory cells. The plurality of memory cells is overerase verified and an overerase correction pulse is applied to the bitline to which the overerased memory cell is attached. This cycle is repeated until all cells verify as not being overerased. The plurality of memory cells is erase verified and another erase pulse is applied to the memory cells if there are undererased memory cells and the memory cells are again erase verified. This cycle is repeated until all cells verify as not being undererased. After erase verify is completed, the plurality of memory cells is soft program verified and a soft programming pulse is applied to the those memory cells in the plurality of memory cells which have a threshold voltage below a pre-defined minimum value. This cycle is repeated until all of those memory cells in the plurality of memory cells which have a threshold voltage below the pre-defined minimum value are brought above the pre-defined minimum value. The erase method is considered to be finished when there are no memory cells in the plurality of memory cells which have a threshold voltage below the pre-defined minimum value.

摘要翻译： 提供擦除闪存电可擦除可编程只读存储器（EEPROM）设备的方法，其包括多个存储器单元。 擦除脉冲被施加到多个存储单元。 多个存储器单元被过度验证，并且过高修正脉冲被施加到被过度存储的存储单元附着的位线。 重复此循环，直到所有的单元格都被验证为不被过高。 多个存储器单元被擦除验证，并且如果存在未存储的存储器单元并且存储器单元再次被擦除验证，则另一个擦除脉冲被施加到存储器单元。 重复此循环，直到所有单元格都被验证为不被忽略。 在擦除验证完成之后，多个存储器单元被软件程序验证，并且将软编程脉冲施加到具有低于预定义最小值的阈值电压的多个存储单元中的那些存储单元。 重复该循环，直到具有低于预定义最小值的阈值电压的多个存储器单元中的所有那些存储器单元高于预定义的最小值。 当多个存储单元中没有存储单元的阈值电压低于预先定义的最小值时，擦除方法被认为是完成的。

公开(公告)号：US06510085B1

公开(公告)日：2003-01-21

申请号：US09861031

申请日：2001-05-18

申请人： Richard Fastow ,  Sheunghee Park ,  Zhigang Wang ,  Sameer Haddad ,  Chi Chang

发明人： Richard Fastow ,  Sheunghee Park ,  Zhigang Wang ,  Sameer Haddad ,  Chi Chang

IPC分类号： G11C1604

CPC分类号： G11C16/3409 ,  G11C16/10 ,  G11C16/12 ,  G11C16/3404

摘要： Methods of programming and soft programming short channel NOR flash memory cells that reduce the programming currents and column leakages during both programming and soft programming while maintaining fast programming speeds. During programming, a voltage of between 7 and 10 volts is applied to the control gate, a voltage of between 4 and 6 volts; is applied to the drain, a voltage of between 0.5 and 2.0 volts is applied to the source and a voltage of between minus 2 and minus 0.5 volts is applied to the substrate of the selected cell to be programmed. During soft programming, a voltage of between 0.5 and 4.5 volts is applied to the control gates, between 4 and 5.5 volts is applied to the drains, between 0.5 and 2 volts is applied to the sources and between minus 2.0 and minus 0.5 volts is applied to the substrates of the memory cells.

摘要翻译： 编程和软编程短节目NOR闪存单元的方法，可在编程和软编程期间减少编程电流和列泄漏，同时保持快速的编程速度。 在编程期间，7至10伏之间的电压施加到控制栅极，电压在4和6伏之间; 施加到漏极，将0.5至2.0伏之间的电压施加到源极，并且在所述要编程的所选择的单元的衬底之间施加负2和负0.5伏之间的电压。 在软编程期间，向控制栅极施加0.5至4.5伏之间的电压，在漏极之间施加4至5.5伏之间的电压，施加0.5至2伏之间的电压，并施加负2.0至负0.5伏之间 到存储单元的基板。

公开(公告)号：US06400608B1

公开(公告)日：2002-06-04

申请号：US09842288

申请日：2001-04-25

申请人： Richard Fastow ,  Sameer S. Haddad ,  Lee E. Cleveland

发明人： Richard Fastow ,  Sameer S. Haddad ,  Lee E. Cleveland

IPC分类号： G11C1134

CPC分类号： G11C16/3422 ,  G11C16/344 ,  G11C16/3445

摘要： A technique is provided for reducing column leakage in a flash EEPROM device during an erase verification process, thereby preventing false verifies. The technique has application in NOR arrays or other types of arrays in which a number of cells are connected in parallel. The technique operates by reducing the leakage of the unselected cells in parallel to the selected cell being verified, thereby preventing false verifies. The technique can also be used in conjunction with other techniques for reducing column leakage, such as soft programming, automatic programming disturb erase (APDE), or various other Vth compacting schemes.

摘要翻译： 提供了一种在擦除验证过程中减少闪存EEPROM器件中的列泄漏的技术，从而防止虚假验证。 该技术在NOR阵列或其他类型的阵列中的应用，其中多个单元并联连接。 该技术通过减少未被选择的小区的泄漏与所验证的所选择的小区并行，从而防止虚假验证来进行操作。 该技术还可以与减少列泄漏的其他技术结合使用，例如软编程，自动编程干扰擦除（APDE）或各种其他Vth压缩方案。

公开(公告)号：US06294430B1

公开(公告)日：2001-09-25

申请号：US09495213

申请日：2000-01-31

申请人： Richard Fastow ,  Sameer S. Haddad ,  Daniel Sobek

发明人： Richard Fastow ,  Sameer S. Haddad ,  Daniel Sobek

IPC分类号： H01L21336

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L21/3144 ,  H01L29/511 ,  H01L29/7883 ,  Y10S438/923

摘要： A flash memory device and a method of manufacturing the flash memory device having high reliability in which a gate stack is formed on a tunnel oxide formed on a substrate and a layer of oxide is formed on the surfaces of the gate stack and exposed surfaces of the substrate. Nitrogen is diffused into the layer of oxide.

摘要翻译： 闪存器件和制造具有高可靠性的闪速存储器件的方法，其中栅极堆叠形成在形成在衬底上的隧道氧化物上，并且氧化物层形成在栅极堆叠的表面上， 基质。 氮气扩散到氧化物层中。

公开(公告)号：US06911704B2

公开(公告)日：2005-06-28

申请号：US10685044

申请日：2003-10-14

申请人： Mark W. Randolph ,  Sameer S. Haddad ,  Timothy Thurgate ,  Richard Fastow

发明人： Mark W. Randolph ,  Sameer S. Haddad ,  Timothy Thurgate ,  Richard Fastow

IPC分类号： G11C16/04 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/115 ,  H01L27/082

CPC分类号： H01L27/11568 ,  G11C16/0483 ,  H01L27/115 ,  H01L27/11521

摘要： A memory cell array comprises a two dimensional array of memory cells fabricated on a semiconductor substrate. The memory cells are arranged in a plurality of rows and a plurality columns. Each column of memory cells comprising a plurality of alternating channel regions and source/drain regions. A conductive interconnect is positioned above each source/drain region and coupled to only one other source/drain region. The one other source/drain region is in a second column that is adjacent to the column. The conductive interconnects are positioned such that every other conductive interconnect connects to the adjacent column to a right side of the column and every other conductive interconnect connects to adjacent column to the left side of the column. A plurality of source/drain control lines extends between adjacent columns of memory cells and electrically couples to each conductive interconnect that couples between the adjacent columns.

公开(公告)号：US06438037B1

公开(公告)日：2002-08-20

申请号：US09851773

申请日：2001-05-09

申请人： Richard Fastow ,  Xin Guo ,  Sameer S. Haddad

发明人： Richard Fastow ,  Xin Guo ,  Sameer S. Haddad

IPC分类号： G11C1606

CPC分类号： G11C16/3409 ,  G11C16/3404

摘要： A flash memory design with a compact threshold voltage distribution and a method for compacting the threshold voltage for a flash memory design in which the threshold voltage is compacted by erasing a plurality of memory cells to set the threshold voltage for the memory cells substantially towards a median erased threshold voltage; verifying at least one fast-erase memory cell; selectively soft-programming the memory cells; and erasing subsequent to selectively soft-programming.

摘要翻译： 具有紧凑阈值电压分布的快闪存储器设计和用于压缩闪速存储器设计的阈值电压的方法，其中阈值电压通过擦除多个存储器单元而被压缩，以将存储器单元的阈值电压基本上朝向中位数 擦除阈值电压; 验证至少一个快速擦除存储器单元; 选择性地软编程存储器单元; 并且在选择性软编程之后擦除。

公开(公告)号：US06781885B1

公开(公告)日：2004-08-24

申请号：US10379885

申请日：2003-03-05

申请人： Sheung Hee Park ,  Richard Fastow ,  Wing Han Leung

发明人： Sheung Hee Park ,  Richard Fastow ,  Wing Han Leung

IPC分类号： G11C1134

CPC分类号： G11C16/10 ,  G11C16/12 ,  G11C16/3454

摘要： In programming the threshold voltage of a memory cell transistor having a substrate, a gate insulator on the substrate, a floating gate on the gate insulator, an insulating layer on the floating gate, and a control gate on the insulating layer, and a source and drain in the substrate, a voltage difference is applied between the drain and source of the transistor and negative voltage is applied to the substrate of the transistor. An increasing voltage is applied to the control gate of the transistor, and, during application of that increasing voltage, a succession of verification tests are undertaken at a corresponding succession of times separated by chosen time intervals to verify if the transistor has been programmed to a chosen threshold voltage.

摘要翻译： 在对具有衬底的存储单元晶体管的阈值电压进行编程时，衬底上的栅极绝缘体，栅极绝缘体上的浮置栅极，浮置栅极上的绝缘层和绝缘层上的控制栅极，以及源极和 在晶体管的漏极和源极之间施加电压差，并且将负电压施加到晶体管的衬底。 增加的电压被施加到晶体管的控制栅极，并且在施加该增加的电压期间，以相应的连续次数进行一系列验证测试，所述时间间隔被选定的时间间隔以验证晶体管是否被编程为 选择阈值电压。

公开(公告)号：US06452840B1

公开(公告)日：2002-09-17

申请号：US09693649

申请日：2000-10-21

申请人： Ravi S. Sunkavalli ,  Lee Cleveland ,  Sameer S. Haddad ,  Richard Fastow ,  Tim Thurgate

发明人： Ravi S. Sunkavalli ,  Lee Cleveland ,  Sameer S. Haddad ,  Richard Fastow ,  Tim Thurgate

IPC分类号： G11C1604

CPC分类号： G11C16/3477 ,  G11C16/344 ,  G11C16/3445 ,  G11C16/3472

摘要： A method of erasing a flash memory device that improves reliability and reduces the decrease in erase speed. The state of erasure is determined either during an erase phase or a verify phase and the information is fedback to a controller that adjusts the erase vertical electrical field that is to be applied to the array. The vertical electrical field is adjusted by changing the gate voltage, the well voltage or changing both simultaneously.

摘要翻译： 一种擦除闪速存储器件的方法，其提高可靠性并减少擦除速度的降低。 在擦除阶段或验证阶段期间确定擦除状态，并将信息反馈到调整要应用于阵列的擦除垂直电场的控制器。 通过改变栅极电压，井电压或同时改变两者来调节垂直电场。