公开(公告)号：US20080142483A1

公开(公告)日：2008-06-19

申请号：US11947619

申请日：2007-11-29

申请人： Zhong Qiang Hua ,  Rionard Purnawan ,  Jason Thomas Bloking ,  Anchuan Wang ,  Young S. Lee ,  Ellie Y. Yieh

发明人： Zhong Qiang Hua ,  Rionard Purnawan ,  Jason Thomas Bloking ,  Anchuan Wang ,  Young S. Lee ,  Ellie Y. Yieh

IPC分类号： B44C1/22

CPC分类号： C23C16/401 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/3145 ,  H01L21/31612

摘要： A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH3 and NF3. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.

摘要翻译： 描述了使用高密度等离子体在衬底间隙中形成电介质材料的方法。 该方法可以包括将电介质材料的第一部分沉积到具有高密度等离子体的间隙中。 沉积可以形成至少部分地阻挡介电材料沉积到间隙中的突出结构。 电介质材料的第一部分暴露于包括来自包括NH 3和N N 3 3的混合物的反应物质的蚀刻剂。 蚀刻剂形成具有突出结构的固体反应产物，并且固体反应产物可以从基底上除去。 介电材料的最终部分可以与高密度等离子体在间隙中沉积。

公开(公告)号：US07704897B2

公开(公告)日：2010-04-27

申请号：US12035603

申请日：2008-02-22

申请人： Hemant P. Mungekar ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： Hemant P. Mungekar ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/316

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

公开(公告)号：US20090215281A1

公开(公告)日：2009-08-27

申请号：US12035603

申请日：2008-02-22

申请人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/469 ,  H01L21/00 ,  H05H1/24

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。