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    MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS
    1.
    发明申请
    MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS 审中-公开
    多级DEP-ETCH-DEP高密度等离子体化学气相沉积工艺用于电介质

    公开(公告)号：US20080142483A1

    公开(公告)日：2008-06-19

    申请号：US11947619

    申请日：2007-11-29

    申请人： Zhong Qiang Hua ,  Rionard Purnawan ,  Jason Thomas Bloking ,  Anchuan Wang ,  Young S. Lee ,  Ellie Y. Yieh

    发明人： Zhong Qiang Hua ,  Rionard Purnawan ,  Jason Thomas Bloking ,  Anchuan Wang ,  Young S. Lee ,  Ellie Y. Yieh

    IPC分类号： B44C1/22

    CPC分类号： C23C16/401 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/3145 ,  H01L21/31612

    摘要： A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH3 and NF3. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.

    摘要翻译： 描述了使用高密度等离子体在衬底间隙中形成电介质材料的方法。 该方法可以包括将电介质材料的第一部分沉积到具有高密度等离子体的间隙中。 沉积可以形成至少部分地阻挡介电材料沉积到间隙中的突出结构。 电介质材料的第一部分暴露于包括来自包括NH 3和N N 3 3的混合物的反应物质的蚀刻剂。 蚀刻剂形成具有突出结构的固体反应产物，并且固体反应产物可以从基底上除去。 介电材料的最终部分可以与高密度等离子体在间隙中沉积。

    Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
    2.
    发明授权
    Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD 失效
    集成过程调制（IPM）是HDP-CVD填缝的新解决方案

    公开(公告)号：US07524750B2

    公开(公告)日：2009-04-28

    申请号：US11553772

    申请日：2006-10-27

    申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    IPC分类号： H01L21/20

    CPC分类号： H01L21/76224

    摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

    摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成具有至少1011个离子/ cm 3的离子密度的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

    INTEGRATED PROCESS MODULATION (IPM) A NOVEL SOLUTION FOR GAPFILL WITH HDP-CVD
    3.
    发明申请
    INTEGRATED PROCESS MODULATION (IPM) A NOVEL SOLUTION FOR GAPFILL WITH HDP-CVD 失效
    集成过程调制（IPM）用于HDP-CVD的GAPFILL的新颖解决方案

    公开(公告)号：US20070243693A1

    公开(公告)日：2007-10-18

    申请号：US11553772

    申请日：2006-10-27

    申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76224

    摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

    摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

    Remote plasma clean process with cycled high and low pressure clean steps
    4.
    发明授权
    Remote plasma clean process with cycled high and low pressure clean steps 失效
    远程等离子清洁工艺，循环高低压清洁步骤

    公开(公告)号：US07967913B2

    公开(公告)日：2011-06-28

    申请号：US12508381

    申请日：2009-07-23

    申请人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

    发明人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

    IPC分类号： B08B6/00

    CPC分类号： B08B7/0035 ,  C23C16/4405

    摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

    摘要翻译： 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。 在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。 产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

    REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS
    5.
    发明申请
    REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 失效
    具有循环高低压清洁步骤的远程等离子清洁工艺

    公开(公告)号：US20100095979A1

    公开(公告)日：2010-04-22

    申请号：US12508381

    申请日：2009-07-23

    申请人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

    发明人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

    IPC分类号： B08B7/00

    CPC分类号： B08B7/0035 ,  C23C16/4405

    摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

    摘要翻译： 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。 在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。 产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

    Internal balanced coil for inductively coupled high density plasma processing chamber
    6.
    发明授权
    Internal balanced coil for inductively coupled high density plasma processing chamber 有权
    用于电感耦合高密度等离子体处理室的内部平衡线圈

    公开(公告)号：US07789993B2

    公开(公告)日：2010-09-07

    申请号：US11670662

    申请日：2007-02-02

    申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/321

    摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

    摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER
    9.
    发明申请
    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER 有权
    用于感应耦合高密度等离子体加工室的内部平衡线圈

    公开(公告)号：US20080185284A1

    公开(公告)日：2008-08-07

    申请号：US11670662

    申请日：2007-02-02

    申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    IPC分类号： H01L21/3065 ,  C23C16/00 ,  H05F3/00

    CPC分类号： H01J37/321

    摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

    摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。