摘要:
Systems and methods for increasing media absorption efficiency using interferometric waveguides in information storage devices are described. One such system for an interferometric waveguide assembly includes a light source, a first waveguide arm and a second waveguide arm, a splitter configured to receive light from the light source and to split the light into the first waveguide arm and the second waveguide arm, and a near field transducer (NFT) configured to receive the light from the first waveguide arm and the second waveguide arm, where the first waveguide arm and the second waveguide arm converge to form a preselected angle at a junction about opposite the splitter, and where the first waveguide arm and the second waveguide arm are configured to induce a preselected phase difference in the light arriving at the NFT.
摘要:
An energy assisted magnetic recording (EAMR) transducer coupled with a laser is described. The EAMR transducer has an air-bearing surface (ABS) residing near a media during use. The laser provides energy. The transducer includes a waveguide, a near field transducer (NFT) proximate to the ABS, a write pole, a heat spreader, and at least one coil. The waveguide directs the energy from the laser toward the ABS. The NFT is optically coupled with the waveguide, focuses the energy onto the media, and includes a disk having an NFT width. The write pole writes to the media. The heat spreader is thermally coupled with the NFT. A first portion of the heat spreader is between the NFT and the pole, is between the ABS and a second portion of the heat spreader, and has a first width. The second portion has a second width greater than the first width.
摘要:
Embodiments of the present invention relate to reducing the size variation on a wafer fabrication. In some embodiments, at least a portion the backfill material over features larger than a threshold size is etched or milled to provide backfill protrusions over those features. The backfill protrusions are configured to reduce the size variation across the fabrication. Embodiments of the invention may be used in fabrication of many types of devices, such as tapered wave guides (TWG), near-field transducers (NFT), MEMS devices, EAMR optical devices, optical structures, bio-optical devices, micro-fluidic devices, and magnetic writers.
摘要:
A magnetic transducer having an air-bearing surface (ABS) is described. The magnetic transducer includes a pole and at least one coil for energizing the pole. The pole has a pole tip proximate to the ABS, a yoke distal from the ABS, and a bottom surface including a bottom bevel. At least the yoke includes at least one sidewall having a first angle and a second angle. The first angle is between the bottom surface and the at least one sidewall. The second angle is a constant distance along the at least one sidewall from the first angle.
摘要:
A method for implementing communication services includes: after receiving a call request, determining whether a user subscribes to an IP Centrex service and an intelligent network (IN) service according to the obtained subscription information of the user; if the user subscribes to the IP Centrex service and IN service, checking with an application server (AS) whether the call request is for an intra-group call; if the call request is for an intra-group call, performing corresponding service processing according to the checking result to implement discount charging on the intra-group call. By using the method of the present invention, if the user subscribes to the IP Centrex service and the IN service, no conflict occurs between the IP Centrex service and the IN service, and discount charging is implemented on the intra-group call. A network device and a mobile communication system are also provided.
摘要:
A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译:用于偏置磁读头内的MR传感器中的自由层的硬偏置(HB)结构包括具有大的负磁致伸缩(λS S S S S)值的主偏置层。 研磨后装置中的压缩应力引起强的面内各向异性,其有效地提供纵向偏压以稳定传感器。 主偏置层形成在两个FM层之间,并且至少一个AFM层设置在上FM层上方或下FM层的下方。 另外,可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。 与传统的邻接结交换偏置设计相比,本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度,并显着降低旁瓣发生。 此外,由于主偏置层用作侧屏蔽,所以实现了具有相似轨道宽度的较小MRWu。
摘要:
A method and an apparatus for processing release of connection resources are provided. The method includes: stopping transmitting a service message to a Mobile Switch Center (MSC) in a first preset duration after receiving a reset message transmitted by the MSC, and restoring transmission of the service message to the MSC after the first preset duration, where release of connection resources between a Base Station Controller (BSC) and the MSC is ensured to be completed in the first preset duration. Through the method and the apparatus for processing the release of the connection resources, after the MSC transmits the reset message, it is ensured that the services of other MSCs are not affected and also the connection corresponding to the MSC transmitting the reset message on the BSC is released, so new services are not affected accordingly, thereby improving Quality of Service (QoS) of the services.
摘要:
Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.
摘要:
A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译:用于偏置磁读头内的MR传感器中的自由层的硬偏置(HB)结构包括具有大的负磁致伸缩(λS S S S S)值的主偏置层。 研磨后装置中的压缩应力引起强的面内各向异性,其有效地提供纵向偏压以稳定传感器。 主偏置层形成在两个FM层之间,并且至少一个AFM层设置在上FM层上方或下FM层的下方。 另外,可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。 与传统的邻接结交换偏置设计相比,本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度,并显着降低旁瓣发生。 此外,由于主偏置层用作侧屏蔽,所以实现了具有相似轨道宽度的较小MRWu。
摘要:
A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.