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1.发明授权Method and system for thermally processing a plurality of wafer-shaped objects 有权用于热处理多个晶片形物体的方法和系统公开(公告)号：US07977258B2
公开(公告)日：2011-07-12
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译： 公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。 根据本公开，在热处理室中处理两个晶片的倍数。 热处理室与用于加热晶片的至少一个加热装置连通。 将晶片以面对面配置或背对背配置放置在热处理室中。
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2.发明申请Method and system for thermally processing a plurality of wafer-shaped objects 有权用于热处理多个晶片形物体的方法和系统公开(公告)号：US20080248657A1
公开(公告)日：2008-10-09
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译： 公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。 根据本公开，在热处理室中处理两个晶片的倍数。 热处理室与用于加热晶片的至少一个加热装置连通。 将晶片以面对面配置或背对背配置放置在热处理室中。
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3.发明申请Selective Reflectivity Process Chamber with Customized Wavelength Response and Method 有权具有定制波长响应和方法的选择性反射过程室公开(公告)号：US20100219174A1
公开(公告)日：2010-09-02
申请号：US12776845
申请日：2010-05-10
IPC分类号： F27D11/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译： 描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。 在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。 室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的处理对象辐射能。 通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。 可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。
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公开(公告)号：US09633876B2
公开(公告)日：2017-04-25
申请号：US12776845
申请日：2010-05-10
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
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5.发明授权Selective reflectivity process chamber with customized wavelength response and method 有权选择性反射处理室，具有定制的波长响应和方法公开(公告)号：US07737385B2
公开(公告)日：2010-06-15
申请号：US11506174
申请日：2006-08-16
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译： 描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。 在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。 腔室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的治疗对象辐射能。 通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。 可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。
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6.发明授权Selective reflectivity process chamber with customized wavelength response and method 有权选择性反射处理室，具有定制的波长响应和方法公开(公告)号：US07115837B2
公开(公告)日：2006-10-03
申请号：US10629400
申请日：2003-07-28
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译： 描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。 在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。 室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的处理对象辐射能。 通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。 可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。
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7.发明申请Process and System For Varying the Exposure to a Chemical Ambient in a Process Chamber 审中-公开改变处理室中暴露于化学环境的过程和系统公开(公告)号：US20090325386A1
公开(公告)日：2009-12-31
申请号：US12473762
申请日：2009-05-28
申请人： Daniel J. Devine , Rudy Santo Tomas Cardema , Shuen Chun Choy , Carl J. Galewski , Yao Zhi Hu , Bruce W. Peuse , Hung Thanh Phan
发明人： Daniel J. Devine , Rudy Santo Tomas Cardema , Shuen Chun Choy , Carl J. Galewski , Yao Zhi Hu , Bruce W. Peuse , Hung Thanh Phan
IPC分类号： H01L21/465 , C23C16/44 , C23C16/00 , G01F25/00
CPC分类号： C23C16/4412 , C23C16/45557 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/67017 , H01L21/67253
摘要： A processing system is disclosed for conducting various processes on substrates, such as semiconductor wafers by varying the exposure to a chemical ambient. The processing system includes a processing region having an inlet and an outlet for flowing fluids through the chamber. The outlet is in communication with a conductance valve that is positioned in between the processing region outlet and a vacuum exhaust channel. The conductance valve rapidly oscillates or rotates between open and closed positions for controlling conductance through the processing region. This feature is coupled with the ability to rapidly pulse chemical species through the processing region while simultaneously controlling the pressure in the processing region. Of particular advantage, the conductance valve is capable of transitioning the processing region through pressure transitions of as great as 100:1 while chemical species are flowed through the processing region using equally fast control valves in a synchronous pulsed fashion.
摘要翻译： 公开了一种处理系统，用于通过改变对化学环境的暴露来进行诸如半导体晶片的衬底上的各种处理。 处理系统包括具有用于使流体流过腔室的入口和出口的处理区域。 出口与位于处理区域出口和真空排气通道之间的电导阀连通。 电导阀在打开和关闭位置之间快速振荡或旋转，以控制通过处理区域的电导。 该特征与通过处理区域快速脉冲化学物质同时控制处理区域中的压力的能力相结合。 特别有利的是，电导阀能够通过高达100:1的压力转换使处理区域转变，同时化学物质以同步脉冲的方式使用同等快速的控制阀流过加工区域。
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公开(公告)号：US07045746B2
公开(公告)日：2006-05-16
申请号：US10706367
申请日：2003-11-12
IPC分类号： F27D11/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D5/0037
摘要： As part of a system for processing a workpiece by applying a controlled heat to the workpiece, a heating arrangement includes an array of spaced apart heating elements for use in a confronting relationship with the workpiece to subject the workpiece to a direct radiation that is produced. A radiation shield includes a plurality of members supported for movement between (i) retracted positions, which allow the direct radiation to reach the workpiece, and (ii) extended positions, in which the plurality of members cooperate in way which serves to at least partially block the direct radiation from reaching the workpiece and to absorb radiation emitted and reflected by the workpiece and thereby achieve greater control of the time-temperature profile than previously obtainable. At least certain ones of the members move between adjacent ones of the heating elements in moving those certain members between the retracted and extended positions. Tubular, curved and plate-like member configurations can be used.
摘要翻译： 作为通过向工件施加受控热来加工工件的系统的一部分，加热装置包括与工件相对的关系中使用的间隔开的加热元件的阵列，以使工件受到所产生的直接辐射。 辐射屏蔽包括多个构件，所述多个构件被支撑用于在（i）缩回位置之间移动，所述缩回位置允许直接辐射到达工件;以及（ii）延伸位置，其中所述多个构件以其至少部分 阻止直接辐射到达工件并吸收工件发射和反射的辐射，从而实现比以前可获得的时间 - 温度分布的更大控制。 至少某些构件在相邻的加热元件之间移动，以在缩回位置和延伸位置之间移动那些特定构件。 可以使用管状，弯曲和板状构件构造。
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公开(公告)号：US09184072B2
公开(公告)日：2015-11-10
申请号：US11829258
申请日：2007-07-27
申请人： Daniel J. Devine , Charles Crapuchettes , Dixit Desai , Rene George , Vincent C. Lee , Yuya Matsuda , Jonathan Mohn , Ryan M. Pakulski , Stephen E. Savas , Martin Zucker
发明人： Daniel J. Devine , Charles Crapuchettes , Dixit Desai , Rene George , Vincent C. Lee , Yuya Matsuda , Jonathan Mohn , Ryan M. Pakulski , Stephen E. Savas , Martin Zucker
CPC分类号： H01L21/6719 , H01L21/67069 , Y10T29/49
摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.
摘要翻译： 描述了用于在处理过程中处理工件的装置和方法。 多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。 每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。 腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。 屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。
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10.发明申请公开(公告)号：US20100193501A1
公开(公告)日：2010-08-05
申请号：US12696119
申请日：2010-01-29
IPC分类号： H05B3/68
CPC分类号： H01L21/6831 , H01L21/67248 , H02N1/08
摘要： An electrostatic chuck system for maintaining a desired temperature profile across the surface of the substrate is disclosed. The electrostatic chuck system includes a pedestal support defining a substantially uniform temperature profile across the surface of the pedestal support and an electrostatic chuck supported by the pedestal support. The electrostatic chuck has a clamping electrode and a plurality of independently controlled heating electrodes. The independently controlled heating electrodes include an inner heating electrode defining an inner heating zone and a peripheral heating electrode defining a peripheral heating zone separated by a gap distance. The temperature profile across the surface of the substrate can be tuned by varying thermal characteristics of the pedestal thermal zone, the inner heating zone, the peripheral heating zone, or by varying the size of the gap distance between the inner heating electrode and the peripheral heating electrode.
摘要翻译： 公开了一种用于在衬底的表面上保持所需温度分布的静电吸盘系统。 静电吸盘系统包括基座支撑件，其限定跨越基座支撑件的表面的基本上均匀的温度曲线以及由基座支撑件支撑的静电卡盘。 静电卡盘具有夹持电极和多个独立控制的加热电极。 独立控制的加热电极包括限定内部加热区域的内部加热电极和限定由间隙距离隔开的外围加热区域的外围加热电极。 通过改变基座热区，内部加热区，周边加热区的热特性，或者通过改变内部加热电极和周边加热之间的间隙距离的大小来调节衬底表面上的温度分布 电极。
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