公开(公告)号：US20080248657A1

公开(公告)日：2008-10-09

申请号：US11784503

申请日：2007-04-06

申请人： Zsolt Nenyei ,  Paul J. Timans ,  Wilfried Lerch ,  Juergen Niess ,  Manfred Falter ,  Patrick Schmid ,  Conor Patrick O'Carroll ,  Rudy Cardema ,  Igor Fidelman ,  Sing-Pin Tay ,  Yao Zhi Hu ,  Daniel J. Devine

发明人： Zsolt Nenyei ,  Paul J. Timans ,  Wilfried Lerch ,  Juergen Niess ,  Manfred Falter ,  Patrick Schmid ,  Conor Patrick O'Carroll ,  Rudy Cardema ,  Igor Fidelman ,  Sing-Pin Tay ,  Yao Zhi Hu ,  Daniel J. Devine

IPC分类号： H01L21/00

CPC分类号： H01L21/67115

摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

摘要翻译： 公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。 根据本公开，在热处理室中处理两个晶片的倍数。 热处理室与用于加热晶片的至少一个加热装置连通。 将晶片以面对面配置或背对背配置放置在热处理室中。

公开(公告)号：US07977258B2

公开(公告)日：2011-07-12

申请号：US11784503

申请日：2007-04-06

申请人： Zsolt Nenyei ,  Paul J. Timans ,  Wilfried Lerch ,  Jüergen Niess ,  Manfred Falter ,  Patrick Schmid ,  Conor Patrick O'Carroll ,  Rudy Cardema ,  Igor Fidelman ,  Sing-Pin Tay ,  Yao Zhi Hu ,  Daniel J. Devine

发明人： Zsolt Nenyei ,  Paul J. Timans ,  Wilfried Lerch ,  Jüergen Niess ,  Manfred Falter ,  Patrick Schmid ,  Conor Patrick O'Carroll ,  Rudy Cardema ,  Igor Fidelman ,  Sing-Pin Tay ,  Yao Zhi Hu ,  Daniel J. Devine

IPC分类号： H01L21/00 ,  F27B9/14

CPC分类号： H01L21/67115

摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

摘要翻译： 公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。 根据本公开，在热处理室中处理两个晶片的倍数。 热处理室与用于加热晶片的至少一个加热装置连通。 将晶片以面对面配置或背对背配置放置在热处理室中。

公开(公告)号：US20100151694A1

公开(公告)日：2010-06-17

申请号：US12334425

申请日：2008-12-12

申请人： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

发明人： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

IPC分类号： H01L21/316 ,  C23C16/00

CPC分类号： H01L21/31654 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68771

摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

摘要翻译： 描述了等离子体辅助低温自由基氧化。 除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。 选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。 可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。 通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

公开(公告)号：US08236706B2

公开(公告)日：2012-08-07

申请号：US12334425

申请日：2008-12-12

申请人： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

发明人： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31654 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68771

摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

摘要翻译： 描述了等离子体辅助低温自由基氧化。 除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。 选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。 可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。 通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

公开(公告)号：US06100149A

公开(公告)日：2000-08-08

申请号：US886215

申请日：1997-07-01

申请人： Zsolt Nenyei ,  Wilfried Lerch ,  Helmut Sommer

发明人： Zsolt Nenyei ,  Wilfried Lerch ,  Helmut Sommer

IPC分类号： H01L21/26 ,  H01L21/28 ,  H01L21/324 ,  H01L21/336

CPC分类号： H01L21/3247 ,  H01L21/28185 ,  H01L21/28211 ,  H01L21/324

摘要： A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.

摘要翻译： 提出了一种硅衬底快速热处理（RTP）的方法，其中使用非常低的反应气体分压来控制硅表面上的氧化物的蚀刻和生长。

公开(公告)号：US06830631B2

公开(公告)日：2004-12-14

申请号：US10220001

申请日：2002-09-25

申请人： Zsolt Nenyei ,  Wilfried Lerch ,  Jürgen Niess ,  Thomas Graf

发明人： Zsolt Nenyei ,  Wilfried Lerch ,  Jürgen Niess ,  Thomas Graf

IPC分类号： B08B704

CPC分类号： C23C16/4408 ,  C23C14/564 ,  H01L21/67098 ,  Y10S134/902 ,  Y10S438/905 ,  Y10S438/906

摘要： A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.

摘要翻译： 提供了一种去除吸附在室的表面上的第一分子和/或在室中发现的至少一个物体的方法。 第二，对第一分子具有解吸作用的极性分子被引入室中。 第二分子包括氮和氢，特别是NH 3分子。

公开(公告)号：US09252011B2

公开(公告)日：2016-02-02

申请号：US14131943

申请日：2012-07-12

申请人： Juergen Niess ,  Wilfried Lerch ,  Wilhelm Kegel ,  Alexander Gschwandtner

发明人： Juergen Niess ,  Wilfried Lerch ,  Wilhelm Kegel ,  Alexander Gschwandtner

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C8/10 ,  C23C8/36 ,  C23C8/38 ,  H01J37/32 ,  H01L21/67 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L21/02238 ,  C23C8/10 ,  C23C8/36 ,  C23C8/38 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/67115 ,  H01L31/02167 ,  H01L31/18 ,  Y02E10/50

摘要： A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.

摘要翻译： 描述了在衬底上形成氧化物层的方法，其中通过来自含氧气体的微波在邻近于衬底的至少一个表面处产生等离子体，其中微波通过磁控管通过 至少一个微波棒，其布置成与衬底相对并且包括外部导体和内部导体。 在形成氧化物层期间，将平均微波功率密度设定为P = 0.8-10W / cm 2，将等离子体持续时间设定为t = 0.1〜600s，将压力设定为p = 2.67-266.64Pa（ 20〜2000mTorr），将基板表面与微波棒之间的距离设定为d = 5-120mm。 上述和潜在的另外的工艺条件彼此匹配，使得衬底保持在低于200℃的温度，并且在面向等离子体的衬底的表面上诱导氧化物生长。

公开(公告)号：US06953338B2

公开(公告)日：2005-10-11

申请号：US10182594

申请日：2001-01-19

申请人： Uwe Kreiser ,  Karsten Weber ,  Wilfried Lerch ,  Michael Grandy ,  Patrick Schmid ,  Jürgen Niess ,  Olgun Altug

发明人： Uwe Kreiser ,  Karsten Weber ,  Wilfried Lerch ,  Michael Grandy ,  Patrick Schmid ,  Jürgen Niess ,  Olgun Altug

IPC分类号： H01L21/683 ,  H01L21/00 ,  H01L21/324 ,  H01L21/687 ,  F27D5/00

CPC分类号： H01L21/68742 ,  H01L21/67115 ,  H01L21/6875 ,  H01L21/68785

摘要： The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.

摘要翻译： 本发明的目的是减少在基板被放置在支撑元件上的室中用于热处理基板，特别是半导体基板的装置中的划痕的形成。 根据本发明，所述目的通过可移位的支撑元件来实现。

公开(公告)号：US06561694B1

公开(公告)日：2003-05-13

申请号：US09744880

申请日：2001-04-19

申请人： Wilfried Lerch ,  Markus Hauf

发明人： Wilfried Lerch ,  Markus Hauf

IPC分类号： G01J500

CPC分类号： G01J5/0003 ,  G01J5/524 ,  G01J2005/0048

摘要： A method and apparatus for calibrating temperature measurements that are taken with a first radiation detector for measuring thermal radiation given off by a reference substrate are provided. The method includes the steps of heating the reference substrate, which carries at least one reference material having a known melting point temperature, to or over the melting point temperature and measuring the thermal radiation of the reference substrate during the heating step, during a cooling period that follows the heating, or during both the heating and the cooling periods. The method also includes the step of correlating a measurement plateau of the thermal radiation which occurs during the measuring step with the known melting point temperature.

摘要翻译： 提供了用于校准用于测量由参考基板发出的热辐射的第一辐射检测器进行的温度测量的方法和装置。 该方法包括以下步骤：在冷却期间，将具有已知熔点温度的至少一种参考材料的参考基板加热至熔点以上并在加热步骤期间测量参考基板的热辐射， 在加热之后，或在加热和冷却期间。 该方法还包括将在测量步骤期间发生的热辐射的测量平台与已知熔点温度相关联的步骤。

公开(公告)号：US20180076070A1

公开(公告)日：2018-03-15

申请号：US15563647

申请日：2016-04-01

申请人： Wilfried Lerch

发明人： Michael Klick ,  Ralf Rothe ,  Wilfried Lerch ,  Johannes Rehli

IPC分类号： H01L21/673 ,  C23C16/509 ,  H01J37/32

CPC分类号： H01L21/67313 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/67326

摘要： In order to provide an improved introduction of high-frequency waves into a wafer boat, a plasma treatment apparatus for wafers, in particular for semiconductor wafers for semiconductor or photovoltaic applications, is provided, wherein the apparatus comprises a processing room for holding a wafer boat, the wafer boat having a plurality of electrically conductive carrier elements for the wafers, means of controlling or regulating a process gas atmosphere in the processing room, and at least one voltage source which can be connected with the wafer boat by means of a cable fed into the processing room. The cable is in the form of a coaxial cable with an inner conductor and an outer conductor, and a dielectric is provided between the inner conductor and the outer conductor in such a way that, when a high-frequency voltage is applied, the propagation speed and the wavelength of the electromagnetic wave in the coaxial cable is reduced as opposed to the propagation speed and the wavelength of the electromagnetic wave in a vacuum.