公开(公告)号：US06706643B2

公开(公告)日：2004-03-16

申请号：US10041552

申请日：2002-01-08

申请人： Sing-Pin Tay ,  Yao Zhi Hu

发明人： Sing-Pin Tay ,  Yao Zhi Hu

IPC分类号： H01L2131

CPC分类号： H01L21/28202 ,  H01L21/2686 ,  H01L29/518

摘要： The oxynitride or oxide layer is formed on a semiconductor substrate by subjecting the substrate to UV radiation while exposed to a gaseous atmosphere of O2 and one or more of N2, N2O, H2 and NH3. Thereafter, a silicon nitride layer is formed according to known 4-step gate stack dielectric processing techniques. Alternatively, a 3-step gate stack process is used, namely following UV-oxidation, a further UV-radiation in NH3 may be applied, followed by a rapid thermal anneal process in an inert ambient. By using UV-oxidation as the first step in either a 4-step or 3-step gate stack process, very thin composite dielectric films with equivalent oxide thickness (EOT) below 16 Å and as low as 14.2 Å can be obtained with significant improvement in leakage current density.

摘要翻译： 氮氧化物或氧化物层通过在暴露于O 2和N 2，N 2 O，H 2和NH 3中的一种或多种的气体气氛下对衬底进行UV辐射而形成在半导体衬底上。 此后，根据已知的4步栅极叠层电介质处理技术形成氮化硅层。 或者，使用三步栅极堆叠工艺，即在UV氧化之后，可以在NH 3中进一步的UV辐射，然后在惰性环境中进行快速热退火工艺。 通过使用UV氧化作为第4步或3步栅极叠层工艺中的第一步，可以获得具有低于16埃和低至14.2埃等效氧化物厚度（EOT）的非常薄的复合电介质膜，具有显着的改进 在漏电流密度。

公开(公告)号：US06200023B1

公开(公告)日：2001-03-13

申请号：US09270475

申请日：1999-03-15

申请人： Sing Pin Tay ,  Yao Zhi Hu ,  Randhir P. S. Thakur

发明人： Sing Pin Tay ,  Yao Zhi Hu ,  Randhir P. S. Thakur

IPC分类号： G01K1100

CPC分类号： G01K11/00

摘要： A system and method for determining the temperature of substrates in a thermal processing chamber in the presence of either an oxidizing atmosphere or a reducing atmosphere is disclosed. Specifically, temperature determinations made in accordance with the present invention are generally for calibrating other temperature sensing devices that may be used in conjunction with the thermal processing chamber. The method of the present invention is generally directed to heating a substrate containing a reactive coating within a thermal processing chamber in an oxidizing atmosphere or reducing atmosphere. As the wafer is heated, the reactive coating reacts with gases contained within the chamber based upon the temperature to which the substrate is exposed. After heated, the thickness of any coating that is formed on the substrate is then measured for determining the temperature to which the substrate was heated. This information can then be used to calibrate other temperature sensing devices, such as thermocouples and pyrometers.

摘要翻译： 公开了一种用于在存在氧化气氛或还原气氛的情况下确定热处理室中的衬底的温度的系统和方法。 具体来说，根据本发明制成的温度通常用于校准可与热处理室结合使用的其它温度感测装置。 本发明的方法一般涉及在氧化气氛或还原性气氛中加热在热处理室内含有反应性涂层的基材。 当晶片被加热时，反应性涂层基于衬底暴露的温度与包含在腔室内的气体反应。 加热后，测量形成在基板上的任何涂层的厚度，以确定衬底被加热到的温度。 此信息可用于校准其他温度传感设备，如热电偶和高温计。

公开(公告)号：US20100151694A1

公开(公告)日：2010-06-17

申请号：US12334425

申请日：2008-12-12

申请人： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

发明人： Bruce W. Peuse ,  Yaozhi Hu ,  Paul Janis Timans ,  Guangcai Xing ,  Wilfried Lerch ,  Sing-Pin Tay ,  Stephen E. Savas ,  Georg Roters ,  Zsolt Nenyei ,  Ashok Sinha

IPC分类号： H01L21/316 ,  C23C16/00

CPC分类号： H01L21/31654 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68771

摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

摘要翻译： 描述了等离子体辅助低温自由基氧化。 除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。 选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。 可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。 通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

公开(公告)号：US06707011B2

公开(公告)日：2004-03-16

申请号：US10272462

申请日：2002-10-16

申请人： Sing-Pin Tay ,  Yao Zhi Hu

发明人： Sing-Pin Tay ,  Yao Zhi Hu

IPC分类号： F27B514

CPC分类号： H01L21/67115 ,  H05B3/0047

摘要： In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures include associated reflectors to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). The lamps with such enclosures are mounted for rotation so that the reflectors may alternately shield all or a portion of emitted lamp radiation from the semiconductor substrate.

摘要翻译： 在快速热处理系统中，一组热灯产生辐射热，用于将半导体衬底（例如半导体晶片）的表面加热至选定的温度或一组温度，同时保持在封闭的腔室内。 热灯由一个或多个光学透明的外壳围绕，隔离加热灯与腔室环境及其中的晶片或晶片。 光学透明的外壳包括相关联的反射器，以将较大比例的发射的辐射热能从灯引向半导体晶片。 具有这种外壳的灯被安装以旋转，使得反射器可以交替地屏蔽来自半导体衬底的发射的灯辐射的全部或一部分。

公开(公告)号：US06600138B2

公开(公告)日：2003-07-29

申请号：US09836098

申请日：2001-04-17

申请人： Markus Hauf ,  Sing-Pin Tay ,  Yao Zhi Hu

发明人： Markus Hauf ,  Sing-Pin Tay ,  Yao Zhi Hu

IPC分类号： F27B514

CPC分类号： H05B3/0047 ,  H01L21/67115

摘要： In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may include associated reflectors and/or lenses to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). Thin planar quartz liners may also be interposed between the lamps and the substrate. By controlling radiant energy distribution within the chamber, and eliminating thick planar quartz windows commonly used to isolate the lamps in prior art RTP systems, higher processing rates and improved reliability are obtained.

公开(公告)号：US06359263B2

公开(公告)日：2002-03-19

申请号：US09390305

申请日：1999-09-03

申请人： Sing Pin Tay ,  Yao Zhi Hu ,  Randhir P. S. Thakur ,  Arnon Gat

发明人： Sing Pin Tay ,  Yao Zhi Hu ,  Randhir P. S. Thakur ,  Arnon Gat

IPC分类号： A21B100

CPC分类号： H01L21/67115

摘要： A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.

公开(公告)号：US06451713B1

公开(公告)日：2002-09-17

申请号：US09836620

申请日：2001-04-17

申请人： Sing-Pin Tay ,  Yao Zhi Hu ,  Sagy Levy ,  Jeffrey Gelpey

发明人： Sing-Pin Tay ,  Yao Zhi Hu ,  Sagy Levy ,  Jeffrey Gelpey

IPC分类号： H01L2131

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/518

摘要： The oxynitride or oxide layer formed on a semiconductor substrate is pre-treated with UV-excited gas (such as chlorine or nitrogen) to improve the layer surface condition and increase the density of nucleation sites for subsequent silicon nitride deposition. The pre-treatment is shown to reduce the root mean square surface roughness of thinner silicon nitride films (with physical thicknesses below 36 Å, or even below 20 Å that are deposited on the oxynitride layer by chemical vapor deposition (CVD).

摘要翻译： 形成在半导体衬底上的氧氮化物或氧化物层用UV激发气体（如氯或氮）进行预处理，以改善层的表面状态，并提高后续氮化硅沉积的成核位置的密度。 预处理显示为减少通过化学气相沉积（CVD）沉积在氮氧化物层上的较薄的氮化硅膜（物理厚度低于或者甚至低于20埃）的均方根表面粗糙度。

公开(公告)号：US06303524B1

公开(公告)日：2001-10-16

申请号：US09789062

申请日：2001-02-20

申请人： Rahul Sharangpani ,  Sing-Pin Tay

发明人： Rahul Sharangpani ,  Sing-Pin Tay

IPC分类号： H01L2131

CPC分类号： H01L21/02118 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/3127

摘要： A method for curing low k dielectric materials uses very short, relatively high temperature cycles instead of the conventionally used (lower temperature/longer time) thermal cycles. A substrate, such as a semiconductor wafer, coated with a layer of coating material is heated to an elevated temperature at a heating rate of greater than about 20° C. per second. Once the coating material has been converted to a low dielectric constant material with desired properties, the coated substrate is cooled. Alternatively, spike heating raises and promptly lowers the temperature of the coated substrate to effect curing in one or a series of spike heating steps. The method allows for a thinner refractory barrier metal layer thickness to prevent copper diffusion, and uses shorter curing times resulting in higher throughput.

摘要翻译： 用于固化低k电介质材料的方法使用非常短的相对高的温度循环，而不是常规使用的（较低温度/较长时间）的热循环。 涂覆有涂层材料层的衬底（例如半导体晶片）以大于约20℃/秒的加热速率被加热到升高的温度。 一旦将涂料转化为具有所需性能的低介电常数材料，则将涂覆的基材冷却。 或者，尖峰加热升高并且迅速降低涂覆的基底的温度以在一个或一系列尖峰加热步骤中实现固化。 该方法允许更薄的难熔阻挡金属层厚度以防止铜扩散，并且使用较短的固化时间导致较高的生产量。

公开(公告)号：US4968641A

公开(公告)日：1990-11-06

申请号：US370319

申请日：1989-06-22

申请人： Alexander Kalnitsky ,  Sing Pin Tay ,  Joseph P. Ellul ,  Roger S. Abbott

发明人： Alexander Kalnitsky ,  Sing Pin Tay ,  Joseph P. Ellul ,  Roger S. Abbott

IPC分类号： H01L21/32 ,  H01L21/762

CPC分类号： H01L21/32 ,  H01L21/76216 ,  Y10S438/911

摘要： In a method for the formation of an isolating oxide layer on a silicon substrate, an anti-nitridation layer is formed on a silicon substrate at locations where isolating oxide is desired. The anti-nitridation layer has openings therethrough which expose the silicon substrate at locations where isolating oxide is not desired. A thin silicon nitride layer is selectively grown at the locations where isolating oxide is not desired by nitridation of the exposed silicon substrate. Isolating oxide is then selectively grown at the locations where isolating oxide is desired. The thin silicon nitride layer inhibits oxide growth at the locations where isolating oxide is not desired. The method reduces "bird's beak" formation and is particularly applicable to high density IGFET devices.

摘要翻译： 在硅衬底上形成隔离氧化物层的方法中，在需要隔离氧化物的位置的硅衬底上形成抗氮化层。 抗氮化层具有穿过其的开口，在不需要隔离氧化物的位置处露出硅衬底。 通过暴露的硅衬底的氮化，在不需要隔离氧化物的位置选择性地生长薄氮化硅层。 然后在需要隔离氧化物的位置选择性地生长隔离氧化物。 薄氮化硅层在不需要隔离氧化物的位置抑制氧化物生长。 该方法减少了“鸟嘴”形成，特别适用于高密度IGFET装置。

公开(公告)号：US20120298039A1

公开(公告)日：2012-11-29

申请号：US13568002

申请日：2012-08-06

申请人： Bruce W. PEUSE ,  Yaozhi HU ,  Paul Janis TIMANS ,  Guangcai XING ,  Wilfried LERCH ,  Sing-Pin TAY ,  Stephen E. SAVAS ,  Georg ROTERS ,  Zsolt NENYEI ,  Ashok SINHA

发明人： Bruce W. PEUSE ,  Yaozhi HU ,  Paul Janis TIMANS ,  Guangcai XING ,  Wilfried LERCH ,  Sing-Pin TAY ,  Stephen E. SAVAS ,  Georg ROTERS ,  Zsolt NENYEI ,  Ashok SINHA

IPC分类号： C23C16/50 ,  C23C16/505

CPC分类号： H01L21/31654 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68771

摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

摘要翻译： 描述了等离子体辅助低温自由基氧化。 除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。 选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。 可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。 通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。