公开(公告)号：US20240275125A1

公开(公告)日：2024-08-15

申请号：US18563049

申请日：2022-05-24

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Sven GERHARD ,  Bruno JENTZSCH ,  Tilman RÜGHEIMER ,  Christoph WALTER

IPC: H01S5/02255 ,  H01S5/02 ,  H01S5/02345 ,  H01S5/185 ,  H01S5/323 ,  H01S5/42

CPC classification number: H01S5/02255 ,  H01S5/0207 ,  H01S5/185 ,  H01S5/42 ,  H01S5/02345 ,  H01S5/32341

Abstract: The disclosed optoelectronic semiconductor chip includes a carrier, a semiconductor layer sequence on the carrier having at least one active zone for generating radiation, a layer of high optical refractive index on an output coupling facet of the semiconductor layer sequence for the output coupling of radiation, and a coating of low optical refractive index directly on an outer side of the layer of high optical refractive index for the total internal reflection of the radiation, wherein the semiconductor layer sequence is configured to guide the radiation in the active zone perpendicularly to a growth direction of the semiconductor layer sequence, and the layer of high optical refractive index is configured to deflect the radiation at the outer side parallel to the growth direction.

公开(公告)号：US20250030219A1

公开(公告)日：2025-01-23

申请号：US18713811

申请日：2022-11-28

Applicant: ams-OSRAM International GmbH

Inventor： Tobias HAUPELTSHOFER ,  Markus Reinhard HORN ,  Christoph WALTER

IPC: H01S5/0233 ,  H01S5/0239 ,  H01S5/40

Abstract: The invention relates to a laser component including a first laser chip with a first emission region, a second laser chip with a second emission region, and a connection carrier with an upper side and an underside, wherein the first laser chip is secured to the upper side of the connection carrier and is electrically connected, the second laser chip is secured to the underside of the connection carrier and is electrically connected, and the connection carrier has a thickness of max. 200 μm.

公开(公告)号：US20240405507A1

公开(公告)日：2024-12-05

申请号：US18710405

申请日：2022-11-17

Applicant: ams-OSRAM International GmbH

Inventor： Joerg Erich SORG ,  Jan SEIDENFADEN ,  Markus HORN ,  Christoph WALTER ,  Herbert BRUNNER

IPC: H01S5/0232 ,  H01S5/02255 ,  H01S5/02355 ,  H01S5/024

Abstract: The invention relates to an optoelectronic component including an electrically conductive first contact layer located on a carrier substrate, an electrically conductive platform that is located on the first contact layer and is formed integrally therewith, at least one laser diode that is located on the platform and is electrically connected thereto, and an electrically conductive second contact layer which is electrically coupled to the at least one laser diode. The height of the platform is such that the laser facet of the at least one laser diode is at such a vertical distance from the carrier substrate that a light cone emitted by the laser diode through the laser facet does not strike the carrier substrate within a predefined horizontal distance from the laser facet.

公开(公告)号：US20240192578A1

公开(公告)日：2024-06-13

申请号：US18286875

申请日：2022-04-12

Applicant: ams-OSRAM International GmbH

Inventor： Jörg Erich SORG ,  Tilman RÜGHEIMER ,  Christoph WALTER

IPC: G03B21/20 ,  G03B21/00

CPC classification number: G03B21/2013 ,  G03B21/006 ,  G03B21/204 ,  G03B21/2053 ,  G03B21/2066 ,  G03B21/208

Abstract: A projector includes a first optoelectronic semiconductor chip for generating a first radiation having a first color. The projector also includes a second optoelectronic semiconductor chip for generating a second radiation-having a second color. The projector further includes a wavelength conversion element which is configured to generate a third radiation having a third color from a first portion of the first radiation. The projector additionally includes beam splitter. The projector also includes a scattering plate. The wavelength conversion element is configured to fully convert the first portion of the first radiation. The beam splitter is configured to branch off a second portion of the first radiation upstream of the wavelength conversion element. The scattering plate is arranged in a beam path of the second portion of the first radiation at a point at which the first portion has already been branched off.