公开(公告)号：US20230197893A1

公开(公告)日：2023-06-22

申请号：US17924288

申请日：2021-05-10

Applicant: ams-OSRAM International GmbH

Inventor： Christoph EICHLER ,  Lars NÄHLE ,  Sven GERHARD

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01S5/00 ,  H01S5/02 ,  H01S5/40

CPC classification number: H01L33/10 ,  H01L33/005 ,  H01L33/62 ,  H01L25/0753 ,  H01S5/0071 ,  H01S5/0203 ,  H01S5/40 ,  H01L2933/0058

Abstract: The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

公开(公告)号：US20240047935A1

公开(公告)日：2024-02-08

申请号：US18546148

申请日：2022-01-27

Applicant: ams-OSRAM International GmbH

Inventor： Lars NÄHLE ,  Sven GERHARD

IPC: H01S5/02 ,  H01S5/22 ,  H01S5/10

CPC classification number: H01S5/0203 ,  H01S5/22 ,  H01S5/10

Abstract: The invention relates to a method for producing a plurality of semiconductor lasers, including the steps of: a) providing a substrate having a semiconductor layer sequence and having a plurality of component regions, each component region having at least one resonator region and being delimited perpendicular to the resonator region by singulation lines in the transverse direction and being delimited parallel to the resonator region by singulation lines in the longitudinal direction; b) forming recesses which overlap with the singulation lines in the transverse direction, using a dry-chemical etching method, wherein, when the substrate is seen from above, the recesses have in each case at least one transition, at which a first section of a side face of the recess and a second section of the side face of the recess form an angle of more than 180° in the recess; c) wet-chemical etching of the side faces of the recesses for the purpose of forming resonator surfaces; and d) singulating the substrate along the singulation lines in the transverse direction and in the longitudinal direction. Additionally, a semiconductor laser is specified.