公开(公告)号：US20250047063A1

公开(公告)日：2025-02-06

申请号：US18836087

申请日：2023-01-18

Applicant: ams-OSRAM International GmbH

Inventor： Tansen VARGHESE ,  Hans-Jürgen LUGAUER ,  Hubert HALBRITTER

IPC: H01S5/042 ,  H01S5/11

Abstract: A laser diode component is described including: a semiconductor layer stack having an active zone for emitting laser radiation, a photonic crystal structure having a plurality of structured portions, contacts for electrically contacting the laser diode component, one contact having a plurality of contact portions arranged in recesses of the semiconductor layer stack (2), wherein the contact portions penetrate the active zone.

公开(公告)号：US20240372319A1

公开(公告)日：2024-11-07

申请号：US18562624

申请日：2022-04-29

Applicant: ams-OSRAM International GmbH

Inventor： Laura KREINER ,  Hubert HALBRITTER ,  Tansen VARGHESE

IPC: H01S5/042 ,  H01S5/183

Abstract: A method of manufacturing a semiconductor device includes epitaxially growing a sacrificial layer over a GaN substrate, epitaxially growing a first semiconductor layer over the sacrificial layer and forming a first layer over a first main surface of the first semiconductor layer, the first main surface being on a side of the first semiconductor layer remote from the GaN substrate. The method further includes forming a fluid channel or trench extending through the first layer and the first semiconductor layer to the sacrificial layer, etching the sacrificial layer, including introducing an etchant into the fluid channel or trench, to remove the GaN substrate and forming a second dielectric layer over a second main surface of the first semiconductor layer.

公开(公告)号：US20240332444A1

公开(公告)日：2024-10-03

申请号：US18699385

申请日：2022-08-11

Applicant: AMS-OSRAM International GmbH

Inventor： Alvaro GOMEZ-IGLESIAS ,  Norwin VON MALM ,  Tansen VARGHESE ,  Dirk BECKER

IPC: H01L31/167 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0687 ,  H02J50/30

CPC classification number: H01L31/167 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/0687 ,  H02J50/30

Abstract: An optoelectronic device is specified, including an emitter, operated with an electrical input voltage and configured to emit electromagnetic radiation during operation, a receiver, configured to convert electromagnetic radiation emitted by the emitter to an output voltage, wherein the receiver includes a semiconductor layer sequence with a plurality of stacked active layers, electromagnetic radiation emitted by the emitter is coupled into the receiver via a first side face of the semiconductor layer sequence, and the electromagnetic radiation propagates parallel to a main extension plane of the active layer inside the active layer, where it is gradually absorbed and converted into an electrical voltage.

公开(公告)号：US20250132607A1

公开(公告)日：2025-04-24

申请号：US18694514

申请日：2022-08-17

Applicant: ams-OSRAM International GmbH

Inventor： Dirk BECKER ,  Norwin von Malm ,  Tim BOESCKE ,  Alvaro GOMEZ-IGLESIAS ,  Martin HETZL ,  Horst VARGA ,  Tansen VARGHESE

IPC: H02J50/30 ,  H02J50/40 ,  H10F55/255 ,  H10F77/40

Abstract: The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.

公开(公告)号：US20240421558A1

公开(公告)日：2024-12-19

申请号：US18699604

申请日：2022-09-01

Applicant: ams-OSRAM International GmbH

Inventor： Tansen VARGHESE ,  Alvaro GOMEZ-IGLESIAS ,  Martin HETZL

IPC: H01S5/026 ,  H01S5/02315

Abstract: An optoelectronic device is specified including emitters, each emitter configured to emit electromagnetic radiation, and an assigned receiver for each emitter, configured to receive at least part of the electromagnetic radiation emitted by the emitter, wherein the emitters are configured to be operated with an input voltage, each receiver is configured to provide at least part of an output voltage, each emitter is physically connected to the assigned receiver.

公开(公告)号：US20240413260A1

公开(公告)日：2024-12-12

申请号：US18700592

申请日：2022-09-08

Applicant: ams-OSRAM International GmbH

Inventor： Tansen VARGHESE ,  Martin HETZL ,  Dirk BECKER

IPC: H01L31/12

Abstract: An optoelectronic device is specified, said device including a emitter configured to emit electromagnetic radiation having two or more peak wavelengths and to be operated with an input voltage, and a receiver configured to receive the electromagnetic radiation and to provide an output voltage.