公开(公告)号：US20250015561A1

公开(公告)日：2025-01-09

申请号：US18708399

申请日：2022-11-02

Applicant: ams-OSRAM International GmbH

Inventor： Norwin VON MALM ,  Hubert HALBRITTER

IPC: H01S5/183 ,  H01S5/02

Abstract: The invention relates to a method for producing a multiplicity of vertically emitting semiconductor laser diodes, including providing a growth substrate, epitaxially growing an epitaxial semiconductor layer sequence including an active layer for generating electromagnetic radiation and including a sacrificial layer, wherein the sacrificial layer is disposed between the growth substrate and the active layer, forming trenches in the semiconductor layer sequence, resulting in a multiplicity of semiconductor layer stacks being formed and portions of the sacrificial layer being exposed, applying a carrier onto the epitaxial semiconductor layer sequence, and detaching the growth substrate by electrochemically etching the sacrificial layer, wherein an electrochemical etchant has access to the sacrificial layer through a cut-out in the growth substrate and/or through a cavity in the carrier. The invention also relates to a vertically emitting semiconductor laser diode.

公开(公告)号：US20240372318A1

公开(公告)日：2024-11-07

申请号：US18689881

申请日：2022-09-09

Applicant: AMS-OSRAM INTERNATIONAL GMBH

Inventor： Norwin VON MALM ,  Dominik SCHOLZ

IPC: H01S5/024

Abstract: An optoelectronic semiconductor component includes a semiconductor body having a first region of a first conductivity, a second region of a second conductivity and an active region. Further, the semiconductor component includes a first metallic heat sink, a second metallic heat sink and a thin film insulation layer. The first heat sink and the second heat sink are arranged on a mounting side of the semiconductor body. The first heat sink electrically contacts the first region. The thin film insulation layer electrically insulates the first heat sink from the second heat sink. The thin film insulation layer is in direct contact with the first heat sink and the second heat sink.

公开(公告)号：US20240332444A1

公开(公告)日：2024-10-03

申请号：US18699385

申请日：2022-08-11

Applicant: AMS-OSRAM International GmbH

Inventor： Alvaro GOMEZ-IGLESIAS ,  Norwin VON MALM ,  Tansen VARGHESE ,  Dirk BECKER

IPC: H01L31/167 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0687 ,  H02J50/30

CPC classification number: H01L31/167 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/0687 ,  H02J50/30

Abstract: An optoelectronic device is specified, including an emitter, operated with an electrical input voltage and configured to emit electromagnetic radiation during operation, a receiver, configured to convert electromagnetic radiation emitted by the emitter to an output voltage, wherein the receiver includes a semiconductor layer sequence with a plurality of stacked active layers, electromagnetic radiation emitted by the emitter is coupled into the receiver via a first side face of the semiconductor layer sequence, and the electromagnetic radiation propagates parallel to a main extension plane of the active layer inside the active layer, where it is gradually absorbed and converted into an electrical voltage.

公开(公告)号：US20240364073A1

公开(公告)日：2024-10-31

申请号：US18682606

申请日：2022-08-04

Applicant: ams-OSRAM International GmbH

Inventor： Norwin VON MALM ,  Martin Rudolf BEHRINGER

IPC: H01S5/02 ,  H01S5/02326 ,  H01S5/028 ,  H01S5/185

CPC classification number: H01S5/0201 ,  H01S5/02326 ,  H01S5/0282 ,  H01S5/185 ,  H01S2301/176

Abstract: A method for producing a multiplicity of semiconductor laser chips, the method including growing a semiconductor layer having an active region, forming a multiplicity of laser chip regions, each laser chip region having a part of the active region, a part of the semiconductor layer, a first mirror and a second mirror, applying a sacrificial layer to the laser chip regions, shaping at least one support region per laser chip region within the sacrificial layer, applying an auxiliary carrier to the sacrificial layer, singulating the laser chip regions into semiconductor laser chips on the auxiliary carrier, each semiconductor laser chip having a first region of the semiconductor layer and a second region of the semiconductor layer, the first region and the second region having mutually different extents parallel to the main plane of extent of the semiconductor layer, and the first mirror and the second mirror adjoining the second region, removing the sacrificial layer, and simultaneously transferring at least some of the semiconductor laser chips to a carrier. A semiconductor laser chip is additionally specified.

公开(公告)号：US20230369550A1

公开(公告)日：2023-11-16

申请号：US18028169

申请日：2021-09-15

Applicant: ams-OSRAM International GmbH

Inventor： Norwin VON MALM ,  Laura KREINER ,  Matthias GOLDBACH

IPC: H01L33/58 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L33/58 ,  H01L25/0753 ,  H01L33/62 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the steps: a) providing a carrier composite having a plurality of component regions; b) forming a filter layer on the carrier composite; c) forming a radiation conversion layer on the filter layer; d) arranging a plurality of semiconductor bodies on the radiation conversion layer, wherein the semiconductor bodies each have a semiconductor layer sequence having an active region provided for radiation generation and are free of a substrate stabilizing the semiconductor body; e) forming a contact layer for producing an electrical connection between the semiconductor bodies; f) forming an insulation layer on the contact layer; g) forming electrical contact surfaces, each of which are electrically conductively connected to the contact layer; and h) separating the carrier composite into the optoelectronic semiconductor components.--

公开(公告)号：US20230096718A1

公开(公告)日：2023-03-30

申请号：US17908960

申请日：2021-02-18

Applicant: ams-OSRAM International GmbH

Inventor： Gerd PLECHINGER ,  Norwin VON MALM ,  Laura KREINER

IPC: G01N21/47 ,  G01N21/31

Abstract: An optoelectronic device may include an arrangement having a plurality of emitter elements configured to sequentially emit light of different wavelength ranges. The arrangement may include a plurality of time-of-flight detector elements configured to detect the light emitted by the emitter elements and reflected at a sample and to carry out a measurement for determining the distance of the reflection point of the light at the sample from the respective time-of-flight detector element. The device further includes an evaluation unit configured to generate a three-dimensional image of the sample for each wavelength range emitted by the emitter elements on the basis of the light detected by the time-of-flight detector elements and the distance of the reflection point of the light from the respective time-of-flight detector element and to determine the distribution of a substance in the sample from the images.

公开(公告)号：US20240387767A1

公开(公告)日：2024-11-21

申请号：US18694144

申请日：2022-08-17

Applicant: ams-OSRAM International GmbH

Inventor： Norwin VON MALM ,  Martin HETZL ,  Horst VARGA ,  Tim BOESCKE

IPC: H01L31/173 ,  H01L31/0304 ,  H01L31/0475 ,  H01L31/054

Abstract: An optoelectronic device is specified having a transmitter which is designed to emit electromagnetic radiation and to be operated at an input voltage, a support for the transmitter, said support having a top surface and a bottom surface, a first receiver which is designed to receive at least part of the electromagnetic radiation and to supply at least part of an output voltage, wherein the transmitter comprises at least one surface emitter, the at least one surface emitter of the transmitter is mounted on the top surface of the support and radiates at least part of the electromagnetic radiation through the support, the first receiver (3) comprises at least one photodiode, and the first receiver is arranged on the bottom surface of the support.