摘要:
A bandgap reference circuit has trimming-up resistors and trimming-down resistors for bi-directional trimming. PNP transistors have base and collectors grounded and emitters connected to parallel resistors. A difference resistor drives an inverting input of an op amp that drives a transistor that generates the bandgap reference voltage Vbg. A sensing resistor connects Vbg to a splitting node that connects to the non-inverting input through a first parallel resistor. The splitting node also connects through a second parallel resistor to the inverting input. Fuses or switches enable the trimming-up and trimming-down resistors. The trimming-up resistors are in series with the sensing resistor and the trimming-down resistors are in series with an output resistor that connects Vbg to reference voltage Vref. The circuit can be designed for a more typical process since bi-directional trimming allows Vref to be raised or lowered. Many circuits need no trimming when targeted for the typical process.
摘要:
A frequency dithering circuit reduces emissions that cause Electro-Magnetic Interference (EMI) by spreading the spectrum of a clock. The clock sequences a counter that drives a digital count value to a digital-to-analog converter (DAC). The DAC outputs a sawtooth wave with a wide voltage swing. A subtractor scales down the voltage swing to produce a reduced-swing sawtooth wave which is used as an upper limit voltage. Comparators trigger a set-reset latch to toggle the clock when current pumps charge and discharge a capacitor beyond voltage limits. Since the upper limit voltage is the reduced sawtooth wave from the subtractor, the amount of time to charge the capacitor varies, dithering the period of the clock. The degree of dithering can be adjusted by programming the feedback resistance in the subtractor. The subtractor reduces the sensitivity of dithering to errors in the DAC, allowing for an inexpensive, less precise DAC.
摘要:
There is described a hybrid bonding method for through-silicon-via based wafer stacking. Patterned adhesive layers are provided to join together adjacent wafers in the stack, while solder bonding is used to electrically connect the vias. The adhesive layers are patterned to enable outgassing and to provide stress relief.
摘要:
There is described a hybrid bonding method for through-silicon-via based wafer stacking. Patterned adhesive layers are provided to join together adjacent wafers in the stack, while solder bondng is used to electrically connect the vias. The adhesive layers are patterned to enable outgassing and to provide stress relief.