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    THREE-DIMENSIONAL FLASH MEMORY AIMED AT INTEGRATION, AND METHOD FOR MANUFACTURING SAME
    2.
    发明申请
    THREE-DIMENSIONAL FLASH MEMORY AIMED AT INTEGRATION, AND METHOD FOR MANUFACTURING SAME 有权

    公开(公告)号：US20220319600A1

    公开(公告)日：2022-10-06

    申请号：US17636910

    申请日：2020-06-26

    申请人： Industry-University Cooperation Foundation Hanyang University (IUCF-HYU) ,  PeDiSem Co. Ltd.

    发明人： Yun Heub SONG ,  Inho NAM

    IPC分类号： G11C16/04 ,  H01L27/11556 ,  H01L27/11582

    摘要： Disclosed are a three-dimensional flash memory aimed at integration, and a method for manufacturing same. According to an embodiment, a three-dimensional flash memory comprises: multiple memory cell strings formed on a substrate so as to extend in a direction, each of the multiple memory cell strings comprising a channel layer and an electric charge storage layer surrounding the channel layer; multiple word lines connected perpendicularly to the multiple memory cell strings; and at least one intermediate wire layer formed at an intermediate point with regard to the direction in which the multiple memory cell strings are formed to extend, the at least one intermediate wire layer being selectively available as a source electrode or as a drain electrode with regard to each of the multiple memory cell strings. At least one of the multiple memory cell strings is formed in a free area secured among the multiple word lines as a result of inclusion of the at least one intermediate wire layer in the three-dimensional flash memory.

    VEHICLE AND METHOD OF CONTROLLING THE SAME
    6.
    发明申请
    VEHICLE AND METHOD OF CONTROLLING THE SAME 有权

    公开(公告)号：US20210146742A1

    公开(公告)日：2021-05-20

    申请号：US16832925

    申请日：2020-03-27

    申请人： HYUNDAI MOTOR COMPANY ,  KIA MOTORS CORPORATION ,  Industry-University Cooperation Foundation Hanyang University (IUCF-HYU)

    发明人： WooSung LEE ,  Eun Woo NA ,  Kunsoo HUH ,  Jongwon PARK

    IPC分类号： B60G17/0165 ,  G06N3/08

    摘要： A method of controlling a vehicle is provided. The method includes: identifying detection signals output through a plurality of detectors during travel, identifying the detection signal that changes in response to a state of a road surface among the identified detection signals, acquiring detection information corresponding to the state of the road surface based on the detection signals, recognizing the state of the road surface based on detection information for each state of the road surface stored in a non transitory memory and the acquired detection information, and controlling the plurality of suspension devices based on the recognized state of the road surface and information regarding a control strategy of the suspension device for each state of the road surface stored in the storage.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20150118793A1

    公开(公告)日：2015-04-30

    申请号：US14450337

    申请日：2014-08-04

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： MYUNG-SOO JANG ,  JAE-HWAN KIM ,  CHEOL-JON JANG ,  JI-HO SONG ,  JONG-WHA CHONG ,  KYUNG-IN CHO

    IPC分类号： G06F17/50 ,  H01L21/82 ,  H01L21/768

    CPC分类号： G06F17/5077 ,  H01L21/76898

    摘要： A method for manufacturing a semiconductor device can reduce congestion across wires while reducing a wire length. The method includes determining a first TSV candidate region in a first die and determining a second TSV candidate region in a second die perpendicular to the first die, determining a first bound region including a horizontal location of a first pin of the first die and a horizontal location of a second pin of the second die, calculating an area from overlapped regions between the first bound region and each of the first TSV candidate region and the second TSV candidate region, and performing routing for connecting the first pin and the second pin to each other based on the calculated area.

    摘要翻译： 半导体器件的制造方法可以减少电线长度而减少电线的拥塞。 该方法包括确定第一管芯中的第一TSV候选区域并确定垂直于第一管芯的第二管芯中的第二TSV候选区域，确定包括第一管芯的第一管脚的水平位置的第一绑定区域和水平 第二管芯的第二引脚的位置，计算从第一绑定区域和第一TSV候选区域和第二TSV候选区域中的每一个之间的重叠区域的区域，以及执行用于将第一引脚和第二引脚连接到每个 其他基于计算面积。