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公开(公告)号：US20220415619A1
公开(公告)日：2022-12-29
申请号：US17751048
申请日：2022-05-23
发明人： Maolin Long , Weimin Zeng , Yu Guan
IPC分类号： H01J37/32
摘要： A plasma processing apparatus including a processing chamber having one or more sidewalls and a dome is provided. The plasma processing apparatus includes a workpiece support disposed in the processing chamber configured to support a workpiece during processing, an induction coil assembly for producing a plasma in the processing chamber, a Faraday shield disposed between the induction coil assembly and the dome, the Faraday shield comprising an inner portion and an outer portion, and a thermal management system. The thermal management system including one or more heating elements configured to heat the dome, and one or more thermal pads disposed between an outer surface of the dome and the heating elements, wherein the one or more thermal pads are configured to facilitate heat transfer between the one or more heating elements and the dome. Thermal management systems and methods for processing workpieces are also provided.
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公开(公告)号：US20220384144A1
公开(公告)日：2022-12-01
申请号：US17824504
申请日：2022-05-25
发明人： Maolin Long
IPC分类号： H01J37/32
摘要： A plasma source array is provided. The plasma source array includes a plurality of hybrid plasma sourcelets disposed on a base plate. Each hybrid sourcelet includes a dielectric tube having an inner area and an outer surface; an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube; a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube. Plasma processing apparatuses incorporating the plasma source array and methods of use are also provided.
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公开(公告)号：US11515127B2
公开(公告)日：2022-11-29
申请号：US15930924
申请日：2020-05-13
IPC分类号： H01J37/32 , H01L21/203 , H01L21/677 , H01L21/68 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687
摘要： An end effector for moving workpieces and replaceable parts within a system for processing workpieces. The end effector may include an arm portion extending between a first arm end and a second arm end along the axial direction. The end effector may further include a spatula portion extending between a first spatula end and a second spatula end, the first spatula end being adjacent the second arm end. Further, the end effector may include a first support member extending outwardly from the spatula portion, a second support member extending outwardly from the spatula portion, and a shared support member extending outwardly from the arm portion. The shared support member and the first support member together to support workpieces of a first diameter, and the shared support member and the second support member together support replaceable parts of a second diameter.
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公开(公告)号：US11482434B2
公开(公告)日：2022-10-25
申请号：US17191295
申请日：2021-03-03
发明人： Michael Yang
IPC分类号： H01L21/67 , H01L21/677
摘要： A processing system for processing a plurality of workpieces includes a transfer chamber in process flow communication with a first processing chamber and a second processing chamber, the transfer chamber having a first straight side, wherein the first process chamber includes at least one first processing station, and wherein the first processing chamber is disposed along the first straight side, wherein the second process chamber includes at least two second processing stations, wherein the second processing chamber is disposed along the first straight side, and wherein the second process chamber disposed in linear arrangement with the first process chamber along the first straight side, and wherein the transfer chamber includes at least one workpiece handling robot configured to transfer at least one workpiece to the at least one first processing station and the at least two second processing stations.
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公开(公告)号：US11387115B2
公开(公告)日：2022-07-12
申请号：US16716585
申请日：2019-12-17
发明人： Chun Yan , Tsai Wen Sung , Sio On Lo , Hua Chung , Michael X. Yang
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/02 , H01L21/033 , H01L29/66 , H01L21/67 , H01J37/32 , H01L21/28
摘要： Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.
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公开(公告)号：US20220208514A1
公开(公告)日：2022-06-30
申请号：US17546516
申请日：2021-12-09
发明人： Maolin Long
IPC分类号： H01J37/32 , H01L21/263
摘要： A grid assembly for injecting process gas to a chamber. The grid assembly including a gas inlet for delivering the process gas to the grid assembly, a plurality of nozzles extending vertically through at least a portion of the grid assembly, and a plurality of layers in a vertical stacked arrangement. The plurality of layers including a top layer including one or more internal gas injection channels configured to receive process gas from the gas inlet, a bottom layer including a plurality of internal gas injection channels having one or more injection apertures configured to deliver the process gas about a horizontal plane to one or more of the plurality of nozzles, and one or more sublayers disposed between the top layer and the bottom layer, each of the one or more sublayers including an increasing number of internal gas injection channels as the one or more sublayers advance from the top layer to the bottom layer. Plasma processing apparatuses and method of processing workpiece are also provided.
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公开(公告)号：US20220189737A1
公开(公告)日：2022-06-16
申请号：US17238597
申请日：2021-04-23
发明人： Dieter Hezler , Keli Huang , Jianmin Ji , Deqiang Zeng , Manuel Sohn
摘要： A processing apparatus for processing a workpiece is presented. The processing apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. One or more radiative heat sources configured to heat the workpiece disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. The processing apparatus includes a rotation system configured to rotate the workpiece, the rotation system comprising a magnetic actuator.
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公开(公告)号：US20220165561A1
公开(公告)日：2022-05-26
申请号：US17533593
申请日：2021-11-23
发明人： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC分类号： H01J61/86 , H01J61/28 , H05H1/48 , H01J61/073 , H01J61/52
摘要： Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
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公开(公告)号：US11315801B2
公开(公告)日：2022-04-26
申请号：US17326945
申请日：2021-05-21
发明人： Qi Zhang , Haichun Yang , Hua Chung , Michael X. Yang
IPC分类号： H01L21/3213
摘要： Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide layer on the copper layer.
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公开(公告)号：US11289323B2
公开(公告)日：2022-03-29
申请号：US16208003
申请日：2018-12-03
发明人： Shuang Meng , Shawming Ma , Michael X. Yang
摘要： Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.
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