Light emitting diode (LED) structure having single epitaxial structure separated into light emitting zones

    公开(公告)号:US12206051B2

    公开(公告)日:2025-01-21

    申请号:US18231823

    申请日:2023-08-09

    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design. The single (LED) structure can also include a substrate for supporting the array, and the substrate can include one or more light shielding holes located between each emitting zone.

    Single light emitting diode (LED) structure

    公开(公告)号:US10964851B2

    公开(公告)日:2021-03-30

    申请号:US16114377

    申请日:2018-08-28

    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design. The single (LED) structure can also include a substrate for supporting the array, and the substrate can include one or more light shielding holes located between each emitting zone.

    Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses
    5.
    发明授权
    Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses 有权
    通过使用多个激光脉冲从半导体结构分离衬底来制造半导体晶片的方法

    公开(公告)号:US08921204B2

    公开(公告)日:2014-12-30

    申请号:US13936337

    申请日:2013-07-08

    Abstract: A method for fabricating semiconductor dice includes the steps of providing a wafer assembly having a substrate and semiconductor structures on the substrate; and defining the semiconductor dice on the substrate. The method also includes the step of separating the substrate from the semiconductor structures by applying a first laser pulse to each semiconductor die on the substrate having first parameters selected to break an interface between the substrate and the semiconductor structures and then applying a second laser pulse to each semiconductor die on the substrate having second parameters selected to complete separation of the substrate from the semiconductor structures. The method can also include the steps of forming one or more intermediate structures between the semiconductor dice on the substrate configured to protect the semiconductor dice during the separating step.

    Abstract translation: 制造半导体晶片的方法包括以下步骤:在衬底上提供具有衬底和半导体结构的晶片组件; 并在衬底上限定半导体晶片。 该方法还包括通过向基板上的每个半导体管芯施加第一激光脉冲来将衬底与半导体结构分离的步骤,所述第一参数被选择为破坏衬底和半导体结构之间的界面,然后施加第二激光脉冲 衬底上的每个半导体管芯具有选择的第二参数以完成衬底与半导体结构的分离。 该方法还可以包括在被配置为在分离步骤期间保护半导体晶片的衬底上的半导体晶片之间形成一个或多个中间结构的步骤。

    Method and system for fabricating light emitting diode (LED) dice with wavelength conversion layers having controlled color characteristics
    7.
    发明授权
    Method and system for fabricating light emitting diode (LED) dice with wavelength conversion layers having controlled color characteristics 有权
    用于制造具有受控颜色特性的波长转换层的发光二极管(LED)裸片的方法和系统

    公开(公告)号:US08841146B2

    公开(公告)日:2014-09-23

    申请号:US13562519

    申请日:2012-07-31

    CPC classification number: H01L33/501 H01L33/0095 H01L2933/0041

    Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of coating a transparent substrate with a wavelength conversion material, continuously evaluating a correlated color temperature (CCT) of the output electromagnetic radiation produced by the wavelength conversion material and comparing the correlated color temperature (CCT) to a target correlated color temperature (CCT), and controlling the coating step responsive to feedback from the evaluating and comparing step to adjust the correlated color temperature (CCT) to achieve the target correlated color temperature (CCT). A system for fabricating light emitting diode (LED) dice includes a coating system, a monitoring system, and a control system configured to control the coating system to adjust the correlated color temperature (CCT) of the wavelength conversion material on the transparent substrate to achieve the target correlated color temperature (CCT).

    Abstract translation: 制造发光二极管(LED)晶片的方法包括以下步骤:用波长转换材料涂覆透明衬底,连续评估由波长转换材料产生的输出电磁辐射的相关色温(CCT),并比较相关色彩 温度(CCT)到目标相关色温(CCT),并且响应于来自评估和比较步骤的反馈来控制涂层步骤以调节相关色温(CCT)以实现目标相关色温(CCT)。 一种用于制造发光二极管(LED)裸片的系统包括涂层系统,监测系统和控制系统,其被配置为控制涂层系统以调节透明衬底上的波长转换材料的相关色温(CCT)以实现 目标相关色温(CCT)。

    Method of fabricating semiconductor die using handling layer
    8.
    发明授权
    Method of fabricating semiconductor die using handling layer 有权
    使用处理层制造半导体管芯的方法

    公开(公告)号:US08802469B2

    公开(公告)日:2014-08-12

    申请号:US13109687

    申请日:2011-05-17

    CPC classification number: H01L33/0079 H01L33/0095

    Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

    Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上,除了存在一块停止电镀材料之外,金属层被沉积​​。 停止电镀材料被消除,并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素,然后去除衬底。 在消除各个管芯之间的半导体材料之后,将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面,在该表面上添加钝化层,然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中,去除钝化层,将所得结构翻转,并且将带扩展以分离各个模具。

    Light emitting semiconductor structure
    9.
    发明授权
    Light emitting semiconductor structure 有权
    发光半导体结构

    公开(公告)号:US08735913B2

    公开(公告)日:2014-05-27

    申请号:US13078541

    申请日:2011-04-01

    Applicant: Wu-Cheng Kuo

    Inventor: Wu-Cheng Kuo

    Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

    Abstract translation: 本发明提供一种发光半导体结构,其包括基板; 形成在基板上的第一LED芯片; 形成在第一LED芯片上的粘附层; 以及形成在所述粘合层上的第二发光二极管芯片,其中所述第二LED芯片具有电连接到所述基板的第一导线。

    Method for fabricating light emitting diode (LED) dice with wavelength conversion layers
    10.
    发明授权
    Method for fabricating light emitting diode (LED) dice with wavelength conversion layers 有权
    用波长转换层制造发光二极管(LED)晶片的方法

    公开(公告)号:US08722433B2

    公开(公告)日:2014-05-13

    申请号:US13902881

    申请日:2013-05-27

    Inventor: Jui-Kang Yen

    CPC classification number: H01L33/50 H01L33/501 H01L33/505 H01L2933/0041

    Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of mixing wavelength conversion particles in a base material to a first weight percentage, mixing reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die.

    Abstract translation: 制造发光二极管(LED)模具的方法包括以下步骤:将基材中的波长转换颗粒混合至第一重量百分比,将基材中的反射颗粒混合至第二重量百分比,固化基材以形成波长 转换层具有选定的厚度,并将波长转换层附接到管芯。

Patent Agency Ranking