Abstract:
The invention relates to a method of optical characterization, comprising a step of evaluating the doping of a substrate (SUB) using a reflected beam emanating from a light source, said method being carried out using apparatus comprising: said light source (LAS) to produce an incident beam (I) in an axis of incidence; a first detector (DET1, DET2) to measure the power of said reflected beam (R) in an axis of reflection; said axes of incidence and reflection crossing at a measurement point and forming a non-zero angle of measurement; and a polarizer (POL) disposed in the path of the incident beam (I). Furthermore, the light source (LAS) is monochromatic. The invention also envisages an ion implanter provided with said apparatus.
Abstract:
Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.
Abstract:
A method of examining thin layer structures on a surface for differences in respect of optical thickness, which method comprises the steps of: irradiating the surface with light so that the light is internally or externally reflected at the surface; imaging the reflected light on a first two-dimensional detector; sequentially or continuously scanning the incident angle and/or wavelength of the light over an angular and/or wavelength range; measuring the intensities of light reflected from different parts of the surface and impinging on different parts of the detector, at at least a number of incident angles and/or wavelengths, the intensity of light reflected from each part of the surface for each angle and/or wavelength depending on the optical thickness of the thin layer structure thereon; and determining from the detected light intensities at the different light incident angles and/or wavelengths an optical thickness image of the thin layer structures on the surface. According to the invention, part of the light reflected at said surface is detected on a second detector to determine the incident angle or wavelength of the polarized light irradiating the surface. An apparatus for carrying out the method is also disclosed.
Abstract:
A high-sensitivity reflection measurement apparatus disposed in an optical path between a light emitter and a detector of an analysis apparatus, the high-sensitivity reflection measurement apparatus comprising an incident-side optical element, wherein the incident-side optical element bends the optical path of measurement light emitted from the light emitter such that the angle of incidence of the measurement light emitted from the light emitter with respect to a sample surface under measurement is a desired angle ranging from 70 degrees inclusive to 90 degrees exclusive with respect to the direction perpendicular to the sample surface under measurement, transmits the measurement light as linearly polarized light having a desired oscillation direction, and makes the linearly polarized light incident on the sample surface under measurement; and information related to the sample surface under measurement is obtained according to light reflected from the sample surface under measurement when the linearly polarized light from the incident-side optical element is incident on the sample surface under measurement.
Abstract:
An imaging system, and method of its use, for viewing a sample surface at an inclined angle, preferably in functional combination with a sample investigating reflectometer, spectrophotometer, ellipsometer or polarimeter system; wherein the imaging system provides that a sample surface and multi-element imaging detector surface are oriented with respect to one another to meet the Scheimpflug condition, and wherein a telecentric lens system is simultaneously positioned between the sample surface and the input surface of the multi-element imaging detector such that an image of the sample surface produced by said multi-element imaging detector is both substantially in focus over the extent thereof, and such that substantially no keystone error is demonstrated in said image.
Abstract:
Provided are a concentration measuring method of an optically active substance and a concentration measuring device of an optically active substance, which can easily and accurately measure a concentration of the optically active substance in aqueous humor. The concentration measuring method of an optically active substance includes: a first step of measuring a polarization state of a first reflected light that is obtained by irradiating an aqueous humor in an eye with an incidence light which is polarized and reflecting the incidence light at an interface between the aqueous humor and a lens, in which the polarization state of the first reflected light is measured by irradiating a first incidence light such that an angle between a normal line to a point where the incidence light intersects a surface of the lens, and the incidence light is equal to or smaller than a Brewster angle; a second step of measuring a polarization state of a second reflected light by irradiating with a second incidence light such that an angle of the incidence light is equal to or larger than the Brewster angle; a third step of calculating an optical rotation of the aqueous humor with information on the polarization state of the first reflected light and information on the polarization state of the second reflected light; and a fourth step of calculating a concentration of an optically active substance in the aqueous humor from the optical rotation of the aqueous humor.
Abstract:
A tissue analyte measuring device (2) includes a light source (4) structured to emit unpolarized light toward the skin surface of a subject, and a detector assembly (8) configured to receive light reflected from the skin surface of the subject and the transcutaneous tissues of the subject, the detector assembly including a polarizing filter (12) and a number of light detector subassemblies (14). The polarizing filter is structured to filter out s-polarized light and pass only p-polarized light to light detector subassemblies. The light source is structured and positioned to emit the unpolarized light in a manner wherein the unpolarized light will exit the measuring device at a predetermined angle with respect to a normal to a light emitting plane of the measuring device, wherein the predetermined angle is an angle (the Brewster's angle) at which only s-polarized light will be reflected by the skin surface when the unpolarized light is incident thereon.
Abstract:
A polishing end point detection method is to detect a polishing end point of a workpiece having a multilayer structure. The method is performed by emitting a first light and a second light to a surface of the workpiece at a first angle of incidence and a second angle of incidence, respectively, receiving the first light and the second light reflected from the surface through a polarizing filter, performing a first analyzing process of analyzing a brightness and a saturation of the surface from the first light received, performing a second analyzing process of analyzing a brightness and a saturation of the surface from the second light received, and determining removal of the upper layer based on changes in the brightness and the saturation of the surface.
Abstract:
A method of examining thin layer structures on a surface for differences in respect of optical thickness, which method comprises the steps of: irradiating the surface with light so that the light is internally or externally reflected at the surface; imaging the reflected light on a first two-dimensional detector; sequentially or continuously scanning the incident angle and/or wavelength of the light over an angular and/or wavelength range; measuring the intensities of light reflected from different parts of the surface and impinging on different parts of the detector, at at least a number of incident angles and/or wavelengths, the intensity of light reflected from each part of the surface for each angle and/or wavelength depending on the optical thickness of the thin layer structure thereon; and determining from the detected light intensities at the different light incident angles and/or wavelengths an optical thickness image of the thin layer structures on the surface. According to the invention, part of the light reflected at said surface is detected on a second detector to determine the incident angle or wavelength of the polarized light irradiating the surface. An apparatus for carrying out the method is also disclosed.
Abstract:
A method of examining thin layer structures on a surface for differences in respect of optical thickness, which method comprises the steps of: irradiating the surface with light so that the light is internally or externally reflected at the surface; imaging the reflected light on a first two-dimensional detector; sequentially or continuously scanning the incident angle and/or wavelength of the light over an angular and/or wavelength range; measuring the intensities of light reflected from different parts of the surface and impinging on different parts of the detector, at at least a number of incident angles and/or wavelengths, the intensity of light reflected from each part of the surface for each angle and/or wavelength depending on the optical thickness of the thin layer structure thereon; and determining from the detected light intensities at the different light incident angles and/or wavelengths an optical thickness image of the thin layer structures on the surface. According to the invention, part of the light reflected at said surface is detected on a second detector to determine the incident angle or wavelength of the polarized light irradiating the surface. An apparatus for carrying out the method is also disclosed.