Abstract:
An ion implantation machine includes an enclosure that is connected to a pump device, a negatively polarized substrate-carrier that is arranged inside the enclosure, and a plasma feed device in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber provided with an ionization cell, the main chamber being provided with a gas delivery orifice, and the final section of the main chamber being provided with a head-loss component for creating a pressure drop relative to the body. Furthermore, the plasma feed device also includes an auxiliary chamber arranged beyond the final section, the auxiliary chamber opening out into the enclosure at the terminal section.
Abstract:
The invention relates to an optical probe including: a first cell C1 including a first emitter module LED1 and a first detector module D1 suitable for producing a first detection signal; a second cell C2 including a second detector module D2 suitable for producing a first monitoring signal for monitoring the first emitter module LED1; and a control circuit for producing a first measurement signal by weighting the first detection signal by means of the first monitoring signal. Furthermore, the second cell C2 has a second emitter module LED2, the second detector module D2 is suitable for producing a second detection signal, and the first detector module D1 is suitable for producing a second monitoring signal for monitoring the second emitter module LED2.
Abstract:
The invention provides a waveguide comprising a channel 12 on an optical substrate 11, the refractive index of the channel being higher than that of the substrate. The waveguide includes at least one guide layer 13 arranged on the channel, the index of said guide layer being higher than that of the substrate. In addition, the channel 12 is integrated in the substrate 11. advantageously, the waveguide further includes a covering layer 14 deposited on the guide layer 13, the index of said covering layer being lower than that of the guide layer and lower than that of the channel. The invention also provides a method of fabricating the waveguide.
Abstract:
The invention relates to a calibration device on a silicon substrate SU formed in addition to a reference level Nc by at least two distinct levels Ng, ND. These levels present distinct doping concentrations. The invention also provides a method of making the calibration device, the method including a definition step for defining at least two sections Sg, Sd distinct from a reference section Sc on a silicon substrate SU. This definition step consists in doping the sections different from the reference section at different concentrations.
Abstract:
The invention relates to a wavelength spectroscopy device comprising, on a substrate a filter cell CF constituted by two mirrors separated by a spacer membrane, the filter cell being made up of a plurality of interference filters. Furthermore, the device also comprises an emission cell CE comprising a plurality of emission sources, each of said sources being associated with one of said interference filters.
Abstract:
The invention relates to a wavelength spectroscopy device comprising, on a substrate SUB, a filter module made up of two mirrors MIR1, MIR2 that are spaced apart by a spacer membrane SP. The filter module comprises a plurality of interference filters FP1, FP2, FP3, the thickness of said spacer membrane SP being constant for any given filter and varying from one filter to another.
Abstract:
The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.
Abstract:
The present invention provides an ion implantation machine comprising: an enclosure ENV that is connected to a pump device VAC; a negatively polarized HT substrate-carrier PPS that is arranged inside said enclosure ENV; and a plasma feed device AP in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber PR provided with an ionization cell BC1, ANT1; said main chamber PR being provided with a gas delivery orifice ING; and the final section CL of said main chamber being provided with head-loss means for creating a pressure drop relative to said body AP. Furthermore, said plasma feed device AP also includes an auxiliary chamber AUX arranged beyond said final section, said auxiliary chamber opening out into said enclosure ENV at said terminal section.
Abstract:
The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.
Abstract:
The present invention relates to a high-energy secondary electron detector comprising a collector P supporting only three electrodes that are insulated from one another and that are biased relative to the collector: a first repulsion electrode A1 for repelling charges of a first predetermined sign that are to be repelled, this negatively-biased electrode being provided with at least one opening for passing electrons; a second repulsion electrode A2 for repelling charges of the opposite sign that are to be repelled, this positively-biased electrode also being provided with at least one opening for passing electrons; and a selection electrode A3, this electrode also being provided with at least one opening for passing electrons; the openings in said electrodes being in alignment along a conduction cylinder D. Furthermore, the selection electrode A3 is negatively biased. The invention also provides a method of detecting secondary electrons by means of the detector.