Machine for implanting ions in plasma immersion mode for a low-pressure method
    1.
    发明授权
    Machine for implanting ions in plasma immersion mode for a low-pressure method 有权
    用于低压法等离子体浸入式离子注入的机器

    公开(公告)号:US09534287B2

    公开(公告)日:2017-01-03

    申请号:US14117166

    申请日:2012-06-07

    Abstract: An ion implantation machine includes an enclosure that is connected to a pump device, a negatively polarized substrate-carrier that is arranged inside the enclosure, and a plasma feed device in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber provided with an ionization cell, the main chamber being provided with a gas delivery orifice, and the final section of the main chamber being provided with a head-loss component for creating a pressure drop relative to the body. Furthermore, the plasma feed device also includes an auxiliary chamber arranged beyond the final section, the auxiliary chamber opening out into the enclosure at the terminal section.

    Abstract translation: 离子注入机包括连接到泵装置的外壳,布置在外壳内部的负极化衬底载体,以及在初始部分和终端部分之间延伸的大致圆柱形主体形式的等离子体供给装置 所述装置具有设置有电离池的主室,所述主室设置有气体输送孔,并且所述主室的最后部分设置有相对于所述主体产生压降的头部损失部件。 此外,等离子体馈送装置还包括布置在最后部分之外的辅助室,辅助室在端子部分处打开到外壳中。

    OPTICAL PROBE FOR MEASURING ABSORPTION AT A PLURALITY OF WAVELENGTHS
    2.
    发明申请
    OPTICAL PROBE FOR MEASURING ABSORPTION AT A PLURALITY OF WAVELENGTHS 审中-公开
    用于在多个波长范围内测量吸收的光学探头

    公开(公告)号:US20130194576A1

    公开(公告)日:2013-08-01

    申请号:US13811106

    申请日:2011-07-18

    CPC classification number: G01N21/59 G01N21/274 G01N21/8507

    Abstract: The invention relates to an optical probe including: a first cell C1 including a first emitter module LED1 and a first detector module D1 suitable for producing a first detection signal; a second cell C2 including a second detector module D2 suitable for producing a first monitoring signal for monitoring the first emitter module LED1; and a control circuit for producing a first measurement signal by weighting the first detection signal by means of the first monitoring signal. Furthermore, the second cell C2 has a second emitter module LED2, the second detector module D2 is suitable for producing a second detection signal, and the first detector module D1 is suitable for producing a second monitoring signal for monitoring the second emitter module LED2.

    Abstract translation: 本发明涉及一种光探头,包括:第一单元C1,包括第一发射模块LED1和适于产生第一检测信号的第一检测器模块D1; 包括适于产生用于监测第一发射器模块LED1的第一监视信号的第二检测器模块D2的第二单元C2; 以及控制电路,用于通过借助于第一监视信号对第一检测信号进行加权来产生第一测量信号。 此外,第二单元C2具有第二发射极模块LED2,第二检测器模块D2适于产生第二检测信号,第一检测器模块D1适用于产生用于监视第二发射模块LED2的第二监视信号。

    Waveguide comprising a channel on an optical substrate
    3.
    发明授权
    Waveguide comprising a channel on an optical substrate 有权
    波导包括光学基板上的通道

    公开(公告)号:US07756377B2

    公开(公告)日:2010-07-13

    申请号:US10450671

    申请日:2001-12-14

    CPC classification number: G02B6/122 G02B6/1347 G02B2006/121

    Abstract: The invention provides a waveguide comprising a channel 12 on an optical substrate 11, the refractive index of the channel being higher than that of the substrate. The waveguide includes at least one guide layer 13 arranged on the channel, the index of said guide layer being higher than that of the substrate. In addition, the channel 12 is integrated in the substrate 11. advantageously, the waveguide further includes a covering layer 14 deposited on the guide layer 13, the index of said covering layer being lower than that of the guide layer and lower than that of the channel. The invention also provides a method of fabricating the waveguide.

    Abstract translation: 本发明提供了一种波导,其包括在光学基板11上的通道12,该通道的折射率高于基板的折射率。 波导包括布置在通道上的至少一个引导层13,所述引导层的折射率高于基底的折射率。 此外,通道12集成在基板11中。有利地,波导还包括沉积在引导层13上的覆盖层14,所述覆盖层的折射率低于引导层的折射率,并且低于引导层13的折射率。 渠道。 本发明还提供一种制造波导的方法。

    Calibrating Device On A Silicon Substrate
    4.
    发明申请
    Calibrating Device On A Silicon Substrate 审中-公开
    硅衬底上的校准装置

    公开(公告)号:US20080016941A1

    公开(公告)日:2008-01-24

    申请号:US11630309

    申请日:2005-06-23

    CPC classification number: H01L22/34

    Abstract: The invention relates to a calibration device on a silicon substrate SU formed in addition to a reference level Nc by at least two distinct levels Ng, ND. These levels present distinct doping concentrations. The invention also provides a method of making the calibration device, the method including a definition step for defining at least two sections Sg, Sd distinct from a reference section Sc on a silicon substrate SU. This definition step consists in doping the sections different from the reference section at different concentrations.

    Abstract translation: 本发明涉及除了基准电平Nc至少两个不同电平Ng,ND之外形成的硅衬底SU上的校准装置。 这些水平呈现不同的掺杂浓度。 本发明还提供了一种制造校准装置的方法,所述方法包括定义步骤,用于限定与硅衬底SU上的参考部分Sc不同的至少两个部分Sg,Sd。 该定义步骤在不同浓度掺杂不同于参考部分的部分。

    OPTICAL SPECTROSCOPY DEVICE INCLUDING A PLURALITY OF EMISSION SOURCES
    5.
    发明申请
    OPTICAL SPECTROSCOPY DEVICE INCLUDING A PLURALITY OF EMISSION SOURCES 审中-公开
    光学光谱设备,包括排放源的多样性

    公开(公告)号:US20110261365A1

    公开(公告)日:2011-10-27

    申请号:US13133934

    申请日:2009-12-10

    CPC classification number: G01J3/26 G01J3/02 G01J3/0256 G01J3/10 G01J3/45

    Abstract: The invention relates to a wavelength spectroscopy device comprising, on a substrate a filter cell CF constituted by two mirrors separated by a spacer membrane, the filter cell being made up of a plurality of interference filters. Furthermore, the device also comprises an emission cell CE comprising a plurality of emission sources, each of said sources being associated with one of said interference filters.

    Abstract translation: 本发明涉及一种波长分析装置,在基板上包括由间隔膜隔开的两个反射镜构成的滤光单元CF,滤光单元由多个干涉滤光片构成。 此外,该装置还包括包括多个发射源的发射单元CE,每个所述源与所述干扰滤波器之一相关联。

    WAVELENGTH SPECTROSCOPY DEVICE WITH INTEGRATED FILTERS
    6.
    发明申请
    WAVELENGTH SPECTROSCOPY DEVICE WITH INTEGRATED FILTERS 审中-公开
    具有集成滤波器的波长光谱设备

    公开(公告)号:US20110049340A1

    公开(公告)日:2011-03-03

    申请号:US12863731

    申请日:2009-01-20

    CPC classification number: G01J3/26

    Abstract: The invention relates to a wavelength spectroscopy device comprising, on a substrate SUB, a filter module made up of two mirrors MIR1, MIR2 that are spaced apart by a spacer membrane SP. The filter module comprises a plurality of interference filters FP1, FP2, FP3, the thickness of said spacer membrane SP being constant for any given filter and varying from one filter to another.

    Abstract translation: 本发明涉及一种波长分析装置,在基板SUB上包括由隔离膜SP隔开的两个反射镜MIR1,MIR2构成的滤光模块。 滤波器模块包括多个干涉滤光器FP1,FP2,FP3,所述间隔膜SP的厚度对于任何给定的滤光器是恒定的,并且从一个滤光片到另一滤光片。

    Dose measurement device for plasma-immersion ion implantation
    7.
    发明授权
    Dose measurement device for plasma-immersion ion implantation 有权
    用于等离子体浸没离子注入的剂量测量装置

    公开(公告)号:US08895945B2

    公开(公告)日:2014-11-25

    申请号:US13701291

    申请日:2011-06-01

    Abstract: The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.

    Abstract translation: 本发明涉及一种用于离子注入的剂量测量装置,该装置包括用于估计注入电流的模块CUR,二次电子检测器DSE和用于通过将所述注入电流和 来自所述二次电子检测器的电流。 此外,所述高能二次电子检测器包括:收集器COL,P,其支承正好三个相互绝缘的电极:第一斥力电极G1,A1,T1,用于排斥预定符号的待排斥电荷,所述电极设置在 用于通过电子的至少一个孔口; 第二排斥电极G2,A2,T2,用于排斥相反符号的要排斥的电荷,所述电极还设置有至少一个用于通过电子的孔口; 以及选择电极G3,A3,T3,该电极还设置有用于使电子通过的至少一个孔。

    MACHINE FOR IMPLANTING IONS IN PLASMA IMMERSION MODE FOR A LOW-PRESSURE METHOD
    8.
    发明申请
    MACHINE FOR IMPLANTING IONS IN PLASMA IMMERSION MODE FOR A LOW-PRESSURE METHOD 有权
    用于在低压方法的等离子体浸没模式中进行离子注入的机器

    公开(公告)号:US20140102370A1

    公开(公告)日:2014-04-17

    申请号:US14117166

    申请日:2012-06-07

    Abstract: The present invention provides an ion implantation machine comprising: an enclosure ENV that is connected to a pump device VAC; a negatively polarized HT substrate-carrier PPS that is arranged inside said enclosure ENV; and a plasma feed device AP in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber PR provided with an ionization cell BC1, ANT1; said main chamber PR being provided with a gas delivery orifice ING; and the final section CL of said main chamber being provided with head-loss means for creating a pressure drop relative to said body AP. Furthermore, said plasma feed device AP also includes an auxiliary chamber AUX arranged beyond said final section, said auxiliary chamber opening out into said enclosure ENV at said terminal section.

    Abstract translation: 本发明提供一种离子注入机,包括:连接到泵装置VAC的外壳ENV; 设置在所述外壳ENV内的负极化HT衬底载体PPS; 以及在初始部分和端子部分之间延伸的大致圆筒形形式的等离子体供给装置AP,该装置具有设置有电离单元BC1,ANT1的主室PR; 所述主室PR设置有气体输送孔ING; 并且所述主室的最后部分CL设置有相对于所述主体AP产生压降的头部损失装置。 此外,所述等离子体馈送装置AP还包括布置在所述最后部分之外的辅助室AUX,所述辅助室在所述端子部分处打开到所述外壳ENV中。

    DOSE MEASUREMENT DEVICE FOR PLASMA-IMMERSION ION IMPLANTATION
    9.
    发明申请
    DOSE MEASUREMENT DEVICE FOR PLASMA-IMMERSION ION IMPLANTATION 有权
    用于等离子体离子植入的剂量测量装置

    公开(公告)号:US20130153779A1

    公开(公告)日:2013-06-20

    申请号:US13701291

    申请日:2011-06-01

    Abstract: The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.

    Abstract translation: 本发明涉及一种用于离子注入的剂量测量装置,该装置包括用于估计注入电流的模块CUR,二次电子检测器DSE和用于通过将所述注入电流和 来自所述二次电子检测器的电流。 此外,所述高能二次电子检测器包括:收集器COL,P,其支承正好三个相互绝缘的电极:第一斥力电极G1,A1,T1,用于排斥预定符号的待排斥电荷,所述电极设置在 用于通过电子的至少一个孔口; 第二排斥电极G2,A2,T2,用于排斥相反符号的要排斥的电荷,所述电极还设置有至少一个用于通过电子的孔口; 以及选择电极G3,A3,T3,该电极还设置有用于使电子通过的至少一个孔。

    DETECTOR FOR ENERGETIC SECONDARY ELECTRONS
    10.
    发明申请
    DETECTOR FOR ENERGETIC SECONDARY ELECTRONS 审中-公开
    能量二次电子探测器

    公开(公告)号:US20130134321A1

    公开(公告)日:2013-05-30

    申请号:US13701264

    申请日:2011-06-01

    Abstract: The present invention relates to a high-energy secondary electron detector comprising a collector P supporting only three electrodes that are insulated from one another and that are biased relative to the collector: a first repulsion electrode A1 for repelling charges of a first predetermined sign that are to be repelled, this negatively-biased electrode being provided with at least one opening for passing electrons; a second repulsion electrode A2 for repelling charges of the opposite sign that are to be repelled, this positively-biased electrode also being provided with at least one opening for passing electrons; and a selection electrode A3, this electrode also being provided with at least one opening for passing electrons; the openings in said electrodes being in alignment along a conduction cylinder D. Furthermore, the selection electrode A3 is negatively biased. The invention also provides a method of detecting secondary electrons by means of the detector.

    Abstract translation: 高能二次电子检测器本发明涉及一种高能二次电子检测器,它包括仅支持彼此绝缘并且相对于集电极偏置的三个电极的集电极P:用于排斥第一预定符号的电荷的第一排斥电极A1, 要被排斥,该负偏压电极设置有用于通过电子的至少一个开口; 第二斥力电极A2,用于排斥相反符号的要被排斥的电荷,该正偏置电极还设置有用于使电子通过的至少一个开口; 和选择电极A3,该电极还设置有用于使电子通过的至少一个开口; 所述电极中的开口沿着导电圆柱体D对准。此外,选择电极A3被负偏压。 本发明还提供了一种通过检测器检测二次电子的方法。

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