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17 条记录 (耗时 0.012 秒)

    Semiconductor laser having Fabry-Perot resonator
    1.
    发明授权
    Semiconductor laser having Fabry-Perot resonator 有权
    半导体激光器具有法布里 - 珀罗谐振器

    公开(公告)号：US07627010B2

    公开(公告)日：2009-12-01

    申请号：US11854653

    申请日：2007-09-13

    申请人： Tetsuya Yagi

    发明人： Tetsuya Yagi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0284 ,  H01S5/06804 ,  H01S5/34306

    摘要： A semiconductor laser has a reflectance of the front facet coating film or the rear facet coating film dramatically that decreases at wavelengths greater than a predetermined wavelength. This characteristic causes the loss of the semiconductor laser to dramatically increase at wavelengths greater than the predetermined wavelength. As a result, the oscillation wavelength of the semiconductor laser at high temperatures is clamped to around the predetermined wavelength.

    摘要翻译： 半导体激光器具有显着的前面小面涂膜或后面涂膜的反射率，其在大于预定波长的波长处降低。 该特性使得半导体激光器的损耗在大于预定波长的波长处显着增加。 结果，半导体激光器在高温下的振荡波长被夹持在预定波长附近。

    Surface emitting semiconductor laser device
    4.
    发明申请
    Surface emitting semiconductor laser device 有权
    表面发射半导体激光器件

    公开(公告)号：US20030043871A1

    公开(公告)日：2003-03-06

    申请号：US10214787

    申请日：2002-08-06

    发明人： Natsumi Ueda ,  Noriyuki Yokouchi ,  Tatsuyuki Shinagawa

    IPC分类号： H01S005/00 ,  H01S003/08

    CPC分类号： H01S5/18311 ,  H01S5/0284 ,  H01S5/1221 ,  H01S2301/166

    摘要： A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.

    摘要翻译： 氧化Al电流限制结构的表面发射半导体激光器件具有基本横向模式的谐振波长，该谐振波长被设定为小于或等于激光装置在特定温度下的峰值增益波长。 表面发射半导体激光器件以单横模式发射。

    Semiconductor laser device having an active layer and a resonator having a single reflector or pair of reflectors
    5.
    发明授权
    Semiconductor laser device having an active layer and a resonator having a single reflector or pair of reflectors 失效
    具有有源层和谐振器的半导体激光器件具有单个反射器或一对反射器

    公开(公告)号：US5497389A

    公开(公告)日：1996-03-05

    申请号：US265875

    申请日：1994-06-27

    申请人： Akihiko Kasukawa ,  Norihiro Iwai

    发明人： Akihiko Kasukawa ,  Norihiro Iwai

    IPC分类号： H01S3/131 ,  H01S5/028 ,  H01S5/343 ,  H01S3/10

    CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S3/1317 ,  H01S5/0284 ,  H01S5/34306

    摘要： There are provided a semiconductor laser device equipped with improved reflectors at the opposite ends of the resonator and capable of preventing any rise in the laser oscillation threshold current and reduction in the quantum efficiency due to temperature rise and a laser module comprising such a semiconductor laser device that operates effectively and efficiently at high temperature and can be downsized at reduced cost. The reflector 23 or 26 disposed at either end of the resonator 22 of a semiconductor laser device 21 according to the invention have a reflectivity that increases with the oscillation wavelength of the device within a range (.lambda..sub.1 to .lambda..sub.1) as a function of the operating temperature of the device. A laser module 31 according to the invention comprises such a semiconductor laser device 21 as a principal component. The semiconductor laser device 21 and therefore the laser module 31 comprising such a device have an improved temperature dependency because its reflector loss is reduced as the device temperature rises.

    摘要翻译： 提供了一种半导体激光装置，其在谐振器的相对端配备有改进的反射器，并且能够防止激光振荡阈值电流的任何上升以及由于温度升高而导致的量子效率的降低以及包括这种半导体激光装置的激光器模块 在高温下有效高效地运转，可以降低成本。 设置在根据本发明的半导体激光器装置21的谐振器22的任一端处的反射器23或26的反射率随着器件的振荡波长随着作为功率的范围（λ1至λ1）而增加 设备的工作温度。 根据本发明的激光器模块31包括作为主要部件的这种半导体激光器装置21。 因此，半导体激光装置21，因此包括这种装置的激光模块31具有改善的温度依赖性，因为其反射器损耗随着装置温度升高而降低。

    SEMICONDUCTOR LASER HAVING FABRY-PEROT RESONATOR
    6.
    发明申请
    SEMICONDUCTOR LASER HAVING FABRY-PEROT RESONATOR 有权
    半导体激光器具有织带 - 共振器

    公开(公告)号：US20080240198A1

    公开(公告)日：2008-10-02

    申请号：US11854653

    申请日：2007-09-13

    申请人： Tetsuya Yagi

    发明人： Tetsuya Yagi

    IPC分类号： H01S3/08

    CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0284 ,  H01S5/06804 ,  H01S5/34306

    摘要： A semiconductor laser of the present invention is constructed such that the reflectance of the front facet coating film or the rear facet coating film dramatically decreases at wavelengths greater than a predetermined wavelength. This causes the loss of the semiconductor laser to dramatically increase at wavelengths greater than the predetermined wavelength. As a result, the oscillation wavelength of the semiconductor laser at high temperatures is clamped to around the predetermined wavelength.

    摘要翻译： 本发明的半导体激光器被构造成使得前面小面涂膜或后面涂膜的反射率在大于预定波长的波长处显着降低。 这导致半导体激光器的损耗在大于预定波长的波长处显着增加。 结果，半导体激光器在高温下的振荡波长被夹持在预定波长附近。

    DFB laser with ar coating selected to provide wide temperature range of operation
    7.
    发明授权
    DFB laser with ar coating selected to provide wide temperature range of operation 有权
    DFB激光器采用ar涂层选择，提供宽温度范围的操作

    公开(公告)号：US07103081B2

    公开(公告)日：2006-09-05

    申请号：US10686518

    申请日：2003-10-16

    申请人： Toshio Nomaguchi

    发明人： Toshio Nomaguchi

    IPC分类号： H01S5/00 ,  H01S3/08

    CPC分类号： H01S5/141 ,  H01S5/0284 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/146

    摘要： This invention provides a semiconductor laser that enables to oscillate at a wavelength defined by a Bragg grating formed therein in a wide temperature range without any temperature-controlling. The semiconductor laser comprises an active region and the Bragg grating formed with the active region. A light-emitting surface and a light-reflecting surface are formed so as to sandwiches the active region. The light-emitting surface has an anti-reflective coating, the reflectivity of which is so adjusted that the minimum thereof is at the wavelength where the gain attributed to the FP modes is the maximum and is smaller than 0.3%.

    摘要翻译： 本发明提供一种半导体激光器，其能够在宽的温度范围内由布拉格光栅所限定的波长振荡，而无需任何温度控制。 半导体激光器包括有源区和形成有活性区的布拉格光栅。 形成发光面和光反射面，以夹持有源区。 发光面具有抗反射涂层，其反射率被调整为使得其最小值处于FP模式的增益最大且小于0.3％的波长处。

    Surface emitting semiconductor laser device
    8.
    发明授权
    Surface emitting semiconductor laser device 有权
    表面发射半导体激光器件

    公开(公告)号：US06829274B2

    公开(公告)日：2004-12-07

    申请号：US10214787

    申请日：2002-08-06

    申请人： Natsumi Ueda ,  Noriyuki Yokouchi ,  Tatsuyuki Shinagawa

    发明人： Natsumi Ueda ,  Noriyuki Yokouchi ,  Tatsuyuki Shinagawa

    IPC分类号： H01S500

    CPC分类号： H01S5/18311 ,  H01S5/0284 ,  H01S5/1221 ,  H01S2301/166

    摘要： A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.

    摘要翻译： 氧化Al电流限制结构的表面发射半导体激光器件具有基本横向模式的谐振波长，该谐振波长被设定为小于或等于激光装置在特定温度下的峰值增益波长。 表面发射半导体激光器件以单横模式发射。