公开(公告)号：US07391217B2

公开(公告)日：2008-06-24

申请号：US11512604

申请日：2006-08-29

申请人： Michael H. Linse ,  Phillip R. Hays ,  Gary J. Oliver ,  Thomas V. Scrivner ,  Jimmy Jack Jewell

发明人： Michael H. Linse ,  Phillip R. Hays ,  Gary J. Oliver ,  Thomas V. Scrivner ,  Jimmy Jack Jewell

IPC分类号： G01V3/08 ,  G01V3/10

CPC分类号： G01V3/101

摘要： Metal detectors include a sense coil coupled to an analog to digital converter that produces a numeric representation of an electrical signal associated with a conductive object situated in an active region of a sense coil. The numeric representation is processed to obtain a noise contribution associated with random noise, fixed pattern noise, and/or thermal drift. The noise is subtracted from the numeric representation to produce a numeric difference. The numeric difference includes contributions associated with conductive objects located in a sense volume defined by the sense coil. The numeric difference (or the numeric representation) can be digitally processed with, for example, a matched filter to enhance the conductive object contribution. The matched filter can be based on a measured sense coil speed or can be based on typical sense coil speeds.

摘要翻译： 金属检测器包括耦合到模数转换器的感测线圈，其产生与位于感测线圈的有源区域中的导电物体相关联的电信号的数字表示。 处理数字表示以获得与随机噪声，固定模式噪声和/或热漂移相关联的噪声贡献。 从数字表示中减去噪声，产生数值差。 数字差异包括与由感测线圈限定的感测体积中的导电物体相关联的贡献。 数字差异（或数字表示）可以用例如匹配滤波器进行数字处理，以增强导电物体的贡献。 匹配滤波器可以基于测量的感测线圈速度，或者可以基于典型的感测线圈速度。

公开(公告)号：US20080054905A1

公开(公告)日：2008-03-06

申请号：US11512604

申请日：2006-08-29

申请人： Michael H. Linse ,  Phillip R. Hays ,  Gary J. Oliver ,  Thomas V. Scrivner ,  Jimmy Jack Jewell

发明人： Michael H. Linse ,  Phillip R. Hays ,  Gary J. Oliver ,  Thomas V. Scrivner ,  Jimmy Jack Jewell

IPC分类号： G01V3/08 ,  G01V3/10

CPC分类号： G01V3/101

摘要： Metal detectors include a sense coil coupled to an analog to digital converter that produces a numeric representation of an electrical signal associated with a conductive object situated in an active region of a sense coil. The numeric representation is processed to obtain a noise contribution associated with random noise, fixed pattern noise, and/or thermal drift. The noise is subtracted from the numeric representation to produce a numeric difference. The numeric difference includes contributions associated with conductive objects located in a sense volume defined by the sense coil. The numeric difference (or the numeric representation) can be digitally processed with, for example, a matched filter to enhance the conductive object contribution. The matched filter can be based on a measured sense coil speed or can be based on typical sense coil speeds.

摘要翻译： 金属检测器包括耦合到模数转换器的感测线圈，其产生与位于感测线圈的有源区域中的导电物体相关联的电信号的数字表示。 处理数字表示以获得与随机噪声，固定模式噪声和/或热漂移相关联的噪声贡献。 从数字表示中减去噪声，产生数值差。 数字差异包括与由感测线圈限定的感测体积中的导电物体相关联的贡献。 数字差异（或数字表示）可以用例如匹配滤波器进行数字处理，以增强导电物体的贡献。 匹配滤波器可以基于测量的感测线圈速度，或者可以基于典型的感测线圈速度。

公开(公告)号：US20060062266A1

公开(公告)日：2006-03-23

申请号：US11046735

申请日：2005-02-01

申请人： Jack Jewell

发明人： Jack Jewell

IPC分类号： H01S5/00

CPC分类号： H01S5/0612 ,  H01S5/02461 ,  H01S5/0284 ,  H01S5/06804 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18322 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/3095

摘要： A novel approach for providing temperature compensation for semiconductor lasers is disclosed. This approach utilizes reflectivity characteristics in the at least one of the mirrors of the semiconductor laser to provide temperature compensation to the device.

公开(公告)号：US20050232323A1

公开(公告)日：2005-10-20

申请号：US11090260

申请日：2005-03-28

申请人： Jack Jewell

发明人： Jack Jewell

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3235 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/343 ,  H01S5/34306 ,  H01S2302/00

摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 μm or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

公开(公告)号：US07079560B2

公开(公告)日：2006-07-18

申请号：US10661582

申请日：2003-09-15

申请人： Jack Jewell

发明人： Jack Jewell

IPC分类号： H01S5/00

CPC分类号： H01S5/18355 ,  G02B3/00 ,  H01L33/105 ,  H01S5/0042 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18372 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/2215 ,  H04L67/34 ,  H04L69/329

摘要： A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

摘要翻译： 提供具有横向氧化屏障的导电元件用于控制半导体器件如激光器，垂直腔表面发射激光器和发光二极管中的横向氧化工艺。 氧化屏障是通过改变初始接受氧化的一层或多层形成的。 氧化屏障正下方的材料质量可能被保留。 相关的应用包括在非GaAs衬底和GaAs衬底上形成垂直腔表面发射激光器。