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    Method of producing semiconductor optical device
    1.
    发明授权
    Method of producing semiconductor optical device 失效
    制造半导体光学器件的方法

    公开(公告)号：US07955880B2

    公开(公告)日：2011-06-07

    申请号：US12481870

    申请日：2009-06-10

    申请人： Toshio Nomaguchi ,  Tetsuya Hattori ,  Kazunori Fujimoto

    发明人： Toshio Nomaguchi ,  Tetsuya Hattori ,  Kazunori Fujimoto

    IPC分类号： H01L21/00

    CPC分类号： H01S5/2231 ,  H01S5/2214 ,  H01S5/3235 ,  H01S2304/04

    摘要： A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the stacked semiconductor layer, the silicon oxide film having a predetermined film stress and a predetermined thickness; a third step of forming a strip-shaped groove in the silicon oxide film by etching the silicon oxide film, using a resist pattern formed on the silicon oxide film, until a surface of the stacked semiconductor layer is exposed; and a fourth step of growing a second III-V group compound semiconductor layer in the groove using the silicon oxide film as a selective mask.

    摘要翻译： 一种制造半导体光学器件的方法包括：在衬底上生长包括用于有源层的第一III-V族化合物半导体层的堆叠半导体层的第一步骤; 在叠层半导体层上形成氧化硅膜的第二步骤，具有预定膜应力和预定厚度的氧化硅膜; 第三步骤，通过使用形成在氧化硅膜上的抗蚀图案，通过蚀刻氧化硅膜在氧化硅膜上形成条形槽，直到层叠半导体层的表面露出为止; 以及使用氧化硅膜作为选择性掩模在槽内生长第二III-V族化合物半导体层的第四步骤。

    Semiconductor laser and method of making the same
    2.
    发明申请
    Semiconductor laser and method of making the same 有权
    半导体激光器及其制作方法

    公开(公告)号：US20090141764A1

    公开(公告)日：2009-06-04

    申请号：US12289709

    申请日：2008-10-31

    申请人： Hideki Yagi ,  Toshio Nomaguchi ,  Kenji Hiratsuka

    发明人： Hideki Yagi ,  Toshio Nomaguchi ,  Kenji Hiratsuka

    IPC分类号： H01S5/22 ,  H01L21/02

    CPC分类号： H01S5/2231 ,  H01S5/0425 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/222

    摘要： In the method of making a semiconductor laser, a semiconductor region is grown on an active layer, and a part of the semiconductor region is etched to form a ridge structure. An insulating film is formed over the ridge structure, and a resin layer of photosensitive material is formed to bury the ridge structure. A cured resin portion and an uncured resin portion are formed in the resin layer by performing lithographic exposure of the resin layer, and the uncured resin portion is on the top of the ridge structure. The uncured resin portion is removed to form a dent which is provided on the top of the ridge structure. An overall surface of the cured resin portion and dent is etched to form an etched resin layer. An opening is formed in the etched resin layer by thinning the cured resin portion, and a part of the insulating film is exposed in the opening of the etched resin layer. The part of the insulating film is etched using the etched resin layer as a mask to form an opening in the insulating film. An electrode is formed over the ridge structure and the etched resin layer.

    摘要翻译： 在制造半导体激光器的方法中，半导体区域在有源层上生长，并且半导体区域的一部分被蚀刻以形成脊结构。 在脊结构上形成绝缘膜，形成感光材料的树脂层以埋设脊结构。 通过进行树脂层的光刻曝光，在树脂层中形成固化树脂部分和未固化的树脂部分，未固化的树脂部分在脊部结构的顶部。 去除未固化的树脂部分以形成设置在脊结构的顶部上的凹陷。 将固化的树脂部分和凹陷的整个表面蚀刻以形成蚀刻的树脂层。 通过使固化的树脂部分变薄，在蚀刻的树脂层中形成开口，并且绝缘膜的一部分暴露在蚀刻的树脂层的开口中。 使用蚀刻树脂层作为掩模来蚀刻绝缘膜的一部分，以在绝缘膜中形成开口。 在脊结构和蚀刻树脂层上形成电极。

    DFB laser with ar coating selected to provide wide temperature range of operation
    3.
    发明授权
    DFB laser with ar coating selected to provide wide temperature range of operation 有权
    DFB激光器采用ar涂层选择，提供宽温度范围的操作

    公开(公告)号：US07103081B2

    公开(公告)日：2006-09-05

    申请号：US10686518

    申请日：2003-10-16

    申请人： Toshio Nomaguchi

    发明人： Toshio Nomaguchi

    IPC分类号： H01S5/00 ,  H01S3/08

    CPC分类号： H01S5/141 ,  H01S5/0284 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/146

    摘要： This invention provides a semiconductor laser that enables to oscillate at a wavelength defined by a Bragg grating formed therein in a wide temperature range without any temperature-controlling. The semiconductor laser comprises an active region and the Bragg grating formed with the active region. A light-emitting surface and a light-reflecting surface are formed so as to sandwiches the active region. The light-emitting surface has an anti-reflective coating, the reflectivity of which is so adjusted that the minimum thereof is at the wavelength where the gain attributed to the FP modes is the maximum and is smaller than 0.3%.

    摘要翻译： 本发明提供一种半导体激光器，其能够在宽的温度范围内由布拉格光栅所限定的波长振荡，而无需任何温度控制。 半导体激光器包括有源区和形成有活性区的布拉格光栅。 形成发光面和光反射面，以夹持有源区。 发光面具有抗反射涂层，其反射率被调整为使得其最小值处于FP模式的增益最大且小于0.3％的波长处。

    Method of fabricating semiconductor optical device
    4.
    发明授权
    Method of fabricating semiconductor optical device 有权
    制造半导体光学器件的方法

    公开(公告)号：US07553774B2

    公开(公告)日：2009-06-30

    申请号：US12068558

    申请日：2008-02-07

    申请人： Toshio Nomaguchi

    发明人： Toshio Nomaguchi

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/933 ,  H01L2924/00

    摘要： In a method of fabricating a semiconductor optical device, insulating structures for an alignment mark for use in electron beam exposure are formed on a primary surface of a first group III-V semiconductor region. After forming the insulating structures, a second group III-V semiconductor region is grown on the first group III-V semiconductor region to form an epitaxial wafer. The height of the insulating structures is larger than thickness of the second group III-V semiconductor region. After forming the second group III-V semiconductor region, alignment for the electron beam exposure is performed. After the alignment, a resist is exposed to an electron beam to form a resist mask. The resist mask has a pattern for a diffraction grating, and the resist is on the epitaxial wafer.

    摘要翻译： 在制造半导体光学器件的方法中，在第一组III-V半导体区域的主表面上形成用于电子束曝光的用于对准标记的绝缘结构。 在形成绝缘结构之后，在第一组III-V半导体区域上生长第二组III-V半导体区域以形成外延晶片。 绝缘结构的高度大于第二组III-V半导体区域的厚度。 在形成第二组III-V半导体区域之后，进行电子束曝光的对准。 在对准之后，将抗蚀剂暴露于电子束以形成抗蚀剂掩模。 抗蚀剂掩模具有用于衍射光栅的图案，并且抗蚀剂在外延晶片上。

    Semiconductor laser
    5.
    发明申请
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：US20050018741A1

    公开(公告)日：2005-01-27

    申请号：US10686518

    申请日：2003-10-16

    申请人： Toshio Nomaguchi

    发明人： Toshio Nomaguchi

    IPC分类号： H01S5/04 ,  H01S3/08 ,  H01S5/028 ,  H01S5/12 ,  H01S5/14

    CPC分类号： H01S5/141 ,  H01S5/0284 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/146

    摘要： This invention provides a semiconductor laser that enables to oscillate at a wavelength defined by a Gragg grating formed therein in a wide temperature range without any temperature-controlling. The semiconductor laser comprises an active region and the Bragg grating formed with the active region. A light-emitting surface and a light-reflecting surface are formed so as to sandwiches the active region. The light-emitting surface has an anti-reflective coating, the reflectivity of which is so adjusted that the minimum thereof is at the wavelength where the gain attributed to the FP modes is the maximum and is smaller than 0.3%.

    摘要翻译： 本发明提供了一种半导体激光器，其能够在宽的温度范围内由其中形成的格雷格光栅所限定的波长振荡，而无需任何温度控制。 半导体激光器包括有源区和形成有活性区的布拉格光栅。 形成发光面和光反射面，以夹持有源区。 发光面具有抗反射涂层，其反射率被调整为使得其最小值处于FP模式的增益最大且小于0.3％的波长处。

    Optical module installing optical device with identifying mark visually inspected after assembly thereof
    6.
    发明授权
    Optical module installing optical device with identifying mark visually inspected after assembly thereof 有权
    安装光学装置的光学模块，其组装之后具有目视检查的识别标记

    公开(公告)号：US08610148B2

    公开(公告)日：2013-12-17

    申请号：US12892999

    申请日：2010-09-29

    申请人： Toshio Nomaguchi

    发明人： Toshio Nomaguchi

    IPC分类号： H01L33/00 ,  H01S5/02

    CPC分类号： H01S5/02212 ,  H01L33/20 ,  H01L33/58 ,  H01S5/0014 ,  H01S5/12 ,  H01S5/2275

    摘要： An optical module is described, where the optical module installs an optical device whose identification mark is able to be distinguished even after the optical device is installed in the optical module. The identifying mark of the optical device is formed in a position able to be inspected from the direction of the normal line of the light-emitting facet of the optical device. Accordingly, the identifying mark becomes able to be identified through the lens after the optical device is installed in the package of the optical module.

    摘要翻译： 描述了光学模块，其中光学模块安装光学装置，其识别标记即使在光学装置安装在光学模块中之后也能够被区分。 光学装置的识别标记形成在能够从光学装置的发光面的法线方向检查的位置。 因此，在将光学装置安装在光学模块的封装中之后，能够通过透镜识别识别标记。

    Method for producing semiconductor optical device
    7.
    发明授权
    Method for producing semiconductor optical device 有权
    半导体光学元件的制造方法

    公开(公告)号：US08038893B2

    公开(公告)日：2011-10-18

    申请号：US12081249

    申请日：2008-04-14

    申请人： Toshio Nomaguchi

    发明人： Toshio Nomaguchi

    IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： H01L21/02057

    摘要： To grasp a removable particle contamination and appropriately removing a particle contamination exposing from a surface of a semiconductor layer, this production method of the semiconductor optical device includes a surface treatment step in which particle contaminations removed from a surface of a cap layer 5 by etching are limited to particle contaminations A1, C2 higher than the thickness of a resist layer 22 formed on the surface of the cap layer 5. Therefore, the heights of removable particle contaminations can be preliminarily grasped based on the thickness of the resist layer 22 formed, whereby the particle contaminations exposing from the surface of the cap layer 5 can be appropriately removed by etching just enough. By repeating steps S11-S17 while changing the thickness of the resist layer 22, it is feasible to prevent unnecessary etching of a wafer and to remove the particle contaminations more completely.

    摘要翻译： 为了掌握可去除的颗粒污染并适当地去除从半导体层的表面暴露的颗粒污染物，该半导体光学器件的制造方法包括表面处理步骤，其中通过蚀刻从盖层5的表面除去的颗粒污染物为 限于比形成在盖层5的表面上的抗蚀剂层22的厚度高的颗粒污染物A1，C2。因此，可以基于形成的抗蚀剂层22的厚度预先掌握可去除的颗粒污染物的高度，由此 从盖层5的表面露出的颗粒污染物可以通过恰好足够的蚀刻适当地除去。 通过在改变抗蚀剂层22的厚度的同时重复步骤S11-S17，可以防止不必要的晶片蚀刻和更完全地去除颗粒污染物。

    METHOD OF PRODUCING SEMICONDUCTOR OPTICAL DEVICE
    9.
    发明申请
    METHOD OF PRODUCING SEMICONDUCTOR OPTICAL DEVICE 失效
    生产半导体光学器件的方法

    公开(公告)号：US20090317929A1

    公开(公告)日：2009-12-24

    申请号：US12481870

    申请日：2009-06-10

    申请人： Toshio Nomaguchi ,  Tetsuya Hattori ,  Kazunori Fujimoto

    发明人： Toshio Nomaguchi ,  Tetsuya Hattori ,  Kazunori Fujimoto

    IPC分类号： H01L33/00

    CPC分类号： H01S5/2231 ,  H01S5/2214 ,  H01S5/3235 ,  H01S2304/04

    摘要： A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the stacked semiconductor layer, the silicon oxide film having a predetermined film stress and a predetermined thickness; a third step of forming a strip-shaped groove in the silicon oxide film by etching the silicon oxide film, using a resist pattern formed on the silicon oxide film, until a surface of the stacked semiconductor layer is exposed; and a fourth step of growing a second III-V group compound semiconductor layer in the groove using the silicon oxide film as a selective mask.

    摘要翻译： 一种制造半导体光学器件的方法包括：在衬底上生长包括用于有源层的第一III-V族化合物半导体层的堆叠半导体层的第一步骤; 在叠层半导体层上形成氧化硅膜的第二步骤，具有预定膜应力和预定厚度的氧化硅膜; 第三步骤，通过使用形成在氧化硅膜上的抗蚀图案，通过蚀刻氧化硅膜在氧化硅膜上形成条形槽，直到层叠半导体层的表面露出为止; 以及使用氧化硅膜作为选择性掩模在槽内生长第二III-V族化合物半导体层的第四步骤。