Fluid cooled inverter
    1.
    发明授权

    公开(公告)号:US11967899B2

    公开(公告)日:2024-04-23

    申请号:US17191805

    申请日:2021-03-04

    Abstract: A compact inverter system includes a bus bar. The bus bar includes a terminal for connection to a positive terminal of a DC voltage supply. The compact inverter also includes a heat sink, a first transistor, and a second transistor. The first transistor has first and second terminals between which current is transmitted when the first transistor is activated, and a first gate terminal controlling the first transistor. The first terminal of the first transistor is thermally and electrically connected to the bus bar. The second transistor has first and second terminals between which current is transmitted when the second transistor is activated, and a second gate terminal controlling the second transistor. The first terminal of the second transistor is thermally and electrically connected to the heat sink. The first and second transistors are positioned between the bus bar and the heat sink. The first transistor is positioned between the second transistor and the bus bar. The second transistor is positioned between the first transistor and the heat sink.

    Multiple-switch types hybrid PEBB power converter

    公开(公告)号:US11831250B2

    公开(公告)日:2023-11-28

    申请号:US17358065

    申请日:2021-06-25

    CPC classification number: H02M7/53875 H02M3/1582 H02M7/538466

    Abstract: A multi-switch types hybrid power electronics build block (MST HPEBB) least replaceable unit converter employs a first low voltage side (for example, 1000 volt power switches) and a second high voltage side (for example, 3000 volt power switches). The MST HPEBB LRU employs multiple bridge converters connected in series and/or in parallel, and coupled in part by a 1:1 transformer. To reduce weight and volume requirements compared to known PEBB LRUs, different power switch types are employed in different bridge converters. For example, in one exemplary embodiment, low voltage 1.7 kVolt SiC MOSFETS may be employed on the lower voltage side, while at least some 4.5 kVolt Silicon IGBTs may be employed on the high voltage side.

    VOLTAGE CONVERTER
    4.
    发明公开
    VOLTAGE CONVERTER 审中-公开

    公开(公告)号:US20240333175A1

    公开(公告)日:2024-10-03

    申请号:US18614887

    申请日:2024-03-25

    CPC classification number: H02M7/538463 H02M7/538466 H02M7/53835

    Abstract: A converter circuit is configured to convert a DC voltage into an AC voltage using a first thyristor and second thyristor in series in a first branch, a third thyristor and fourth thyristor in series in a second branch in an antiparallel configuration to the first branch, and a first transistor and second transistor in series in a third branch. When the AC voltage is equal to zero, and when the first thyristor is conductive and the first and second transistors are non-conductive, a first positive current is applied to the gate of the antiparallel third thyristor to control turn on and ensure that the current circulating in the first thyristor falls below the holding current.

    METHOD FOR DETECTING A CHARACTERISTIC OPERATING PARAMETER OF A TRANSISTOR OF AN INVERTER

    公开(公告)号:US20230231496A1

    公开(公告)日:2023-07-20

    申请号:US18155911

    申请日:2023-01-18

    CPC classification number: H02M7/538466 H02M1/0041 H02M7/4818

    Abstract: An inverter. The inverter includes a first and second transistors, which are a high-side transistor and a low-side transistor of the inverter, and control electronics configured to trigger a first switching operation, in which the first transistor is switched on, wherein the second transistor is in a switched-off state, wherein a parasitic capacitance of the first transistor is discharged during the first switching operation, to trigger a second switching operation, in which the first transistor is switched off or switched on again, wherein the second transistor simultaneously remains in the switched-off state, wherein the parasitic capacitance of the first transistor is already discharged in the second switching operation, to record a time difference which describes a difference between a duration of the first switching operation and a duration of the second switching operation, and to determine a characteristic operating parameter of the first transistor based on the time difference.

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