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公开(公告)号：US20130278356A1
公开(公告)日：2013-10-24
申请号：US13879028
申请日：2011-10-14
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
IPC分类号： H03H9/54
摘要： The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.
摘要翻译： 本发明涉及一种声耦合薄膜BAW滤波器，包括压电层，将电信号改变成声波（SAW，BAW）的压电层上的输入端口和压电层上的输出端口改变声学 信号变成电信号。 根据本发明，端口包括彼此靠近定位的电极，并且滤波器设计成以一阶厚度延伸TE1模式操作。
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公开(公告)号：US20150333730A1
公开(公告)日：2015-11-19
申请号：US14810481
申请日：2015-07-28
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
IPC分类号： H03H9/205
CPC分类号： H03H9/02228 , H03H9/0095 , H03H9/02007 , H03H9/02125 , H03H9/175 , H03H9/177 , H03H9/205 , H03H9/564 , H03H9/584 , H03H2003/0414 , Y10T29/42
摘要： In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE1 and the second harmonic thickness shear (TS2) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.
摘要翻译： 在基于压电薄膜上的横向声耦合谐振器的体声波（BAW）滤波器中，可以利用不同性质的两种不同的声板波模，例如厚度延伸（纵向）TE1和二次谐波厚度剪切（TS2 ）模式以形成带通响应。 本发明基于属于促进信号传输的不同平板波模式的至少两个横向驻波共振的激发。 该通带是通过调整装置中的波传播特性来设计的，使得谐振在合适的频率被激发以形成所需形状的通带。 因此，这里描述的滤波器的带宽可以是现有的最先进的微声滤波器的两倍以上。 因此，具有重要的商业和技术价值。
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公开(公告)号：US20120229226A1
公开(公告)日：2012-09-13
申请号：US13497805
申请日：2010-09-27
申请人： Aarne Oja , Tuomas Pensala , Johanna Meltaus
发明人： Aarne Oja , Tuomas Pensala , Johanna Meltaus
IPC分类号： H03B5/32
CPC分类号： H03H9/02259 , B81B3/0081 , B81B2201/0271 , H03H3/0076 , H03H9/02338 , H03H9/02448 , H03H9/2436 , H03H9/2452 , H03H9/2463 , H03H2003/027 , H03H2003/0407 , H03H2009/02496 , H03H2009/02503 , H03H2009/02511 , H03H2009/241 , H03H2009/2442
摘要： The invention relates to a micromechanical resonator comprising a substrate (1) of first material (2), a resonator (3) suspended to the supporting structure (1), the resonator (3) being at least partially of the same material (2) as the supporting structure and dimensioned for resonation at a specific frequency f0, coupling means (5) for initiating, maintaining and coupling the resonation of the resonator (3) to an external circuit (6), and the resonator (3) including second material (4), the thermal properties of which being different from the first material (2). In accordance with the invention the resonator (3) includes the second material (4) located concentrated in specific places of the resonator (3).
摘要翻译： 本发明涉及一种微机械谐振器，其包括第一材料（2）的衬底（1），悬挂于支撑结构（1）的谐振器（3），谐振器（3）至少部分由相同的材料（2）组成， 作为用于在特定频率f0处的谐振的支撑结构和尺寸，用于启动，维持和耦合谐振器（3）的谐振到外部电路（6）的耦合装置（5）和包括第二材料的谐振器 （4），其热性质与第一材料（2）不同。 根据本发明，谐振器（3）包括集中在谐振器（3）的特定位置的第二材料（4）。
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公开(公告)号：US09893712B2
公开(公告)日：2018-02-13
申请号：US13879028
申请日：2011-10-14
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
摘要： The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.
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公开(公告)号：US09294069B2
公开(公告)日：2016-03-22
申请号：US13642155
申请日：2011-04-21
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
CPC分类号： H03H9/02228 , H03H9/0095 , H03H9/02007 , H03H9/02125 , H03H9/175 , H03H9/177 , H03H9/205 , H03H9/564 , H03H9/584 , H03H2003/0414 , Y10T29/42
摘要： In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE1 and the second harmonic thickness shear (TS2) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.
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公开(公告)号：US08925163B2
公开(公告)日：2015-01-06
申请号：US13272390
申请日：2011-10-13
CPC分类号： H03H9/0095 , H03H3/02 , H03H9/02125 , H03H9/562 , Y10T29/42 , Y10T29/49002 , Y10T29/49155
摘要： The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.
摘要翻译： 本发明描述了一种基于横向声耦合的声平衡不平衡（balun）或平衡平衡薄膜BAW滤波器的制造方法。 在横向声耦合薄膜BAW滤波器（LBAW）中，如果平衡端口的电极放置在压电膜的相对侧上，则可以实现从不平衡到平衡电信号的转换。 制造过程比基于垂直声耦合的相应部件更简单。 该器件还可实现阻抗变换。
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公开(公告)号：US20130057360A1
公开(公告)日：2013-03-07
申请号：US13642155
申请日：2011-04-21
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
IPC分类号： H03H9/54
CPC分类号： H03H9/02228 , H03H9/0095 , H03H9/02007 , H03H9/02125 , H03H9/175 , H03H9/177 , H03H9/205 , H03H9/564 , H03H9/584 , H03H2003/0414 , Y10T29/42
摘要： In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE1 and the second harmonic thickness shear (TS2) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.
摘要翻译： 在基于压电薄膜上的横向声耦合谐振器的体声波（BAW）滤波器中，可以利用不同性质的两种不同的声板波模，例如厚度延伸（纵向）TE1和二次谐波厚度剪切（TS2 ）模式以形成带通响应。 本发明基于属于促进信号传输的不同平板波模式的至少两个横向驻波共振的激发。 该通带是通过调整装置中的波传播特性来设计的，使得谐振在合适的频率被激发以形成所需形状的通带。 因此，这里描述的滤波器的带宽可以是现有的最先进的微声滤波器的两倍以上。 因此，具有重要的商业和技术价值。
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公开(公告)号：US20120086523A1
公开(公告)日：2012-04-12
申请号：US13272390
申请日：2011-10-13
CPC分类号： H03H9/0095 , H03H3/02 , H03H9/02125 , H03H9/562 , Y10T29/42 , Y10T29/49002 , Y10T29/49155
摘要： The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.
摘要翻译： 本发明描述了一种基于横向声耦合的声平衡不平衡（balun）或平衡平衡薄膜BAW滤波器的制造方法。 在横向声耦合薄膜BAW滤波器（LBAW）中，如果平衡端口的电极放置在压电膜的相对侧上，则可以实现从不平衡到平衡电信号的转换。 制造过程比基于垂直声耦合的相应部件更简单。 该器件还可实现阻抗变换。
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公开(公告)号：US08786166B2
公开(公告)日：2014-07-22
申请号：US13209099
申请日：2011-08-12
申请人： Antti Jaakkola , Tuomas Pensala , Jyrki Kiihamäki
发明人： Antti Jaakkola , Tuomas Pensala , Jyrki Kiihamäki
IPC分类号： H01L41/09
CPC分类号： H03H3/0072 , H03H3/0076 , H03H9/02448 , H03H9/2463 , H03H9/505 , H03H2009/02385 , H03H2009/02503 , H03H2009/2442
摘要： The invention relates to a microelectromechanical resonators and a method of manufacturing thereof. The resonator comprises at least two resonator elements made from semiconductor material, the resonator elements being arranged laterally with respect to each other as an array, at least one transducer element coupled to said resonator elements and capable of exciting a resonance mode to the resonator elements. According to the invention, said at least one transducer element is a piezoelectric transducer element arranged laterally with respect to the at least two resonator elements between the at least two resonator elements and adapted to excite to the resonator elements as said resonance mode a resonance mode whose resonance frequency is dependent essentially only on the c44 elastic parameter of the elastic modulus of the material of the resonator elements. By means of the invention, electrostatic actuation and problems associated therewith can be avoided and accurate resonators can be manufactured.
摘要翻译： 本发明涉及一种微机电谐振器及其制造方法。 谐振器包括由半导体材料制成的至少两个谐振器元件，谐振器元件相对于彼此横向地布置为阵列，耦合到所述谐振器元件并能够激励谐振元件的谐振模式的至少一个换能器元件。 根据本发明，所述至少一个换能器元件是在所述至少两个谐振元件之间相对于所述至少两个谐振器元件横向布置的压电换能器元件，并且适于作为所述谐振模式激励谐振元件， 谐振频率基本上仅取决于谐振器元件的材料的弹性模量的c44弹性参数。 通过本发明，可以避免静电致动和与之相关的问题，并且可以制造精确的谐振器。
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公开(公告)号：US20120286903A1
公开(公告)日：2012-11-15
申请号：US13468052
申请日：2012-05-10
申请人： Mika Prunnila , Antti Jaakkola , Tuomas Pensala
发明人： Mika Prunnila , Antti Jaakkola , Tuomas Pensala
CPC分类号： B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0271 , B81C2201/0164 , B81C2201/0167 , B81C2201/0177 , G06F17/5045 , H03H9/02448 , H03H9/2447 , H03H2009/2442
摘要： The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.
摘要翻译： 本发明涉及一种微机械装置，其包括能够偏转或谐振并且包括具有不同材料特性的至少两个区域的半导体元件和功能性耦合到所述半导体元件的驱动或感测装置。 根据本发明，所述区域中的至少一个包括一种或多种n型掺杂剂，并且所述区域的相对体积，掺杂浓度，掺杂剂和/或晶体取向被构造成使得广义刚度的温度敏感度 在区域的至少一个温度下符号相反，半导体元件的整体刚度的总体温度漂移在100℃的温度范围内为50ppm以下。该器件可以是谐振器。 还公开了一种设计该设备的方法。
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