公开(公告)号：US11942572B2

公开(公告)日：2024-03-26

申请号：US16768594

申请日：2018-12-13

申请人： OSRAM OLED GMBH

发明人： Siegfried Herrmann ,  Michael Völkl

IPC分类号： H01L33/20 ,  F21K9/90 ,  H01L23/00 ,  H01L25/075 ,  H01L33/52 ,  H01L33/64 ,  H05K1/05 ,  H05K3/00 ,  H05K3/28 ,  H10K19/00 ,  H10K50/10 ,  F21Y115/10

CPC分类号： H01L33/20 ,  F21K9/90 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/52 ,  H01L33/64 ,  H01L33/644 ,  H05K1/05 ,  H05K3/0014 ,  H05K3/284 ,  H10K19/901 ,  H10K50/10 ,  F21Y2115/10 ,  H01L2924/181 ,  H05K2201/0129 ,  H05K2201/10106

摘要： The invention relates to a method for producing a semiconductor component comprising a radiation-emitting optical semiconductor chip or a plurality of radiation-emitting optical semiconductor chips, said method comprising: applying the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips to a deformable flat support deforming the support; and permanently fixing the deformation.

公开(公告)号：US20240349521A1

公开(公告)日：2024-10-17

申请号：US18627006

申请日：2024-04-04

申请人： The Board of Trustees of the Leland Stanford Junior University

发明人： Weichen Wang ,  Zhenan Bao

IPC分类号： H10K10/46 ,  G06N3/065 ,  H10K19/00

CPC分类号： H10K10/474 ,  G06N3/065 ,  H10K10/471 ,  H10K19/901

摘要： Certain examples include an elastic transistor having multiple layers, as a monolithic IC, to provide a stretchable high-k multi-layer dielectric that in response to a low-drive voltage, operates to provide (stable or steady-state) operation. The stretchable layers include: a high-k dielectric layer, and another dielectric layer, with the high-k dielectric layer being between the gate of the elastic transistor and the other dielectric layer. More-specific examples, useful in combination, have two types of the above-characterized elastic transistors cooperatively arranged and respectively implemented as a semiconductor with multiple different dielectric materials and as a synaptic transistor with the high-k dielectric layer including a border interface region characterized as one of a polycation interface and a polyanion interface and with the other dielectric layer corresponding to an interfacial portion along an outer border of the high-k dielectric layer.

公开(公告)号：US20240155851A1

公开(公告)日：2024-05-09

申请号：US17754991

申请日：2022-04-13

申请人： GUANGZHOU CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

发明人： Juncheng Xiao ,  Jianwei Fang ,  Bin Zhao

IPC分类号： H10K10/43 ,  H10K19/00 ,  H10K19/80 ,  H10K59/125

CPC分类号： H10K10/43 ,  H10K19/202 ,  H10K19/80 ,  H10K19/901 ,  H10K59/125

摘要： The present invention provides an array substrate, a method for manufacturing the array substrate, and a display panel. The array substrate includes a driving transistor, and the driving transistor includes: a gate electrode; an active layer arranged opposite to a position of the gate electrode, the active layer includes a first semiconductor and second semiconductors, the second semiconductors are in contact with the first semiconductor to form a first PN junction and a second PN junction respectively, and the first PN junction corresponds to the source electrode; and a source drain layer, including a source electrode and a drain electrode. The second semiconductors are electrically connected with the source electrode and drain electrode, respectively.