公开(公告)号：US20200295244A1

公开(公告)日：2020-09-17

申请号：US16765192

申请日：2018-11-27

申请人： OSRAM OLED GmbH

发明人： Siegfried Herrmann ,  Michael Völkl

IPC分类号： H01L33/58 ,  H01L33/62 ,  H01L33/50 ,  H01L33/56 ,  H01L25/075

摘要： An optoelectronic component, having an optoelectronic semiconductor chip, includes a substrate, wherein at least two light-emitting sections are arranged laterally next to one another over an upper side of the substrate, the light-emitting sections are separately controllable, the light-emitting sections generate electromagnetic radiation from different spectral ranges, the light-emitting sections are formed by a layer sequence, an active region is formed inside the layer sequence, trenches are formed between the light-emitting sections, and the trenches fully divide the active region so that the light-emitting sections are separated from one another.

公开(公告)号：US11715815B2

公开(公告)日：2023-08-01

申请号：US17053800

申请日：2019-05-08

申请人： Osram OLED GmbH

发明人： Michael Völkl ,  Siegfried Herrmann

IPC分类号： H01L33/14 ,  H01L33/10 ,  H01L33/50

CPC分类号： H01L33/14 ,  H01L33/10 ,  H01L33/502

摘要： An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

公开(公告)号：US10672962B2

公开(公告)日：2020-06-02

申请号：US16091080

申请日：2017-04-10

申请人： OSRAM OLED GMBH

发明人： Siegfried Herrmann ,  Michael Völkl

IPC分类号： H01L33/62 ,  H01L33/38 ,  H01L33/48 ,  H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60 ,  H01L25/075

摘要： A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a substrate having a top surface, a bottom surface opposite the top surface and a first side surface extending transversely or perpendicularly to the bottom surface, a semiconductor body arranged on the top surface of the substrate, the semiconductor body comprising an active region configured to generate light and a contacting comprising a first current distribution structure and a second current distribution structure, which is formed to supply current to the active region, wherein the semiconductor chip is free of any connection point on a side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, and wherein the connection point is a connection point for electrically contacting the first and second current distribution structures.

公开(公告)号：US11942572B2

公开(公告)日：2024-03-26

申请号：US16768594

申请日：2018-12-13

申请人： OSRAM OLED GMBH

发明人： Siegfried Herrmann ,  Michael Völkl

IPC分类号： H01L33/20 ,  F21K9/90 ,  H01L23/00 ,  H01L25/075 ,  H01L33/52 ,  H01L33/64 ,  H05K1/05 ,  H05K3/00 ,  H05K3/28 ,  H10K19/00 ,  H10K50/10 ,  F21Y115/10

CPC分类号： H01L33/20 ,  F21K9/90 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/52 ,  H01L33/64 ,  H01L33/644 ,  H05K1/05 ,  H05K3/0014 ,  H05K3/284 ,  H10K19/901 ,  H10K50/10 ,  F21Y2115/10 ,  H01L2924/181 ,  H05K2201/0129 ,  H05K2201/10106

摘要： The invention relates to a method for producing a semiconductor component comprising a radiation-emitting optical semiconductor chip or a plurality of radiation-emitting optical semiconductor chips, said method comprising: applying the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips to a deformable flat support deforming the support; and permanently fixing the deformation.

公开(公告)号：US11211533B2

公开(公告)日：2021-12-28

申请号：US16765192

申请日：2018-11-27

申请人： OSRAM OLED GmbH

发明人： Siegfried Herrmann ,  Michael Völkl

IPC分类号： H01L33/58 ,  H01L25/075 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62

摘要： An optoelectronic component, having an optoelectronic semiconductor chip, includes a substrate, wherein at least two light-emitting sections are arranged laterally next to one another over an upper side of the substrate, the light-emitting sections are separately controllable, the light-emitting sections generate electromagnetic radiation from different spectral ranges, the light-emitting sections are formed by a layer sequence, an active region is formed inside the layer sequence, trenches are formed between the light-emitting sections, and the trenches fully divide the active region so that the light-emitting sections are separated from one another.