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    Polishing composition and polishing method employing it
    5.
    发明授权
    Polishing composition and polishing method employing it 有权
    抛光组合物和抛光方法

    公开(公告)号：US06773476B2

    公开(公告)日：2004-08-10

    申请号：US10200173

    申请日：2002-07-23

    申请人： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

    发明人： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

    IPC分类号： C09G102

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/06

    摘要： A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C≡C triple bond, represented by the formula (1): wherein each of R1 to R6 is H or a C1-10 alkyl group, each of X and Y is an ethyleneoxy group or a propyleneoxy group, and each of m and n is a positive number of from 1 to 20, (c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (e) hydrogen peroxide, and (f) water.

    摘要翻译： 一种抛光组合物，其包含：（a）至少一种选自二氧化硅和氧化铝的研磨剂，（b）至少一种选自聚环氧乙烷，聚环氧丙烷，聚氧乙烯烷基醚 ，聚氧亚丙基烷基醚，聚氧乙烯聚氧丙烯烷基醚和具有C = C三键的聚氧化烯加成聚合物，由式（1）表示：其中R 1至R 6各自为H或C 1-10烷基，X Y是乙烯氧基或丙烯氧基，m和n分别为1〜20的正数，（c）至少一种选自柠檬酸，草酸，酒石酸 ，甘氨酸，α-丙氨酸和组氨酸，（d）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑和甲苯基三唑的防腐剂，（e）过氧化氢和（f）水。

    Polishing composition and polishing process
    6.
    发明授权
    Polishing composition and polishing process 失效
    抛光组合和抛光工艺

    公开(公告)号：US06315803B1

    公开(公告)日：2001-11-13

    申请号：US09452384

    申请日：1999-12-01

    申请人： Katsuyoshi Ina ,  Tadahiro Kitamura

    发明人： Katsuyoshi Ina ,  Tadahiro Kitamura

    IPC分类号： C23F118

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

    摘要： Object: To provide a polishing composition which is capable of polishing a tantalum-containing compound at a high stock removal rate and whereby the copper surface after polishing is scarcely corroded, and to provide a polishing process where dishing can be minimized. Means to accomplish the object: A polishing composition comprising an abrasive, oxalic acid, an ethylenediamine derivative, a benzotriazole derivative and water and not containing an oxidizing agent, and a polishing composition comprising an abrasive, oxalic acid, an ethylenediamine derivative, a benzotriazole derivative, water and hydrogen peroxide. Further, a polishing process for forming a copper printed wiring, which is a polishing process for a semiconductor device and which comprises a first polishing step wherein polishing is completed immediately before reaching a barrier layer while a copper layer still slightly remains, and second and third polishing steps wherein the remaining copper layer and the barrier layer are polished, wherein in the second polishing step, a polishing composition containing hydrogen peroxide is used and all the copper layer to be removed, is removed by polishing, and then, in the third polishing step, a polishing composition not containing hydrogen peroxide is used and all the barrier layer to be removed, is removed by polishing.

    摘要翻译： 对象物：提供一种抛光组合物，该抛光组合物能够以较高的原料去除速率抛光含钽化合物，并且由此抛光后的铜表面几乎不被腐蚀，并提供可以最小化凹陷的抛光工艺。 实现该目的的手段：包含磨料，草酸，乙二胺衍生物，苯并三唑衍生物和水，不含氧化剂的抛光组合物，以及包含研磨剂，草酸，乙二胺衍生物，苯并三唑衍生物 ，水和过氧化氢。此外，作为用于半导体器件的抛光工艺的铜印刷布线的抛光工艺，其包括第一抛光步骤，其中抛光在到达阻挡层之前完成，同时铜层仍然稍微 剩下的第二和第三抛光步骤，其中抛光剩余的铜层和阻挡层，其中在第二抛光步骤中，使用含有过氧化氢的抛光组合物，并且通过抛光去除所有要除去的铜层，以及 那么在第三抛光步骤中，不含有氢的抛光组合物 使用xide并且要去除的所有阻挡层通过抛光去除。

    Polishing composition and polishing method employing it
    7.
    发明授权
    Polishing composition and polishing method employing it 有权
    抛光组合物和抛光方法

    公开(公告)号：US06626967B2

    公开(公告)日：2003-09-30

    申请号：US10283087

    申请日：2002-10-30

    申请人： Shinichiro Takami ,  Katsuyoshi Ina

    发明人： Shinichiro Takami ,  Katsuyoshi Ina

    IPC分类号： C09G102

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

    摘要： A polishing composition comprising the following components (a) to (c): (a) colloidal silica; (b) at least one bicarbonate selected from the group consisting of ammonium bicarbonate, lithium bicarbonate, potassium bicarbonate, sodium bicarbonate and a mixture thereof; and (c) water; wherein the concentration of each of the elements included in Groups 2A, 3A, 4A, 5A, 6A, 7A, 8A, 1B and 2B, lanthanoid and actinoid, and the concentration of each element of aluminum, gallium, indium, thallium, tin, lead, bismuth, fluorine and chlorine, are at most 100 ppb in the polishing composition, respectively.

    摘要翻译： 一种抛光组合物，其包含以下组分（a）至（c）：（a）胶态二氧化硅;（b）至少一种选自碳酸氢铵，碳酸氢锂，碳酸氢钾，碳酸氢钠及其混合物的碳酸氢盐; 和（c）水;其中包括在2A，3A，4A，5A，6A，7A，8A，1B和2B族中的每种元素的浓度，镧系元素和锕系元素，以及铝，镓， 铟，铊，锡，铅，铋，氟和氯分别在抛光组合物中为100ppb以下。

    Polishing composition and polishing method employing it
    8.
    发明授权
    Polishing composition and polishing method employing it 失效
    抛光组合物和抛光方法

    公开(公告)号：US06679929B2

    公开(公告)日：2004-01-20

    申请号：US10046394

    申请日：2002-01-16

    申请人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

    发明人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

    IPC分类号： C09G102

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： A polishing composition comprising the following components (a) to (g): (a) at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) an aliphatic carboxylic acid, (c) at least one basic compound selected from the group consisting of an ammonium salt, an alkali metal salt, an alkaline earth metal salt, an organic amine compound and a quaternary ammonium salt, (d) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (e) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (f) hydrogen peroxide, and (g) water.

    摘要翻译： 一种抛光组合物，其包含以下组分（a）至（g）：（a）至少一种选自二氧化硅，氧化铝，氧化铈，氧化锆和氧化钛的研磨剂，（b）脂族羧酸 ，（c）至少一种选自铵盐，碱金属盐，碱土金属盐，有机胺化合物和季铵盐的碱性化合物，（d）至少一种选择的研磨加速化合物 来自由柠檬酸，草酸，酒石酸，甘氨酸，α-丙氨酸和组氨酸组成的组，（e）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑和甲苯基三唑的防腐剂，（f）过氧化氢 ，（g）水。

    Polishing composition and polishing method employing it
    9.
    发明授权
    Polishing composition and polishing method employing it 失效
    抛光组合物和抛光方法

    公开(公告)号：US06565619B1

    公开(公告)日：2003-05-20

    申请号：US10263846

    申请日：2002-10-04

    申请人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

    发明人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

    IPC分类号： C09K314

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

    摘要： A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole, tolyltriazole and their derivatives, and (e) water.

    摘要翻译： 1.一种抛光组合物，其特征在于，具有：（a）具有带正电荷的表面的胶体二氧化硅，（b）具有带负电荷的表面的胶体二氧化硅，（c）至少一种选自硝酸，盐酸，硫酸，乳酸 酸，乙酸，草酸，柠檬酸，苹果酸，琥珀酸，丁酸和丙二酸，（d）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑，甲苯基三唑及其衍生物的防腐剂，以及 （e）水。

    Photoresist film and method for forming pattern thereof
    10.
    发明授权
    Photoresist film and method for forming pattern thereof 失效
    光刻胶膜及其形成图案的方法

    公开(公告)号：US6100010A

    公开(公告)日：2000-08-08

    申请号：US255757

    申请日：1999-02-23

    申请人： Katsuyoshi Ina

    发明人： Katsuyoshi Ina

    IPC分类号： G03F7/26 ,  G03F7/095 ,  G03F7/11 ,  H01L21/027

    CPC分类号： G03F7/095

    摘要： A photoresist includes a three-layer structure of a lower layer, a middle layer and an upper layer, wherein the lower and upper layers are photoresist layers, the lower layer is sensitive to a light having a longer wavelength than a light to which the upper layer is sensitive, and the middle layer is a light-shielding film formed of an organic substance that has a transmittance such that the lower layer is not exposed to lights to which the lower and upper layers are sensitive.

    摘要翻译： 光致抗蚀剂包括下层，中间层和上层的三层结构，其中下层和上层是光致抗蚀剂层，下层对波长比波长长的光敏感，所述光比上层 层是敏感的，中间层是由有机物质形成的遮光膜，该有机物质具有使下层不暴露于下层和上层敏感的光的透射率。