INTERFACE DETECTION IN RECIPROCAL SPACE

    公开(公告)号:US20250037286A1

    公开(公告)日:2025-01-30

    申请号:US18226050

    申请日:2023-07-25

    Applicant: FEI Company

    Abstract: Methods and apparatus determine a location of a boundary of a given material in a sample, based on classification of reciprocal space images at respective positions. A diffraction image at a given position is classified to identify a material at that position. Imaging and classification at multiple positions can quickly and reliably find the boundary with sub-micron accuracy. Binary search provides speed-up. Classification is performed by neural network. The technique is suitable for distinguishing monocrystalline, polycrystalline, and amorphous silicon, high-Z materials (tungsten), or low-Z materials (carbon), among others. The technique integrates into automated workflows, with precise positioning of further imaging, probing, or milling operations based on the located boundary. Examples and variations are disclosed.

    Systems and methods for performing serial electron diffraction nanocrystallography

    公开(公告)号:US12072304B2

    公开(公告)日:2024-08-27

    申请号:US17428737

    申请日:2020-02-06

    CPC classification number: G01N23/20058 G01N2223/401

    Abstract: Systems and methods are provided for serial, high-throughput acquisition of electron diffraction patterns from nanocrystals. Nanocrystals dispersed on a TEM grid are automatically identified from an overview image that is obtained, for example, using a dark field detector in scanning mode. Diffraction patterns are subsequently obtained from a plurality of crystals identified in the overview image by sequentially moving (e.g. scanning) the electron nanobeam relative to the crystals and collecting diffraction images using a fast electron camera. In some example embodiments, this sequence may be repeated for different tilt angles, where registration among overview images obtained at the different tilt angles is employed to position the electron nanobeam for the different tilt angles (e.g. before the sample stage is moved to interrogate a different sample region). The present methods may be automated, thereby facilitating unsupervised acquisition of arbitrarily large data sets.

    Methods and systems for acquiring electron backscatter diffraction patterns

    公开(公告)号:US11114275B2

    公开(公告)日:2021-09-07

    申请号:US16460749

    申请日:2019-07-02

    Applicant: FEI Company

    Abstract: Various methods and systems are provided for acquiring electron backscatter diffraction patterns. In one example, a first scan is performed by directing a charged particle beam towards multiple impact points within a ROI and detecting particles scattered from the multiple impact points. A signal quality of each impact point of the multiple impact points is calculated based on the detected particles. A signal quality of the ROI is calculated based on the signal quality of each impact point. Responsive to the signal quality of the ROI lower than a threshold signal quality, a second scan of the ROI is performed. A structural image of the sample may be formed based on detected particles from both the first scan and the second scan.

    Method of performing electron diffraction pattern analysis upon a sample

    公开(公告)号:US10663414B2

    公开(公告)日:2020-05-26

    申请号:US15118042

    申请日:2014-03-10

    Abstract: A method is provided for performing electron diffraction pattern analysis upon a sample in a vacuum chamber of a microscope. Firstly a sample is isolated from part of a specimen using a focused particle beam. A manipulator end effector is then attached to the sample so as to effect a predetermined orientation between the end effector and the sample. With the sample detached, the manipulator end effector is rotated about a rotation axis to bring the sample into a predetermined geometry with respect to an electron beam and diffraction pattern imaging apparatus so as to enable an electron diffraction pattern to be obtained from the sample while the sample is still fixed to the manipulator end effector. An electron beam is caused to impinge upon the sample attached to the manipulator end effector so as to obtain an electron diffraction pattern.

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