METHODS AND APPARATUS FOR USE WITH EXTREME ULTRAVIOLET LIGHT HAVING CONTAMINATION PROTECTION
    1.
    发明申请
    METHODS AND APPARATUS FOR USE WITH EXTREME ULTRAVIOLET LIGHT HAVING CONTAMINATION PROTECTION 有权
    使用极光紫外线灯具有污染防护的方法和装置

    公开(公告)号:US20140231659A1

    公开(公告)日:2014-08-21

    申请号:US14176587

    申请日:2014-02-10

    CPC classification number: G01N21/59 G03F7/70933 G03F7/70983

    Abstract: An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatus may have A) a low pressure gas with a heat control unit thermally coupled. to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.

    Abstract translation: 一种用于极紫外(EUV)光的装置,包括:A)具有第一端开口,第二端开口和中间开口的管道,所述第一端开口位于第二端开口的中间,B)设置成接收EUV光的光学部件 从第二端开口或通过第二端开口发射光,以及C)处于第一压力的低压气体源流过管道,该气体具有高透光率的EUV光,其流体耦合到中间开口 。 除了或不是气流,装置可具有A)具有热耦合的热控制单元的低压气体。 到所述管道和所述光学部件中的至少一个和/或B)在所述二重体的第一部分和第二部分之间产生电压的电压装置,其间具有接地绝缘部分。

    APPARATUS, SYSTEM, AND METHOD FOR SEPARATING GASES AND MITIGATING DEBRIS IN A CONTROLLED PRESSURE ENVIRONMENT
    2.
    发明申请
    APPARATUS, SYSTEM, AND METHOD FOR SEPARATING GASES AND MITIGATING DEBRIS IN A CONTROLLED PRESSURE ENVIRONMENT 审中-公开
    用于分离气体并减轻控制压力环境中的破坏的装置,系统和方法

    公开(公告)号:US20140166051A1

    公开(公告)日:2014-06-19

    申请号:US14105986

    申请日:2013-12-13

    CPC classification number: G03F7/70916 G03F7/70033 H01J37/32449 H05G2/001

    Abstract: An assembly, including: a nozzle including a first chamber with a first orifice arranged to receive a stream of gas; a second chamber with a second orifice to emit the stream; a throat connecting the nozzle chambers; and a collector including: top and bottom walls with first and second openings; a third chamber bounded by the top and bottom walls and including a third opening connected to the second orifice to receive the stream; and a fourth opening. The first chamber tapers from the first orifice to the throat. The second chamber expands in size from the throat to the second orifice. The third chamber expands in size from the third opening to the fourth opening. The collector is arranged to: entrain, in the stream, debris entering the third chamber through first or second opening; and emit the stream, with the entrained debris, from the fourth opening.

    Abstract translation: 一种组件,包括:喷嘴,其包括具有布置成接收气流的第一孔的第一室; 具有第二孔的第二室,用于排出所述流; 连接喷嘴室的喉部; 和收集器,包括:具有第一和第二开口的顶壁和底壁; 第三室,其由顶壁和底壁限定,并且包括连接到第二孔以接收流的第三开口; 和第四个开口。 第一个室从第一个孔到喉咙逐渐变细。 第二腔室的尺寸从喉部扩大到第二孔口。 第三室从第三个开口扩大到第四个开口。 收集器布置成:在流中夹带通过第一或第二开口进入第三室的碎屑; 并从第四个开口排出带有夹带的碎屑的流。

    Electron beam emitters with ruthenium coating

    公开(公告)号:US10141155B2

    公开(公告)日:2018-11-27

    申请号:US15588006

    申请日:2017-05-05

    Abstract: An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.

    Methods and apparatus for use with extreme ultraviolet light having contamination protection
    6.
    发明授权
    Methods and apparatus for use with extreme ultraviolet light having contamination protection 有权
    用于具有污染防护的极紫外光的方法和设备

    公开(公告)号:US09389180B2

    公开(公告)日:2016-07-12

    申请号:US14176587

    申请日:2014-02-10

    CPC classification number: G01N21/59 G03F7/70933 G03F7/70983

    Abstract: An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatus may have A) a low pressure gas with a heat control unit thermally coupled to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.

    Abstract translation: 一种用于极紫外(EUV)光的装置,包括:A)具有第一端开口,第二端开口和中间开口的管道,所述第一端开口位于第二端开口的中间,B)设置成接收EUV光的光学部件 从第二端开口或通过第二端开口发射光,以及C)处于第一压力的低压气体源流过管道,该气体具有高透光率的EUV光,其流体耦合到中间开口 。 除了或不是气体流动之外,装置可以具有A)具有热耦合到管道和光学部件中的至少一个的热控制单元的低压气体和/或B)用于在第一 二重奏部分和第二部分之间具有接地绝缘部分。

    Electron Beam Emitters with Ruthenium Coating

    公开(公告)号:US20180174794A1

    公开(公告)日:2018-06-21

    申请号:US15588006

    申请日:2017-05-05

    CPC classification number: H01J37/06 H01J37/28 H01J2237/061

    Abstract: An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.

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