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4 条记录 (耗时 0.008 秒)

    Process for forming a colored image having a dominant attribute
    1.
    发明授权
    Process for forming a colored image having a dominant attribute 失效
    用于形成具有主导属性的彩色图像的处理

    公开(公告)号：US06514661B1

    公开(公告)日：2003-02-04

    申请号：US09687596

    申请日：2000-10-13

    申请人： Brian S. Eyre ,  Michael M. Merabi

    发明人： Brian S. Eyre ,  Michael M. Merabi

    IPC分类号： G03C558

    CPC分类号： G03F3/10

    摘要： A process for making an element for forming a final image with an overall attribute by exposure to actinic radiation, the process comprising: providing a support element having a surface; applying a first layer having a first surface and a second surface to the surface of the support element, the first surface of the first layer being adjacent to the surface of the support element and the second surface of the first layer being opposite the first surface; applying, prior to image-wise exposure to actinic radiation, a second layer adjacent to the second surface of the first layer, the second layer having an inner surface and an outer surface, the first layer comprising a photosensitive composition and a feature which imparts a dominant attribute to the first layer, the feature being selected from the group consisting of a fluorescent feature, a metallic feature, an opacity enriching feature or a combination of at least two of the foregoing features, the second layer comprising a first colorant; wherein the overall attribute of the final image is defined by the dominant attribute of the first layer. The invention also relates to an element for forming a final image having a dominant attribute.

    摘要翻译： 一种用于通过暴露于光化辐射来形成具有整体属性的最终图像的元件的方法，所述方法包括：提供具有表面的支撑元件;将具有第一表面和第二表面的第一层施加到所述表面上 所述第一层的所述第一表面邻近所述支撑元件的表面，并且所述第一层的第二表面与所述第一表面相对;在图像方式暴露于光化辐射之前，施加与所述支撑元件相邻的第二层 所述第一层的第二表面，所述第二层具有内表面和外表面，所述第一层包含光敏组合物和赋予所述第一层优势属性的特征，所述特征选自由 荧光特征，金属特征，不透明度丰富特征或至少两个前述特征的组合，所述第二层包括第一colo ran 其中最终图像的整体属性由第一层的主要属性定义。 本发明还涉及用于形成具有主要属性的最终图像的元件。

    Multiple wavelength photolithography for preparing multilayer microstructures
    2.
    发明授权
    Multiple wavelength photolithography for preparing multilayer microstructures 有权

    公开(公告)号：US06582890B2

    公开(公告)日：2003-06-24

    申请号：US09799744

    申请日：2001-03-05

    申请人： Paul Michael Dentinger ,  Karen Lee Krafcik

    发明人： Paul Michael Dentinger ,  Karen Lee Krafcik

    IPC分类号： G03C558

    CPC分类号： B81C1/00619 ,  C25D1/003 ,  C25D5/022 ,  G03F7/00 ,  G03F7/095 ,  Y10T428/24331

    摘要： The invention relates to a multilayer microstructure and a method for preparing thereof. The method involves first applying a first photodefinable composition having a first exposure wavelength on a substrate to form a first polymeric layer. A portion of the first photodefinable composition is then exposed to electromagnetic radiation of the first exposure wavelength to form a first pattern in the first polymeric layer. After exposing the first polymeric layer, a second photodefinable composition having a second exposure wavelength is applied on the first polymeric layer to form a second polymeric layer. A portion of the second photodefinable composition is then exposed to electromagnetic radiation of the second exposure wavelength to form a second pattern in the second polymeric layer. In addition, a portion of each layer is removed according to the patterns to form a multilayer microstructure having a cavity having a shape that corresponds to the portions removed.

    Method of pattern etching a low K dielectric layer
    4.
    发明授权
    Method of pattern etching a low K dielectric layer 失效
    图案蚀刻低K电介质层的方法

    公开(公告)号：US06331380B1

    公开(公告)日：2001-12-18

    申请号：US09549262

    申请日：2000-04-14

    申请人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

    发明人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

    IPC分类号： G03C558

    CPC分类号： H01L21/31138 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139

    摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

    摘要翻译： 本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。 使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。 无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。 高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。 这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。 本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。 该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。 蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。