公开(公告)号：US06331380B1

公开(公告)日：2001-12-18

申请号：US09549262

申请日：2000-04-14

申请人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

发明人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

IPC分类号： G03C558

CPC分类号： H01L21/31138 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139

摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

摘要翻译： 本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。 使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。 无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。 高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。 这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。 本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。 该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。 蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

公开(公告)号：US6080529A

公开(公告)日：2000-06-27

申请号：US174763

申请日：1998-10-19

申请人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

发明人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3213 ,  G03C5/58

CPC分类号： H01L21/0274 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/31116 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136

摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

摘要翻译： 本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。 使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。 无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。 高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。 这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。 本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。 该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。 蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

公开(公告)号：US06458516B1

公开(公告)日：2002-10-01

申请号：US09551255

申请日：2000-04-18

申请人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Hsieh ,  Diana Ma ,  Chun Yan ,  Jie Yuan

发明人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Hsieh ,  Diana Ma ,  Chun Yan ,  Jie Yuan

IPC分类号： G03C556

CPC分类号： H01L21/31138 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139

摘要： A method of patterning a layer of dielectric material having a thickness greater than 1,000 Å, and typically a thickness greater than 5,000 Å. The method is particularly useful for forming a high aspect ratio via or a high aspect ratio contact including self-aligned contact structures, where the aspect ratio is typically greater than 3 and the feature size of the contact is about 0.25 &mgr;m or less. In particular, an organic, polymeric-based masking material is used in a plasma etch process for transferring a desired pattern through an underlying layer of dielectric material. The combination of masking material and plasma source gas must provide the necessary high selectivity toward etching of the underlying layer of dielectric material. The selectivity is preferably greater than 3:1, where the etch rate of the dielectric material is at least 3 times greater than the etch rate of the organic, polymeric-based masking material. The dielectric material may be inorganic, for example, silicon oxide; doped silicon oxide; carbon-containing silicon oxide; SOG; BPSG; and similar materials. The dielectric material may be also be organic, where a high temperature organic-based masking material is used for transferring a desired pattern, and the underlying dielectric material is of a chemical and structural composition which is sufficiently different from the masking material that the required selectivity is provided. In any case, the organic, polymeric-based masking material is easily removed from the substrate etch process after completion of etch without damage to underlying device structures.

摘要翻译： 图案化厚度大于1000，通常大于5,000的厚度的电介质材料层的方法。 该方法对于形成包括自对准接触结构的高纵横比通孔或高纵横比接触特别有用，其中纵横比通常大于3，接触的特征尺寸为约0.25μm或更小。 特别地，在等离子体蚀刻工艺中使用有机的基于聚合物的掩模材料，用于将期望的图案转移通过介电材料的下层。 掩模材料和等离子体源气体的组合必须为蚀刻介电材料的下层提供必要的高选择性。 选择性优选大于3:1，其中介电材料的蚀刻速率比有机聚合物基掩模材料的蚀刻速率高至少3倍。 介电材料可以是无机的，例如氧化硅; 掺杂氧化硅; 含碳氧化硅; SOG; BPSG; 和类似的材料。 介电材料也可以是有机的，其中使用高温有机基掩蔽材料来转移所需的图案，并且下面的介电材料具有与掩蔽材料充分不同的化学和结构组成，所需的选择性 被提供。 在任何情况下，有机的基于聚合物的掩蔽材料在蚀刻完成之后容易地从基底蚀刻工艺中去除而不损坏下面的器件结构

公开(公告)号：US06620289B1

公开(公告)日：2003-09-16

申请号：US09300563

申请日：1999-04-27

申请人： Chun Yan ,  Yan Ye ,  Diana Xiaobing Ma

发明人： Chun Yan ,  Yan Ye ,  Diana Xiaobing Ma

IPC分类号： H01L21306

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45502 ,  H01J37/321 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069

摘要： A method and apparatus for processing a workpiece in a chamber by providing an asymmetric flow of process gas and processing the workpiece with the process gas. The asymmetric flow counteracts a non-uniform distribution of reactive species in the chamber. The asymmetric flow can be accomplished by introducing the process gas through a plurality of gas nozzles that communicate through a side wall of the chamber proximate a pump port while pumping gas with a pump coupled to the pump port. The inventive method can be used with a conventional processing chamber by only opening the gas nozzles closest to the pump and blocking any other gas nozzles. Alternatively, the method can be implemented in a processing chamber having gas nozzles located only proximate the pump port.

摘要翻译： 一种用于通过提供工艺气体的非对称流动并用工艺气体处理工件来处理腔室中的工件的方法和装置。 不对称流动抵消了室中反应物质的不均匀分布。 不对称流动可以通过将工艺气体引入多个气体喷嘴来实现，所述多个气体喷嘴通过邻近泵口的腔室的侧壁连通，同时用连接到泵口的泵泵送气体。 本发明的方法可以通过仅打开最靠近泵的气体喷嘴并阻挡任何其它气体喷嘴而与常规处理室一起使用。 或者，该方法可以在具有仅位于泵端口附近的气体喷嘴的处理室中实现。

公开(公告)号：US06547977B1

公开(公告)日：2003-04-15

申请号：US09610915

申请日：2000-07-05

申请人： Chun Yan ,  Gary C. Hsueh ,  Yan Ye ,  Diana Xiaobing Ma

发明人： Chun Yan ,  Gary C. Hsueh ,  Yan Ye ,  Diana Xiaobing Ma

IPC分类号： C03C1500

CPC分类号： H01L21/31138

摘要： The present disclosure pertains to a method for plasma etching of low k materials, particularly polymeric-based low k materials. Preferably the polymeric-based materials are organic-based materials. The method employs an etchant plasma where the major etchant species are generated from a halogen other than fluorine and oxygen. The preferred halogen is chlorine. The volumetric (flow rate) ratio of the halogen:oxygen in the plasma source gas ranges from about 1:20 to about 20:1. The atomic ratio of the halogen:oxygen preferably falls within the range from about 1:20 to about 20:1. When the halogen is chlorine, the preferred atomic ratio of chlorine:oxygen ranges from about 1:10 to about 5:1. When this atomic ratio of chlorine:oxygen is used, the etch selectivity for the low k material over adjacent oxygen-comprising or nitrogen-comprising layers is advantageous, typically in excess of about 10:1. The plasma source gas may contain additives in an amount of 15% or less by volume which are designed to improve selectivity for the low k dielectric over an adjacent material, to provide a better etch profile, or to provide better critical dimension control, for example. When the additive contains fluorine, the amount of the additive is such that residual chlorine on the etched surface of the low k material comprises less than 5 atomic %.

摘要翻译： 本公开涉及用于等离子体蚀刻低k材料，特别是基于聚合物的低k材料的方法。 优选地，基于聚合物的材料是有机基材料。 该方法采用蚀刻剂等离子体，其中主要蚀刻剂物质由除氟和氧之外的卤素产生。 优选的卤素是氯。 等离子体源气体中的卤素：氧的体积（流速）比为约1:20至约20:1。 卤素：氧的原子比优选在约1:20至约20:1的范围内。 当卤素为氯时，氯：氧的优选原子比范围为约1:10至约5:1。 当使用氯原子的氧原子比时，低k材料在相邻的含氧或含氮层上的蚀刻选择性是有利的，通常超过约10:1。 等离子体源气体可以含有体积的15％或更少的添加剂，其被设计成提高相邻材料上的低k电介质的选择性，以提供更好的蚀刻轮廓，或提供更好的临界尺寸控制，例如 。 当添加剂含氟时，添加剂的量使得低k材料的蚀刻表面上的残留氯含量小于5原子％。

公开(公告)号：US06537918B2

公开(公告)日：2003-03-25

申请号：US09920251

申请日：2001-07-31

申请人： Pavel Ionov ,  Sung Ho Kim ,  Dean Li ,  Chun Yan ,  James Chang Wang

发明人： Pavel Ionov ,  Sung Ho Kim ,  Dean Li ,  Chun Yan ,  James Chang Wang

IPC分类号： H01L21302

CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/3143

摘要： A method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.

摘要翻译： 一种用于等离子体蚀刻半导体膜堆叠的方法。 薄膜叠层包括至少一层包含氮氧化硅的层。 该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。 蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。 蚀刻剂气体形成含氟聚合物或物质，它们以足以降低邻近材料（例如光致抗蚀剂）蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上，同时允许蚀刻硅 含氧氮化物的层。

公开(公告)号：US06291356B1

公开(公告)日：2001-09-18

申请号：US09317655

申请日：1999-05-24

申请人： Pavel Ionov ,  Sung Ho Kim ,  Dean Li ,  Chun Yan ,  James Chang Wang

发明人： Pavel Ionov ,  Sung Ho Kim ,  Dean Li ,  Chun Yan ,  James Chang Wang

IPC分类号： H01L21302

CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/3143

摘要： The present disclosure pertains to a method for plasma etching a semiconductor film stack. The film stack includes at least one layer comprising silicon oxynitride. The method includes etching the silicon oxynitride-comprising layer using an etchant gas mixture comprising chlorine and at least one compound containing fluorine and carbon. The atomic ratio of fluorine to chlorine in the etchant gas ranges between about 3:1 and about 0.01:1; preferably, between about 0.5:1 and about 0.01:1; most preferably, between about 0.25:1 and about 0.1:1. The etchant gas forms a fluorine-comprising polymer or species which deposits on exposed surfaces adjacent to the silicon oxynitride-comprising layer in an amount sufficient to reduce the etch rate of an adjacent material (such as a photoresist) while permitting the etching of the silicon oxynitride-comprising layer.

摘要翻译： 本公开涉及用于等离子体蚀刻半导体膜堆叠的方法。 薄膜叠层包括至少一层包含氮氧化硅的层。 该方法包括使用包含氯和至少一种含氟和碳的化合物的蚀刻剂气体混合物来蚀刻含氧氮化硅层。 蚀刻剂气体中氟与氯的原子比范围为约3:1至约0.01:1; 优选约0.5:1至约0.01:1; 最优选在约0.25:1至约0.1:1之间。 蚀刻剂气体形成含氟聚合物或物质，它们以足以降低邻近材料（例如光致抗蚀剂）蚀刻速率的量沉积在与含氮氧化硅层相邻的暴露表面上，同时允许蚀刻硅 含氧氮化物的层。

公开(公告)号：US06352049B1

公开(公告)日：2002-03-05

申请号：US09119417

申请日：1998-07-20

申请人： Gerald Yin ,  Arnold Kolandenko ,  Hong Ching Shan ,  Peter Loewenhardt ,  Chii Lee ,  Yan Ye ,  Xueyan Qian ,  Songlin Xu ,  Arthur Chen ,  Arthur Sato ,  Michael Grimbergen ,  Diana Ma ,  John Yamartino ,  Chun Yan ,  Wade Zawalski

发明人： Gerald Yin ,  Arnold Kolandenko ,  Hong Ching Shan ,  Peter Loewenhardt ,  Chii Lee ,  Yan Ye ,  Xueyan Qian ,  Songlin Xu ,  Arthur Chen ,  Arthur Sato ,  Michael Grimbergen ,  Diana Ma ,  John Yamartino ,  Chun Yan ,  Wade Zawalski

IPC分类号： C23E1648

CPC分类号： H01J37/32871

摘要： The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

摘要翻译： 本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。 本发明具有处理室和至少一个辅助室。 辅助室能够产生旁路血浆并将其输送到处理室。 为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。 附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。

公开(公告)号：US06296780B1

公开(公告)日：2001-10-02

申请号：US08986427

申请日：1997-12-08

申请人： Chun Yan ,  Yan Ye ,  Diana Ma

发明人： Chun Yan ,  Yan Ye ,  Diana Ma

IPC分类号： H01L213213

CPC分类号： H01L21/31116

摘要： The present invention is embodied in a method and apparatus for etching an organic anti-reflective coating (OARC) layer and a titanium nitride anti-reflective coating (TiN ARC) layer deposited on a substrate located within a processing chamber, without the need for removing the substrate being processed from the processing chamber in which it is situated and without the need for intervening processing steps, such as chamber cleaning operations. The substrate has a base, an underlying oxide layer above the base, an overlying layer above the underlying layer, a middle conductive layer, a TiN ARC layer, and a top OARC layer spun on top of the TiN ARC.

摘要翻译： 本发明体现在一种用于蚀刻有机抗反射涂层（OARC）层和沉积在位于处理室内的衬底上的氮化钛抗反射涂层（TiN ARC）层的方法和装置中，而不需要去除 基板从其所处理的处理室进行处理，而不需要中间处理步骤，例如室清洁操作。 衬底具有基底，在基底上方的下面的氧化物层，在下层上方的上覆层，中间导电层，TiN ARC层和在TiN ARC顶部旋转的顶部OARC层。

公开(公告)号：US07374636B2

公开(公告)日：2008-05-20

申请号：US10205870

申请日：2002-07-26

申请人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu ,  Qi Li ,  Mahmoud Dahimene

发明人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu ,  Qi Li ,  Mahmoud Dahimene

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.

摘要翻译： 一种用于控制磁增强等离子体反应器内的磁场梯度的方法和装置。 该装置包括支撑外壳内的晶片的阴极基座，靠近外壳定位的多个电磁体，用于在外壳中产生磁场，并且磁场控制元件位于电磁体附近，用于控制靠近特定区域的磁场 的晶片。