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    Digital parallel electron beam lithography stamp
    4.
    发明授权
    Digital parallel electron beam lithography stamp 失效
    数字平行电子束光刻印

    公开(公告)号：US07425715B2

    公开(公告)日：2008-09-16

    申请号：US11418057

    申请日：2006-05-05

    申请人： Blaise Laurent Mouttet

    发明人： Blaise Laurent Mouttet

    IPC分类号： G21K5/00

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0635 ,  H01J2237/182 ,  H01J2237/2002 ,  H01J2237/30438 ,  H01J2237/31754 ,  H01J2237/31786

    摘要： An array of vertically aligned electron emitting nanotips such as multiwall carbon nanotubes are formed for use as a lithographic stamp. Crosswire addressing is used to generate electron emission from particular nanotips within the array. The nanotip array may be used to cure a resist, produce localized electrochemical reactions, establish localized electrostatic charge distributions, or perform other desirable coating or etching process steps so as to create nanoelectronic circuitry or to facilitate molecular or nanoscale processing.

    摘要翻译： 形成垂直排列的电子发射纳米尖端的阵列，例如多壁碳纳米管，用作光刻印模。 交叉线寻址用于从阵列内的特定纳米尖端产生电子发射。 纳米尖端阵列可用于固化抗蚀剂，产生局部电化学反应，建立局部静电电荷分布，或执行其它所需的涂覆或蚀刻工艺步骤，以便产生纳米电子电路或促进分子或纳米级处理。

    Digital parallel electron beam lithography stamp
    7.
    发明申请
    Digital parallel electron beam lithography stamp 失效
    数字平行电子束光刻印

    公开(公告)号：US20070257212A1

    公开(公告)日：2007-11-08

    申请号：US11418057

    申请日：2006-05-05

    申请人： Blaise Mouttet

    发明人： Blaise Mouttet

    IPC分类号： H01J37/302

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0635 ,  H01J2237/182 ,  H01J2237/2002 ,  H01J2237/30438 ,  H01J2237/31754 ,  H01J2237/31786

    摘要： An array of vertically aligned electron emitting nanotips such as multiwall carbon nanotubes are formed for use as a lithographic stamp. Crosswire addressing is used to generate electron emission from particular nanotips within the array. The nanotip array may be used to cure a resist, produce localized electrochemical reactions, establish localized electrostatic charge distributions, or perform other desirable coating or etching process steps so as to create nanoelectronic circuitry or to facilitate molecular or nanoscale processing.

    摘要翻译： 形成垂直排列的电子发射纳米尖端的阵列，例如多壁碳纳米管，用作光刻印模。 交叉线寻址用于从阵列内的特定纳米尖端产生电子发射。 纳米尖端阵列可用于固化抗蚀剂，产生局部电化学反应，建立局部静电电荷分布，或执行其它所需的涂覆或蚀刻工艺步骤，以便产生纳米电子电路或促进分子或纳米级处理。

    Electron beam duplication lithography method and apparatus
    8.
    发明申请
    Electron beam duplication lithography method and apparatus 失效
    电子束复制光刻方法及装置

    公开(公告)号：US20050121623A1

    公开(公告)日：2005-06-09

    申请号：US11040202

    申请日：2005-01-21

    申请人： Seiichi Iwamatsu

    发明人： Seiichi Iwamatsu

    IPC分类号： A61N5/00 ,  G21G5/00 ,  H01J37/30 ,  H01J37/317

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31779 ,  H01J2237/31786 ,  Y10S430/143

    摘要： An electron beam duplication lithography apparatus and method for focusing electrons emitted from a mask plate as a result of an application of an electric field between a mask plate and a duplication plate. Irradiation of electrons from the mask plate is assisted through an electric field lens or magnetic field lens, or a combination thereof from an electron field emission material formed into a pattern on a flat surface of a substrate. The result is that a congruent or similar pattern is lithographed by electron beam exposure onto an electron beam resist film from a field emission film having the congruent or similar pattern to be created.

    摘要翻译： 一种电子束复制光刻设备和方法，用于对由掩模板和复制板之间施加电场的结果聚焦从掩模板发射的电子。 通过电场透镜或磁场透镜或其组合形成在基板的平坦表面上的图案的电子场发射材料来辅助来自掩模板的电子的照射。 其结果是，通过电子束照射到具有一致或类似图案的场致发射膜的电子束抗蚀剂膜上，将所有等同或相似的图案进行平版印刷。

    Digital electron lithography with field emission array (FEA)
    9.
    发明授权
    Digital electron lithography with field emission array (FEA) 失效
    具有场发射阵列（FEA）的数字电子光刻技术

    公开(公告)号：US6014203A

    公开(公告)日：2000-01-11

    申请号：US13170

    申请日：1998-01-27

    申请人： Tihiro Ohkawa

    发明人： Tihiro Ohkawa

    IPC分类号： H01J37/317 ,  G03B27/74 ,  A61N5/00 ,  G01K1/08

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/31786

    摘要： A digital electron lithography system includes a plurality of cathodes oriented in a plane and positioned substantially parallel to a substrate surface in a vacuum chamber. The substrate surface is coated with a layer of an electron resist material and, in operation, individual cathodes in the array are selectively activated to emit electrons which alter the resist material. In order to create a predetermined pattern on the substrate, a focusing magnet is provided to direct the electrons from the respective cathodes to be focused on the substrate surface along substantially parallel electron paths. Additionally, a steering magnet is provided to change electron path directions so that electrons are steered to sequentially affect a plurality of pixels in a pixel matrix on the substrate surface. To minimize ion damage to the cathodes the electron paths are oriented at an angle to the perpendicular direction between the plane of the array and the substrate surface. Further, to compensate for defective cathodes, a preprogrammed sequence of cathode activation is accomplished whereby active cathodes affect the pixel matrices of adjacent defective cathodes.

    摘要翻译： 数字电子光刻系统包括在平面中定向并且基本平行于真空室中的衬底表面定位的多个阴极。 衬底表面涂覆有电子抗蚀剂材料层，并且在操作中，阵列中的各个阴极被选择性地激活以发射改变抗蚀剂材料的电子。 为了在衬底上产生预定图案，提供聚焦磁体以引导来自各阴极的电子沿基本平行的电子路径聚焦在衬底表面上。 此外，提供转向磁体以改变电子路径方向，使得电子被转向以依次影响衬底表面上的像素矩阵中的多个像素。 为了最小化对阴极的离子损伤，电子路径以与阵列的平面和衬底表面之间的垂直方向成一角度定向。 此外，为了补偿有缺陷的阴极，实现阴极激活的预编程序列，由此有源阴极影响相邻有缺陷阴极的像素矩阵。

    Method for manufacturing an electron beam emission aperture
    10.
    发明授权
    Method for manufacturing an electron beam emission aperture 失效
    电子束发射孔径的制造方法

    公开(公告)号：US4331505A

    公开(公告)日：1982-05-25

    申请号：US268948

    申请日：1981-06-01

    申请人： Alfred Hirt

    发明人： Alfred Hirt

    IPC分类号： H01J9/14 ,  G21K5/00 ,  H01J9/02 ,  H01J37/301 ,  H01J37/317 ,  B05D3/06

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/301 ,  H01J37/3174 ,  H01J2237/164 ,  H01J2237/31786

    摘要： A method of manufacturing an electron emission aperture of an electron beam generator using the associated electron beam generator and the cathode of the generator which emits electrons at a plurality of points, as well as aperture lenses, and employing electron projection lithography. The associated electron beams are used to burn the emission spot pattern of the associated cathode into an electron-sensitive layer of a blank of a perforated mask, through holes in the mask are produced by etching at the burn spots, individual aperture spots corresponding to the emission spot pattern are burned into an electron-sensitive layer of a blank of the aperture through the through holes using the perforated mask and the associated electron beams, and the blind holes near the spots are etched allowing their individual apertures and a supporting grid to remain.

    摘要翻译： 使用相关联的电子束发生器和在多个点处发射电子的发生器的阴极以及孔径透镜以及采用电子投影光刻制造电子束发生器的电子发射孔的方法。 相关联的电子束用于将相关阴极的发射光点图案燃烧成穿孔掩模的坯料的电子敏感层，通过在烧伤点处蚀刻产生掩模中的孔，通过对应于 使用穿孔掩模和相关联的电子束将发射点图案通过通孔燃烧成孔的空白的电子敏感层，并且蚀刻点附近的盲孔，允许其各自的孔和支撑网格保持 。