公开(公告)号：US06184158B2

公开(公告)日：2001-02-06

申请号：US08772374

申请日：1996-12-23

Applicant: Paul Kevin Shufflebotham ,  Brian McMillin ,  Alex Demos ,  Huong Nguyen ,  Butch Berney ,  Monique Ben-Dor

Inventor： Paul Kevin Shufflebotham ,  Brian McMillin ,  Alex Demos ,  Huong Nguyen ,  Butch Berney ,  Monique Ben-Dor

IPC: H01J3732

CPC classification number: H01J37/321 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/02315 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76837 ,  Y10S438/902 ,  Y10S438/906

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

公开(公告)号：US06761805B1

公开(公告)日：2004-07-13

申请号：US09236113

申请日：1999-01-25

Applicant: Xu Shi ,  Beng Kang Tay ,  Hong Siang Tan ,  David Ian Flynn

Inventor： Xu Shi ,  Beng Kang Tay ,  Hong Siang Tan ,  David Ian Flynn

IPC: H01J3732

CPC classification number: H01J37/32055 ,  C23C14/0605 ,  C23C14/325 ,  C23C14/3414 ,  H01J27/14 ,  H01J37/32614 ,  H01J37/3266

Abstract: A cathode arc source has means for generating first and second magnetic fields, of opposite or reverse direction to each other. The resultant magnetic field includes a null point between the target and the substrate, though close to the target. Field strength normal to the target is zero at the null point, and field strength lateral to the target is strong at the target surface, constraining movement of the arc spot and reducing the risk of migration off the target surface. A target is made by pressing graphite powder at elevated temperature and pressure in the absence of binding material. Both source and target contribute to reduced macroparticles in deposited films.

Abstract translation: 阴极电弧源具有用于产生彼此相反或相反方向的第一和第二磁场的装置。 所得到的磁场包括靶和衬底之间的零点，尽管靠近靶。 目标面的场强在零点为零，目标表面的场强横向强，约束电弧点运动，降低离开目标表面的风险。 通过在不存在粘合材料的情况下在升高的温度和压力下压制石墨粉而制成靶。 来源和目标都有助于沉积膜中减少的大颗粒。

公开(公告)号：US06597003B2

公开(公告)日：2003-07-22

申请号：US09905058

申请日：2001-07-12

Applicant: Alan C. Janos ,  Daniel B. Richardson

Inventor： Alan C. Janos ,  Daniel B. Richardson

IPC: H01J3732

CPC classification number: G03F7/70025 ,  G03F7/70575 ,  H01L21/67115 ,  H01L21/67126

Abstract: A radiation source constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode having a two dimensional surface bounding one side of a radiation emitting region. An ionizable, excimer gas is present in the radiation emitting region. The excimer gas, when energized, emits radiation in the UV and/or VUV wavelengths. A two dimensional dielectric radiation transmissive layer bounds an opposite side of the radiation emitting region and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer and a protective radiation transmissive window is a two dimensional matrix or screen electrode defining a plane generally parallel to the two dimensional surface of the base electrode region. A power supply coupled to the base and matrix electrodes to energize the electrodes and the eximer gas causing emission of UV and/or VUV radiation. The range of wavelengths transmitted to the wafer treatment region can be “tuned” by using a filter disposed adjacent to the protective window which functions to block transmission of selected wavelengths of emitted radiation.