公开(公告)号：US3778687A

公开(公告)日：1973-12-11

申请号：US3778687D

申请日：1971-04-20

申请人： CHANG J ,  VORA M

发明人： CHANG J ,  VORA M

IPC分类号： A47L15/42 ,  G01D5/244 ,  H01L21/00 ,  H01L21/22 ,  H01L21/265 ,  H01L27/00 ,  H01L29/36 ,  H01L29/73 ,  H01L9/12 ,  H01L3/12 ,  H01L11/08

CPC分类号： H01L29/36 ,  A47L15/42 ,  G01D5/244 ,  H01L21/00 ,  H01L21/22 ,  H01L21/265 ,  H01L27/00 ,  H01L29/73 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/085

摘要： A high performance PN silicon semiconductor device having an arsenic or antimony doped N region which gives a substantial improvement over similar phosphorous doped regions. Arsenic atoms in the N type emitter region of an NPN device tends to squeeze the P-type impurity, such as boron in the base into a narrow-base layer. For the same integrated base doping, a much narrower base can be obtained with arsenic-doped emitters than with phosphorous-doped emitters.

摘要翻译： 具有砷或锑掺杂N区的高性能PN硅半导体器件，其相对于类似的磷掺杂区域具有显着的改进。 NPN器件的N型发射极区域中的砷原子倾向于将基底中的诸如硼的P型杂质挤压成窄基底层。 对于相同的集成基极掺杂，砷掺杂发射体可以获得比使用磷掺杂发射极更窄的基极。

公开(公告)号：US3657616A

公开(公告)日：1972-04-18

申请号：US3657616D

申请日：1969-12-15

申请人： NIPPON TELEGRAPH & TELEPHONE

发明人： MIZUSHIMA YOSHIHIKO ,  SUDO TSUNETA

IPC分类号： H01L27/146 ,  H01L27/102 ,  H01L29/00 ,  H01L29/74 ,  H03K17/693 ,  H03K19/08 ,  H03K19/094 ,  H01L11/08

CPC分类号： H03K19/09403 ,  H01L27/1028 ,  H01L29/00 ,  H03K17/693 ,  H03K19/08

摘要： A semiconductor switching element which comprises at least one collector region diffused in a semiconductor substrate from its surface, the collector region containing a high concentration of impurities imparting thereto the same type of conductivity as the substrate and displaying a higher degree of conductivity than the substrate and being formed into a fully narrow area, a base region diffused at a space of approximately 50 microns max. from the collector region, as measured from the same surface of the substrate as that on which there is formed the collector region, such that the edge of the base region facing the collector region is sufficiently longer than that of the collector region, the base region containing a high concentration of impurities imparting thereto the same type of conductivity as the semiconductor substrate and displaying a higher degree of conductivity than the substrate, and at least one emitter region diffused from the same surface of the substrate as that through which the aforesaid two regions are diffused and having an opposite type of conductivity as the substrate.

摘要翻译： 一种半导体开关元件，其包括从其表面扩散到半导体衬底中的至少一个集电极区域，所述集电极区域含有高浓度的杂质，赋予与衬底相同的导电性并且显示比衬底更高的导电性， 形成为完全狭窄的区域，在最大约50微米的空间扩散的基极区域。 从与集电极区域相同的与基板相同的表面测定的集电极区域，使得面对集电极区域的基极区域的边缘比集电极区域的边缘充分长，基极区域 含有高浓度的杂质赋予其与半导体衬底相同类型的导电性并且显示出比衬底更高的导电性，以及至少一个发射极区域与衬底的与上述两个区域相同的表面扩散 被扩散并具有与衬底相反的导电性。

公开(公告)号：US3710206A

公开(公告)日：1973-01-09

申请号：US3710206D

申请日：1970-10-01

申请人： SONY CORP

发明人： MATSUSHITA T

IPC分类号： H01L29/74 ,  H01L29/00 ,  H01L29/73 ,  H01L11/08

CPC分类号： H01L29/00 ,  H01L29/73

摘要： An electrical circuit utilizing a semiconductor device to provide a novel negative impedance characteristic. The semiconductor device has, for example, four independent high impurity concentration regions formed on a semiconductor substrate, two of which regions inject carriers of opposite polarities into said substrate and another two of which regions are applied voltages so that junctions formed between said substrate and themselves are reversely biased to establish the desired negative impedance characteristics.

摘要翻译： 利用半导体器件提供新的负阻抗特性的电路。 半导体器件具有例如形成在半导体衬底上的四个独立的高杂质浓度区域，其中两个区域将相反极性的载流子注入到所述衬底中，并且另外两个区域被施加电压，使得在所述衬底与其自身之间形成的结 反向偏置以建立所需的负阻抗特性。

公开(公告)号：US08322218B2

公开(公告)日：2012-12-04

申请号：US12743753

申请日：2008-11-17

申请人： Takashi Kogai ,  Hiromi Yatsuda

发明人： Takashi Kogai ,  Hiromi Yatsuda

IPC分类号： G01N29/00 ,  H01L11/08 ,  H01L41/053

CPC分类号： G01N29/022 ,  G01N29/222 ,  G01N2291/0423 ,  H03H9/1092

摘要： A surface acoustic wave device having electrodes disposed on a piezoelectric substrate, comprising a sealing member having a peripheral wall disposed on the piezoelectric substrate in surrounding relation to the electrodes, and a top plate covering the peripheral wall; and a sealing stiffener disposed on the piezoelectric substrate in facing relation to a liquid material imposed on the piezoelectric substrate and which extends parallel to a portion of the peripheral wall.

摘要翻译： 一种表面声波装置，具有设置在压电基板上的电极，包括密封构件，所述密封构件具有围绕所述电极设置在所述压电基板上的周壁，以及覆盖所述周壁的顶板; 以及密封加强件，其设置在压电基板上，与施加在压电基板上的液体材料相对，并且平行于周壁的一部分延伸。

公开(公告)号：US3736478A

公开(公告)日：1973-05-29

申请号：US3736478D

申请日：1971-09-01

申请人： RCA CORP

发明人： VELORIC H

IPC分类号： H01L29/417 ,  H01L21/331 ,  H01L29/00 ,  H01L29/73 ,  H01L5/02 ,  H01L11/08

CPC分类号： H01L29/00 ,  H01L29/73 ,  Y10S148/085 ,  Y10S148/145

摘要： An RF transistor has base and collector regions and a plurality of discrete emitter segments extending into the base region. A highly conductive intermetallic, such as PtSi grid extends into the base region and individually surrounds each emitter segment. The highly conductive intermetallic, such as PtSi grid is separated from the collector region by a highly resistive grid of the same conductivity type as the base region.

摘要翻译： RF晶体管具有基极和集电极区域以及延伸到基极区域中的多个离散发射极区域。 高度导电的金属间化合物，例如PtSi栅极延伸到基极区域中并且分别围绕每个发射极区段。 通过与基极区相同的导电类型的高电阻栅格将诸如PtSi栅极的高度导电的金属间化合物从集电极区域分离。

公开(公告)号：US3566206A

公开(公告)日：1971-02-23

申请号：US3566206D

申请日：1968-12-20

申请人： BELL TELEPHONE LABOR INC

发明人： BARTELINK DIRK J ,  SCHARFETTER DONALD L

IPC分类号： H01L29/00 ,  H01L29/06 ,  H01L29/86 ,  H01L9/10 ,  H01L9/12 ,  H01L11/08 ,  H01L11/10 ,  H01L13/00

CPC分类号： H01L29/06 ,  H01L29/00 ,  H01L29/86

摘要： A P+INIPIN+ diode is operated as an avalanche diode to provide highly efficient negative resistance. Also, by connecting voltage sources to the intermediate N- and P-Zones, the devices may be used as an electronic switch.