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公开(公告)号:US20230178571A1
公开(公告)日:2023-06-08
申请号:US17543302
申请日:2021-12-06
申请人: ams Sensors USA Inc.
发明人: Kevin TETZ , Scott JOHNSON
IPC分类号: H01L27/146
CPC分类号: H01L27/14614 , H01L27/14649 , H01L27/1462
摘要: A pixel arrangement (10) is provided. The pixel arrangement (10) comprises a photosensitive stage (20) being configured to generate electrical signals by converting electromagnetic radiation, wherein the photosensitive stage (20) forms at least one sub-pixel of a first type (40) comprising a photodiode (41) that is configured generate a low sensitivity signal, and at least one sub-pixel of a second type (50) comprising a photodiode (51) that is configured to generate a high sensitivity signal. The pixel arrangement (10) further comprises a sample-and-hold stage (30), wherein the sample-and-hold (30) stage is electrically coupled to the photosensitive stage (20) via a diffusion node (60) and configured to sample and store the electrical signals from the photosensitive stage (20).
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公开(公告)号:US20240357254A1
公开(公告)日:2024-10-24
申请号:US18681753
申请日:2022-08-10
发明人: Adi Xhakoni , Scott Johnson , Denver Lloyd
IPC分类号: H04N25/77
CPC分类号: H04N25/77
摘要: In an embodiment a pixel arrangement includes a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first capacitor and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, a supply terminal, a reset transistor coupled to the supply terminal, a coupling transistor coupled to the circuit node and to the reset transistor and a third capacitor with a first electrode coupled to a node between the reset transistor and the coupling transistor.
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公开(公告)号:US20240006436A1
公开(公告)日:2024-01-04
申请号:US17852676
申请日:2022-06-29
申请人: ams Sensors USA Inc.
IPC分类号: H01L27/146
CPC分类号: H01L27/14621 , H01L27/1469 , H01L27/14634 , H01L27/14643
摘要: An image sensor, comprises a three-dimensional integrated circuit comprising a stack with at least a top-, a middle-, and a bottom-tier. The bottom-tier (BTR) comprises a first array of photodetectors, denoted first pixels (PD1), and the first pixels being sensitive in the visual and/or near-infrared spectral range. The middle-tier (MTR) comprises a second array of photodetectors, denoted second pixels (PD2), and the second pixels being sensitive in the short-wave infrared spectral range. The top-tier (TTR) comprises an application-specific integrated circuit, denoted ASIC, operable to read out the arrays of the first and second photodiodes (PD1, PD2).
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公开(公告)号:US11696048B1
公开(公告)日:2023-07-04
申请号:US17709518
申请日:2022-03-31
申请人: ams Sensors USA Inc.
IPC分类号: H04N25/77 , H04N25/57 , H04N25/71 , H04N25/771 , H04N25/778 , H04N25/67
CPC分类号: H04N25/57 , H04N25/745 , H04N25/771 , H04N25/778 , H04N25/67
摘要: A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.
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公开(公告)号:US20240340547A1
公开(公告)日:2024-10-10
申请号:US18681721
申请日:2022-08-10
发明人: Denver Lloyd , Scott Johnson , Adi Xhakoni
IPC分类号: H04N25/59 , H04N25/53 , H04N25/616 , H04N25/703
CPC分类号: H04N25/59 , H04N25/53 , H04N25/616 , H04N25/703
摘要: In an embodiment a method for operating a pixel arrangement includes, during an exposure period, accumulating, by a photodetector, in a first integration period, charge carriers, pulsing, at an end of the first integration period, a transfer transistor to a first voltage level for transferring a portion of the accumulated charge carriers to a diffusion node, wherein the portion is configured to be drained to a supply voltage, continuing, by the photodetector, to accumulate, in a second integration period, charge carriers, after the second integration period, pulsing the transfer transistor to a respective further voltage level with at least one additional pulse, wherein, with each additional pulse, an additional portion of the accumulated charge carriers is configured to be drained to the supply voltage, and wherein each additional pulse is followed by an additional continued accumulation of charge carriers in a respective additional integration period with the photodetector.
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公开(公告)号:US11765474B2
公开(公告)日:2023-09-19
申请号:US17818938
申请日:2022-08-10
发明人: Denver Lloyd , Adi Xhakoni , Scott Johnson
IPC分类号: H04N25/59 , H04N25/778 , H04N25/75 , H04N25/531 , H04N25/585 , H04N25/62 , H04N25/583 , H01L27/146
CPC分类号: H04N25/59 , H01L27/14612 , H01L27/14643 , H04N25/531 , H04N25/583 , H04N25/585 , H04N25/62 , H04N25/75 , H04N25/778
摘要: In an embodiment a pixel arrangement includes at least one photodiode configured to convert electromagnetic radiation into a respective charge signal, a transfer gate between the photodiode and a capacitance for transferring the respective charge signal to the capacitance, a reset gate electrically coupled to the capacitance, the reset gate configured to reset the capacitance, an amplifier electrically connected to the capacitance and configured to generate, based on the respective charge signal and on a sensitivity mode, a respective amplified signal being a low sensitivity signal or a high sensitivity signal, respectively, wherein the low sensitivity signal and the high sensitivity signal are based on a common noise level, a first capacitor configured to store the high sensitivity signal, a second capacitor configured to store the low sensitivity signal, a first switch between an output terminal of the amplifier and the first capacitor and a second switch between the output terminal of the amplifier and the second capacitor.
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公开(公告)号:US11647310B1
公开(公告)日:2023-05-09
申请号:US17711088
申请日:2022-04-01
申请人: ams Sensors USA Inc.
发明人: Kevin Fronczak , David Sackett , Adi Xhakoni
IPC分类号: H04N25/77 , H04N25/75 , H04N25/616 , H04N25/772
CPC分类号: H04N25/75 , H04N25/616 , H04N25/772
摘要: An image sensor includes a pixel array including a plurality of pixels each including a photosensitive element, and a readout circuit, wherein the pixels are arranged in at least two columns, within each column at least some of the pixels of the column are connected with a common column bus, respectively, for each column the readout circuit includes a first analog-to-digital converter (ADC) and a second ADC, for each column the first ADC is connected with the column bus, and for each column the second ADC is connectable with at least one of the column bus and a reference potential or the second ADC is connected with one optically shielded pixel of the pixel array.
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公开(公告)号:US20230051657A1
公开(公告)日:2023-02-16
申请号:US17818962
申请日:2022-08-10
发明人: Denver Lloyd , Adi Xhakoni , Scott Johnson
IPC分类号: H04N5/355 , H01L27/146 , H04N5/3745 , H04N5/378
摘要: In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.
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公开(公告)号:US20230049844A1
公开(公告)日:2023-02-16
申请号:US17818938
申请日:2022-08-10
发明人: Denver Lloyd , Adi Xhakoni , Scott Johnson
摘要: In an embodiment a pixel arrangement includes at least one photodiode configured to convert electromagnetic radiation into a respective charge signal, a transfer gate between the photodiode and a capacitance for transferring the respective charge signal to the capacitance, a reset gate electrically coupled to the capacitance, the reset gate configured to reset the capacitance, an amplifier electrically connected to the capacitance and configured to generate, based on the respective charge signal and on a sensitivity mode, a respective amplified signal being a low sensitivity signal or a high sensitivity signal, respectively, wherein the low sensitivity signal and the high sensitivity signal are based on a common noise level, a first capacitor configured to store the high sensitivity signal, a second capacitor configured to store the low sensitivity signal, a first switch between an output terminal of the amplifier and the first capacitor and a second switch between the output terminal of the amplifier and the second capacitor.
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公开(公告)号:US20240029644A1
公开(公告)日:2024-01-25
申请号:US17871595
申请日:2022-07-22
申请人: ams Sensors USA Inc.
发明人: Sue HUI , Matthew SAMPSELL
IPC分类号: G09G3/3208
CPC分类号: G09G3/3208 , G09G2360/144
摘要: Optical sensor module (54) for detection of ambient light behind an OLED display (2), comprising a first optical sensor (56) and a second optical sensor (58), whereby the first optical sensor (56) is preceded by a polarizer (70).
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