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公开(公告)号：US11634670B2
公开(公告)日：2023-04-25
申请号：US17293321
申请日：2019-10-30
申请人： TOAGOSEI CO., LTD.
发明人： Ryosuke Yamauchi , Akihiro Gotou
IPC分类号： C11D7/34 , C11D11/00 , H01L21/02 , H01L21/306 , C11D3/34
摘要： A semiconductor cleaning agent containing a sulfonic acid group-containing polymer, wherein a content of at least one metal selected from the group consisting of Na, Al, K, Ca and Fe is 0.7 ppm or less.
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公开(公告)号：US11566210B2
公开(公告)日：2023-01-31
申请号：US17293321
申请日：2019-10-30
申请人： TOAGOSEI CO., LTD.
发明人： Ryosuke Yamauchi , Akihiro Gotou
IPC分类号： C11D7/34 , C11D11/00 , H01L21/02 , H01L21/306 , C11D3/34
摘要： A semiconductor cleaning agent containing a sulfonic acid group-containing polymer, wherein a content of at least one metal selected from the group consisting of Na, Al, K, Ca and Fe is 0.7 ppm or less.
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公开(公告)号：US20220306971A1
公开(公告)日：2022-09-29
申请号：US17831033
申请日：2022-06-02
摘要： This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.
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公开(公告)号：US11092895B2
公开(公告)日：2021-08-17
申请号：US16487905
申请日：2019-04-16
申请人： LTC CO., LTD.
发明人： Hosung Choi , Kyusang Kim , Jongil Bae , Jongsoon Lee , Sangku Ha , Yunmo Yang
摘要： The present invention relates to a peeling solution composition for dry film resist, which is usable for manufacturing a PCB for forming a microcircuit, and particularly is applicable for a process of manufacturing a flexible multi-layer PCB.
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公开(公告)号：US20210130751A1
公开(公告)日：2021-05-06
申请号：US16492338
申请日：2018-01-23
申请人： FUJIMI INCORPORATED
摘要： The present invention provides a means by which it is possible to sufficiently suppress an organic residue while favorably decreasing a ceria residue on a polished object to be polished obtained after being polished using a polishing composition containing ceria.
The present invention relates to a composition for surface treatment, which is for a surface treatment of a polished object to be polished obtained after being polished using a polishing composition containing ceria, contains a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group, a SOx or NOy partial structure-containing compound having a partial structure represented by SOx or NOy (where x and y each independently denote a real number 1 to 5), and a dispersing medium, and has a pH of 1 or more and 8 or less.-
公开(公告)号：US10916435B2
公开(公告)日：2021-02-09
申请号：US16084196
申请日：2017-03-06
申请人： FUJIMI INCORPORATED
发明人： Yasuto Ishida
摘要： The present invention provides a means for sufficiently removing organic residues remaining on the surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. The present invention relates to a surface treatment composition including a polymer compound having a sulfonic acid (salt) group and water, wherein the surface treatment composition has a pH value of less than 7 and the surface treatment composition is used for decreasing an organic residue on a surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished.
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公开(公告)号：US10781410B2
公开(公告)日：2020-09-22
申请号：US16127536
申请日：2018-09-11
申请人： FUJIMI INCORPORATED
发明人： Yasuto Ishida , Tsutomu Yoshino , Shogo Onishi
摘要： The composition for surface treatment according to the present invention includes a carboxylic acid compound having two or more nitrogen atoms, an ionic dispersing agent, and water, has a pH of less than 6, and is used for treating a surface of a polished object having a tungsten-containing layer.
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公开(公告)号：US20200294808A1
公开(公告)日：2020-09-17
申请号：US16084196
申请日：2017-03-06
申请人： Fujimi Incorporated
发明人： Yasuto Ishida
摘要： The present invention provides a means for sufficiently removing organic residues remaining on the surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. The present invention relates to a surface treatment composition including a polymer compound having a sulfonic acid (salt) group and water, wherein the surface treatment composition has a pH value of less than 7 and the surface treatment composition is used for decreasing an organic residue on a surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished.
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公开(公告)号：US20200272056A1
公开(公告)日：2020-08-27
申请号：US16487905
申请日：2019-04-16
申请人： LTC CO., LTD.
发明人： HOSUNG CHOI , KYUSANG KIM , JONGIL BAE , JONGSOON LEE , SANGKU HA , YUNMO YANG
摘要： The present invention relates to a peeling solution composition for dry film resist, which is usable for manufacturing a PCB for forming a microcircuit, and particularly is applicable for a process of manufacturing a flexible multi-layer PCB.
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公开(公告)号：US10717885B2
公开(公告)日：2020-07-21
申请号：US16323973
申请日：2017-08-24
发明人： Gregory Morose
摘要： A composition includes methyl acetate, dimethyl carbonate, acetone, or a combination thereof, dimethyl sulfoxide, methyl glyoxal, propylene carbonate, gamma butyrolactone, ethylene carbonate, 2-chloro-1-propanol, or a combination thereof, and optionally thiophene, 1,3-dioxolane, thioacetic acid, or a combination thereof. The respective amounts of each solvent are further described herein, and the total amounts of methyl acetate, dimethyl carbonate, acetone, dimethyl sulfoxide, methyl glyoxal, propylene carbonate, thiophene, 1,3-dioxolane, and thioacetic acid sum to at least 90 volume percent of the total volume of the composition. The composition can be particularly useful for removal of a coating from a surface. Accordingly, a method of removing a coating from a surface is also disclosed.
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